base of transistor 中文意思是什麼

base of transistor 解釋
晶體管座
  • base : n 1 基底,基,根基,底座;底層,底子;(紀念碑等的)基址;(山)麓。2 【軍事】基地,根據地。3 根...
  • of : OF =Old French 古法語。
  • transistor : n. 【無線電】晶體(三極)管;晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Test results show that under 2 - tone test in 5mhz tone spacing, the power amplifier system achieves - 50dbc imd3 with 20w output power, improved 20db in imd3 compared with the one without linearity. estimated value of aclr comes to 53db, which satisfies the 3gpp requirement for wcdma base - station transistor. further tests with alterative input power indicate a steady suppression to the imd3 controlled by the adaptive system

    測試結果表明,自適應前饋功放系統在雙音輸出功率20w時三階交調系數小於- 50dbc ,鄰通道泄漏抑制比( aclr )的估算結果大於53db ,在理論上滿足3gpp對wcdma基站發射機的指標要求。
  2. With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology

    隨著摻雜工藝的不斷發展,高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。
  3. At low frequencies, the current in the collector of a transistor is in phase with the applied current at the base

    在低頻段,晶體管的集電極電流與施加在基級的電流同相。
  4. We ' ve seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the ratio

    我們已經看到有源晶體管的恆定的基極電流是如何以系數控制集電極電流的。
  5. In the diagram, the output of the error amp is connected to the base of an npn transistor : when the error amp drives current into this transistor ' s base, it allows current to flow from collector to emitter, and that transistor in turn pulls current from the base of the pass transistor

    在這個圖里,誤差放大器的輸出端連接到了一個npn三極體的基極上:當誤差放大器輸出電流到了三極體的基極上,三極體允許電流從集電極向發射極流動,這個傳輸三極體工作時就是就是從基極吸取電流的過程。
  6. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中,採用了smart功率集成技術實現電路的大功率,基區是外延層的縱向pnp晶體管作為輸出,將集電極置於晶元背面,採用低電阻率p ~ +襯底作為歐姆接觸。
  7. First, on the base of theory analysis and computer simulation, this paper uses interleaved two - transistor forward circuit to realize the main circuit of boost dc - dc converter, and also presents the structure, the principle and the design. the method is proved to be effective by simulation

    首先,在理論分析和計算機模擬的基礎上,本文選擇交錯並聯雙管正激變換拓撲作為升壓型直直變換器的主電路,對它進行了電路原理分析和具體的設計,模擬結果驗證了該設計方法的可行性與有效性。
  8. Thus, the sige technology is very promising. the research in this thesis focuses on the design of sige devices. the main job includes the design of transistor structure and the optimal design of the base buffer

    本論文的研究課題是sigehbt器件的設計,主要工作包括兩個方面:一,晶體管的結構設計;二,基區緩沖層的設計。
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