base collector 中文意思是什麼

base collector 解釋
基極集電極
  • base : n 1 基底,基,根基,底座;底層,底子;(紀念碑等的)基址;(山)麓。2 【軍事】基地,根據地。3 根...
  • collector : n 1 收集家;採集者;收集器。2 收稅員;收款員;募捐人;〈美國〉(海關的)徵收員;收票員。3 【電學...
  1. The base region is always very much narrower than the emitter or collector regions.

    基極總是比發射極和集電極薄得多。
  2. The density of holes in the base is less than the density of free electrons in the emitter and collector.

    基極中空穴的密度小於發射極和集電極中自由電子的密度。
  3. Does the collector current rise in equal steps for equal increments of base current ?

    基極電流作等值增長時,集電極電流是否也相應地等值上升呢?
  4. First, passive resistance network was selected as direct current biasing network, which offered direct voltage for base through the resistance voltage divider composed of two resistances, among them the upper resistance connected from the dc to base, the lower resistance connected from the base to ground. the collector connected with dc directly

    直流偏置網路採用無源電阻網路,通過由兩個電阻組成的電阻分壓器為基極提供直流電壓,上偏電阻從電源串聯到基極,下偏電阻從基極到地,集電極直接加電。
  5. Common - base collector emitter connection

    共基極集電極發射極連接
  6. An integrated process of wastewater treatment and utilization is presented. the process is made up of heating the soft water of room temperature by high temperature printing and dyeing wastewater via heat exchangers, reusing the low level base decrement wastewater of water washing for dust control and desulphurizing of stack gas and anaeration - aeration biological treatment of printing and dyeing wastewater. this process has fair economical benefit on the principle of so called waste control by waste itself. this might be an ideal process for printing and dyeing wastewater treatment and disposal, the effluent of this process is quite enough to meet the requirement of urban sewer collector. additionally also many advantages are attractive such as the complete return of biological sludge to digestion, no chemicals dosage and free of secondary pollution

    介紹了高溫印染廢水通過熱交換加熱常溫軟水、低濃度堿減量水洗廢水用於煙道氣除塵脫硫、厭氧-好氧處理一般印染廢水等印染廢水綜合處理技術,該技術具有較好的經濟效益,達到了以廢治廢的目的,生物污泥全部迴流硝化,不加任何藥劑,無二次污染,處理后水質達到城市截污管網標準要求,是一種較為理想的印染廢水處理工藝。
  7. 1 、 through the theoretical analysis and the medici simulation, according to the design directive, the structural parameters are designed comprehensively, including the dopant concentration and the depth of the emitter, the base dopant concentration and the depth ( especially the ge ratio ), the dopant concentration and the depth of the collector

    主要工作是: 1 、通過理論分析和medici模擬,綜合設計得出符合設計指標的結構參數,主要包括:發射區的摻雜濃度和厚度?基區的摻雜濃度和厚度及基區中ge的組分比?集電區的摻雜濃度和厚度。
  8. And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown

    而計算分析和二維數值模擬分析結果表明:梳狀集電結(基區)結構在不增加器件本徵集電結面積的條件下,增大了器件的本徵散熱面積和基區周長,改進了每個子器件單元內的散熱方式,提高了單元內結溫和電流分佈的均勻性,降低了器件的熱阻,增大了器件的耗散功率和輸出功率,較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾,並有利於改善器件抗二次擊穿的性能。
  9. The static loading test for three group of testing piles of jiading power plant secend stage project are analyzed and studied in this thesis, and the practical applying of high - accurate data collector, technique of waterproof insulation and testing technique of burying in the body of pile are introduced also. the vertical and horizontal loading features of three group of piles of different kind and constructing technique in different earth layer at the pile point are analyzed and compared and summed up with basic integro - differential equation calculating the pile earth system load transmit, transforming principle of stress - deforming and pile body rating of burying electric measuring element. changing law of stress, and changing law of pile body shifting and bending for different testing piles under vertical and horizontal load are showed so that the loading features of soil layer and pile at testing spot, reliable design data for pile type and base for scientific construction technique are provided

