beam voltage 中文意思是什麼

beam voltage 解釋
電子束電壓
  • beam : n 1 梁,棟梁,桁條;(船的)橫梁。2 船幅;(動物、人的)體幅。3 (秤)桿,杠桿,(織機的)卷軸,...
  • voltage : n. 【電學】電壓,電壓量,伏特數。 the working voltage (電氣的)耐壓限度。
  1. Lc apparatus almost meet all the needs of space optical communication such as weight, size, power consume, life, cost, driving voltage, intergration of optics and electricity, programe, optically take ? over aperture, beam scanning, deflexional range and so on. switches, deflexional facilities and scanning equipments which made with lc have been used in the system of labor in space communication. the only bug of lc apparatus is that their answer speed only get microsecond rate or submicrosecond rate. but it is practical for them to be used in special beam capture, scan, deflexion controling which don ’ t concerned with code rate and code type

    液晶器件幾乎滿足空間光通信的所有大的指標要求如重量、尺寸、功耗、壽命、成本、驅動電壓、光電集成、可編程性、光學接收孔徑、光束掃描和偏轉范圍等等。液晶光開關、光偏轉器、光掃描器已經開始應用於光纖通信的實驗系統中。液晶類器件應用於光通信的唯一重大缺陷,是其響應速度目前只能達到微秒級或亞微秒級,不過,在不涉及到碼型碼率的空間光束捕獲、掃描、偏轉、控制方面,液晶器件完全可能進入實用化。
  2. Using the particle - in - cell ( pic ) model, a 8 millimeter relativistic backward wave oscillator underlying superradiance mechanism was gotten, the influence on both operation frequency and radiation efficiency of the guiding magnetic field, the diode voltage, the beam current and the beam radius as well as the corrugation structure were also presented

    採用pic方法,通過數值模擬優化設計了超輻射狀態下的8毫米相對論返波振蕩器,分析了引導磁場、二極體電壓、電子束流、電子束半徑、周期慢波結構等對器件的輻射功率及輻射效率的影響。
  3. The system is different from traditional silicon controlled dephasing method, such speedy modules as whole controlled electric and electronic equipment igbt and high frequency pwm controlling methods are employed, and the voltage of exchanging power supply of motor of beam pumping units can be controlled automatically, so there is no problem of power factor being decreased brought by silicon controlled phase single controlled, power factor in power net of beam pumping units " motor is enhanced really

    由於雙管齊下,電機電網側的功率因數得到了大大提高。與傳統的可控硅移相控制方式不同,本系統採用全控型電力電子器件igbt等快速模塊及高頻pwm控制方式,對抽油機電機的交流供電電壓進行自動控制,不存在可控硅相控角所帶來的功率因數變差的問題,真正提高了抽油機電網側的功率因數。
  4. Critical voltage of thin beam drived by electrostatic force

    靜電力作用下的微梁失穩臨界電壓分析
  5. The method of using the tip of atomic force microscopy and beam - deflection to on - line detect the nanometer vibration of the particle in the saw is introduced, and the saw amplitude of 6. 7 nm is measured when a driving voltage of 3. 5 v is applied

    並用這種方法在激振電壓峰峰值為3 . 5v時,對壓電材料linbo _ 3表面彈性波進行了實時測量,得到表面彈性波振幅約為6 . 7nm 。
  6. And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail

    並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究,分析了漂移區長度、電壓、電流、速度lhq值、磁場k , ; 、注入波功率等多種因素對互作用電子效率及增益的影響。
  7. Negative mode velocity feedback was adopted and the control voltage applied to each piezoelectric element acting as actuator was calculated to control the vibration of the beam

    採用模態速度負反饋進行回饋控制,以此計算出各個作為致動器的壓電片的控制電壓,以抑制懸臂梁的振動。
  8. Simulation results show that the vibration of the beam can be suppressed rapidly by applying voltage to the piezoelectric patches displaced in this way, and single mode vibration and multi - mode vibration can be controlled simultaneously

    通過算例進行數值模擬,結果表明,以此方法布置壓電片和輸人控制電壓,能迅速抑制懸臂梁的振動,可單獨或同時控制幾階模態振動。
  9. Now we are busy fitting and testing the asipp single - ion microbeam facility. the main work in this paper are as following : testing the performances of bend magnets and magnetic quadruple, simulating the course of beam - line transport, realizing the function of count of the number of radiated ions & control of the electronic beam shutter, calculating different voltage worked on the beam shutter of different beam - line, probing into some factors that may influence the controlling precision and providing some method to solve them

    本課題所做的工作主要是對偏轉磁鐵、磁四極場進行性能測試和對束線的傳輸進行模擬計算;編程實現離子記數和束開關的控制;計算出使用不同束線時束開關上所應該加上的電壓值,並且對可能影響控制精度的因素進行了一些探討,並提出相應的解決方案。
  10. Finally, the influence the radius of the electron beam, current of the electron beam, the acceleration voltage and the geometrical dimension of the slow - wave structure on small signal gain are discussed

