barrier device 中文意思是什麼

barrier device 解釋
隔離器件
  • barrier : n. 1. 柵，柵欄，隔欄，障壁，隔板，擋板；賽馬的出發柵。2. 關口，（海關）關卡。3. 障礙；壁壘；界線。4. （擴伸到海洋中的）南極洲冰層。vt. 用柵圍住。
  • device : n. 1. 設計，計劃；方法，手段。2. 〈pl. 〉意志，慾望。3. 謀略，策略，詭計。4. 器具，器械，設備，裝置。5. 圖案，圖樣；花樣；紋章；標記，商標；（紋章上的）題銘。
  1. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  2. Gas permeability tester and mechanical folding device were developed to study the barrier property and deformation failure behaviors. the surface characterization, chemical structure, optical, mechanical properties of pet coated with dlc have been investigated by x - ray photoelectron spectroscopy ( xps ), contact angle measurement, light transmission analysis, nanoindentation and friction wear tests

    通過x射線光電子譜分析、接觸角測定、光學透過率分析、納米壓痕、摩擦磨損試驗、機械彎折試驗、氣體透過率試驗，對膜層的表面特徵，光學、力學及氣體阻隔性能進行了系統的研究。
  3. Ftir, thermal conductivity device and smart digital rounding temperature testing device are used to test the infrared absorption spectrum, thermal conductivity and temperature changes of the title coatings, it is concluded that when hudrotalcite and magnesium sulfate is mixed by 4 to 10, the heat insulation property is the best, and the temperature changes of nizi increased by 5 approximately compared with those without hydrotalcite and magnesium sulfate compound system, but the heat conduction coefficient is hardly increased because of the different mechanism of heat insulation of the fillers, which further prove that heat insulation with fillers is based on infrared barrier

    本文使用傅里葉變換紅外光譜儀、導熱系數儀和智能數字式巡迴檢測溫度測試儀分別測試了添加具有紅外阻隔能力填料的內墻塗料的紅外吸收光譜、導熱系數和溫度變化情況，通過測試結果得出結論：水滑石和硫酸鎂在質量比為4 : 10的時候，紅外阻隔性能最優，其溫差變化較沒有添加水滑石硫酸鎂復合體系時提高5左右，而對內墻塗料的導熱系數幾乎沒有影響，這是由於填料對塗料的保溫機理不同所致，同時也進一步驗證了填料是通過紅外阻隔來達到保溫效果的。
  4. Current flows through the device by the process of quantum tunneling : a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator

    電子在元件中利用量子穿隧效應流動，少量的電子可穿過絕緣層的障礙到達另一邊。
  5. Thus, it is believed that in subsequent high - temperature process, the base boron will outdiffuse very easily into emitter and collector, which will form a parasitic barrier for the electrons when moving from emitter into base and result in performance degradation of the device

    這樣在後續的高溫工藝中就會引起基區的雜質外擴到集電區和發射區，產生電子勢壘，導致器件性能的嚴重退化。
  6. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
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