    本文僅就嘉定電廠二期工程中的三根試驗樁的靜載試驗進行了分析和研究,利用樁土體系荷載傳遞分析計算的基本微分方程及應力-應變轉換原理,結合預埋電測元件的樁身率定,對三組不同種類、不同施工工藝、不同持力層中的樁的豎直、水平承載特性進行了分析、比較和歸納,通過大量、全面的實測數據,經過整理、轉換和推演,揭示了不同試驗樁在豎直、水平荷載作用下的應力變化規律和樁身變位、撓曲變化規律,最終提供試驗場地土層和樁的承載特性,為該工程合理設計樁型提供了可靠的設計參數,為確定科學的施工工藝提供了有力的依據。
  10. In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current. a new interpretation to this phenomenon was given. this

    在實驗中我們還觀察到,在高vce和大電流下,重摻雜基區gesihbt出現負阻現象,我們對這一現象進行了新的解釋,認為這是由熱電負反饋導致的。
  11. Thus, it is believed that in subsequent high - temperature process, the base boron will outdiffuse very easily into emitter and collector, which will form a parasitic barrier for the electrons when moving from emitter into base and result in performance degradation of the device

    這樣在後續的高溫工藝中就會引起基區的雜質外擴到集電區和發射區,產生電子勢壘,導致器件性能的嚴重退化。
  12. Not only the top surfaces of emitter, base and collector but also the sidewalls of emitter and base are completely passivated by the proposed full sulfur treatment

    最後,在本文中,將提供一個全面性表面硫化披覆方式之異質接面雙極性電晶體。
  13. The main works are as the follows. in view of the contradiction among frequency, output power and dissipation power, propose deep - trench junction termination structure filling with isolated materials and collector - combed ( base - combed ) structure

    主要工作包括以下幾個方面:針對頻率與功率、功耗的矛盾,提出了絕緣深阱結終端結構和梳狀集電結(基區)結構。
  14. In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices. one is a typical of oc stress method with collector open and reverse - bias emitter - base junction. another one, a new technique, is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction

    本論文採用兩種反偏電應力方法考察器件的可靠性,一種為傳統的oc應力(集電極開路,發射結反向偏置)方法,另一種為新的方法fc應力(集電結正向偏置,發射結反向偏置)方法。
  15. At low frequencies, the current in the collector of a transistor is in phase with the applied current at the base

    在低頻段,晶體管的集電極電流與施加在基級的電流同相。
  16. We ' ve seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the ratio

    我們已經看到有源晶體管的恆定的基極電流是如何以系數控制集電極電流的。
  17. In the diagram, the output of the error amp is connected to the base of an npn transistor : when the error amp drives current into this transistor ' s base, it allows current to flow from collector to emitter, and that transistor in turn pulls current from the base of the pass transistor

    在這個圖里,誤差放大器的輸出端連接到了一個npn三極體的基極上:當誤差放大器輸出電流到了三極體的基極上,三極體允許電流從集電極向發射極流動,這個傳輸三極體工作時就是就是從基極吸取電流的過程。
  18. We ’ ve designed the integral structures of the system. the structure of the system is partitioned into four parts : self - feeding unit, automatic measurement unit, automatic fraction collector and software. base on the requirement of the measurement, we also designed the way to achieve the purpose and introduce the principles of each part

    本文首先設計了插針測量分選系統的總體結構,根據測量要求和實際情況將系統分為自動上料裝置、測量裝置、分選裝置和測量軟體等四部分,對各部分的原理進行了介紹,並詳細論述了具體實現的方法和難點。
  19. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中,採用了smart功率集成技術實現電路的大功率,基區是外延層的縱向pnp晶體管作為輸出,將集電極置於晶元背面,採用低電阻率p ~ +襯底作為歐姆接觸。
  20. In bjt devices, a small current flow at the base moderates a much larger current between the emitter and collector

    在bjt器件中,基極小的電流調節發射極和接收極之間大得多的電流。
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