    研究表明:對應最大的增益,有一飽和電壓存在;小信號增益隨電子注電流的增大而增大;也隨電子注半徑的增加而增大。
  11. Because, in our experiment, the beam current and the diode voltage are not their optimized values by the results of the particle simulation, the measured output microwave power is only 230mw

    由於實驗中束流電壓和電流都偏小,輸入的電子束功率水平低,特別束流大小比在粒子模擬中得到的優化電流低得較多,所以實驗測試到的微波功率只有230mw 。
  12. Welding - acceptance inspection of electron beam welding machines - measurement of accelerating voltage characteristics

    焊接.電子束焊接機的驗收檢驗.加速電壓特性測量
  13. Chapter three : presents the fabrication process of micro - switch with cantilever beam and designed the masks. chapter four : designed circuit to actuate the micro - switch, analyzed the dynamic and static property of voltage doublers circuit

    第四章設計出了微開關驅動電壓的升壓電路,對倍壓整流電路的輸入特性和負載特性進行了分析,設計了實際電路圖。
  14. Our mainly product is varieties of lighting resources, includinghigh voltage and low voltage halogen lamp, cool beam reflector lamp, alr lamp and other special specification lamp to meet your requirement

    公司主要的產品有:高低壓鹵素燈系列、冷光杯系列,豆膽燈系列及其它特種規格的電光源產品。
  15. Simulation results show 2. 5 gw output power with a frequency of 1. 25ghz can be generated with an input of 620kv voltage, dc input power of 10. 5gw electron beam. ( 3 ) the radial reflex klystron with an open foldaway - concentric cylindrical resonant cavity integrates the resonant cavity and reflex cavity within one foldaway coaxial cavity, so it is a very compact high power microwave device

    然後對這種器件進行了數值模擬研究,得到的典型結果為:輸入電壓620kv ,輸入直流功率io . sgw ,輸出微波峰值功率為2 . sgw ,虛陰極振蕩頻率被鎖定,頻率為1 . 25ghz ,微波飽和時間小於sns 。
  16. In order to realize low half - wave voltage, high polarzation extinction ratio, low pigtailing polarization crosstalk, low insert loss, precise tapped power ( ratio ) and good splitting beam ratio, the optimum design was performed

    為了實現低的半波電壓、高的偏振消光比、低尾纖串音、低插入損耗、精確的抽頭功率比和良好的分束比,我們對器件結構進行了優化設計。
  17. In fundamental theory, adaptive optics, electrostatic actuation, flexure beam theory and squeeze film damping are researched ; in fabrication, bulk micro fabrication process and surface micro fabrication process are researched and compared, then the structure parameters and layout of a 8 x 8 micromirror array are designed using summit foundry ; in analysis, analytical and numerical method are used to perform static analysis, modal analysis, transient analysis, frequency analysis and to characterize the farfield performance of this 8x8 micromirror array. finally, in order to realize large scale micromirror array with lower snap down voltage, advices are given for further research

    在基本理論方面,通過對自適應光學,靜電力驅動,彈性梁理論和擠壓薄膜阻尼的研究,確定了微變形鏡的配置方案;在加工方面對體加工工藝, mumps工藝和summit工藝進行了研究與比較,並選用殘余應力小,表面質量好的summit工藝對8 8的微變形鏡陣列原型進行了結構設計與版圖設計;在分析方面主要對微變形鏡單元的靜態特性,模態特性,瞬態響應,頻率響應和8 8規模的微變形鏡陣列的遠場光學模型進行了研究,確定了微變形鏡的性能參數。
  18. The results show that by increasing the beam current or beam radius, the gain of the structure can be increased. the decreasing of the beam voltage increases the gain of the twt but reduces the bandwidth

    得出的主要結論為:電流和電子注半徑的增大使得該結構的行波管的增益有較大增加,電壓的降低可使增益加大但帶寬減小。
  19. At the same time, in order to increase the gain of the radiation aperture, a new way to enlarge the waveguide radius is presented. and a gigawatt level of averaged output power with quasi - single tmoi mode is obtained at 3. 9ghz under the diode voltage of 550kv and the beam current of 23ka

    同時,為增大輻射口增益,提出了一種增大波導管半徑的方法,並且在二極體電壓為550kv 、束流為23ka的條件下,模擬獲得了平均功率達gw量級,頻率為3 . 9ghz的準tm _ ( 01 )模式的微波輸出。
  20. The maximum output of ion beam current is obtained at a charging voltage of 8 kv for the magnetic field power system, which is in accordance with the theory of magnetic insulation. the ion beam parameters are an accelerating voltage of 300 kv, an ion current density of 300 a / cm2 with beam pu lse width of 80 ns and with composition of 70 % proton and 30 % carbon ions

    在磁場電源電壓為8kv ,獲得了與磁絕緣理論相符的最大離子束流密度輸出,離子束參數為:加速電壓300kv ,離子束流密度300a cm ~ 2 ,離子束脈沖寬度80ns ,成分約為70 h離子和30 c離子。
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