bias field 中文意思是什麼
bias field
解釋
偏磁場-
Influence of irradiation bias field on response of pmos dosimeters
劑量計輻照響應的影響 -
The magnetostriction of bonded tb03dy07fe2 rod composites is 580x 10 " 6 at a field of 200 ka / m, and the magneto - mechanical coupling coefficient is 0. 40 at a bias field of 118 ka / m
相對而言制備工藝參數對合金的電阻率和抗壓強度影響較小，其電阻率等於熔煉法制備的材料的電阻率的10000倍左右，抗壓強度約為150mpa 。 -
However, although there has been a lot of academic discussions and monographs about it from chinese and oversea economists so far, the cognitions of chinese enterprise field about this topic are still not full and profound enough, but even bias or misconceived
但是，盡管國內外不少經濟學家對這一問題都有許多論述和專著，國內企業界對這一問題的認識仍不夠全面深刻，甚至存有許多偏見和誤解。 -
Analysis on nonuniform bias magnetic field of magneto - optic bragg cells
器件的不均勻偏置磁場分析 -
We propose a novel controllable atomic beam - spiller based on the uccc and discuss the splitting mechanism of the guided atomic beam in the beam splitter from two aspects of the magnetic - field distribution and the trace of the guiding centers. the splitting ratio of the beam splitter can be adjusted by adding a homogeneous bias magnetic field along the y - direction, and the relationship between the splitting ratio and the additional bias field is analyzed
本文提出了一種採用在y方向上加一偏置磁場來實現分束比可控的新穎原子分束器，並從磁場分佈和導引中心軌跡兩個方面，詳細分析和討論了基於u -型載流導體所構建的原子分束器的分束機制。 -
The bragg diffraction efficiency of gows in bismuth - doped yig film is caculated by considering the edge cut - off effect. the obtained theoretical curve is basically agreement with the experimental results. it is shown that the diffraction performance for mo bragg cells can be greatly increased by using an appropriately nonuniform bias field
2 .考慮到邊緣截止效應，論文中計算了靜磁正向體波對導波光的衍射效率，理論結果與實驗符合;從而表明，與均勻場情形相比，適當不均勻場可以大大提高磁光bragg器件的衍射效率。 -
It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad
當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。 -
The bias magnetic field of the bias coil driven by bias current and small signal test current, results in the induced signal of the control coil. the terminal voltage of the control coil is detected by the test circuit. then the signal containing the information of rotor displacement is obtained, from which we can get the dc voltage signal proportional to the rotor displacement through half - wave rectification circuit and low pass circuit. this dc signal is put into a pid controller to get the control signal of the rotor displacement
偏置測試電路向偏置線圈輸入偏置電流和小信號測試電流，兩者產生的偏置磁場在控制線圈產生感應信號，檢測電路檢測控制線圈端電壓並提取含有轉子位移信息的電壓信號，該信號經半波整流電路和低通濾波電路后得到與轉子位移成正比例的直流信號，再由pid控制器轉換為轉子位移的控制信號，最後控制信號輸入功放電路產生控制電流，實現閉環控制。 -
For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias
為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。 -
However, the msw - based mo devices haven ’ t still been applied extensively up to now because of low bragg diffraction efficiency. the generation and propagation characteristics of magnetostatic forward volume waves ( msfvws ) under nonuniform bias magnetic field and the bragg diffraction efficiency of gows with the msfvws are theoretically studied in this paper
本論文主要從理論上研究不均勻場中靜磁正向體波（ msfvw ）的激發與傳播特性，以及不均勻偏置磁場在提高靜磁波對導波光的bragg衍射效率方面所起的作用。 -
The influence of msfvw bandwidth on the diffraction efficiency is also considered. for the nonuniform bias magnetic field of u - type parabola profile, when the msw frequency is less than the cut - off frequency at the edge of mo film, the effective mo interaction length reduces. the edge cut - off frequency is determined by the maximum of the nonuniform field
對于拋物型分佈（開口向上）的偏置磁場，當激發靜磁波的rf頻率小於邊緣截止頻率時，磁光作用的有效長度減小（與靜磁波頻率有關） ;邊緣截止頻率由不均勻磁場的最大值決定，靜磁波的下限截止頻率由不均勻場的最小值確定。 -
The main points include : the bias electric field and the charges in the traps are the main reasons to generating hot electrons, the number and the kinetic energy of hot electrons are determinative for damage degree of ga ? s bands, relaxation degree of ga ? s network reflects the degree of breakdown, and the number of the detrapping of trapped electrons reflects the degree of restoration
其主要作用機制為:偏置電場和陷阱電荷電場可產生大量熱電子，熱電子的數量和動能決定ga一as鍵的損壞程度， ga一as的斷裂程度反映pcss 』 s的擊穿類型，而退陷電荷的數量則反映了pcss ， s可恢復損傷的程度。 -
The field in large - aperture photoconductors is mainly composed of bias field, space - charge field formed by transient distributing of carriers
光電導體內的電場是偏置電場、光電導體內光生載流子的空間瞬態分佈所形成的空間電荷電場等疊加形成的合電場。 -
The electronic pulse waveform of linear, non - linear and the critically transiting switching modes outputted from the si - gaas pcss ' s was observed and measured. especially, we repeatedly measured the bias field thresholds and lock - on field of the critical transiting mode from the linear to non - linear state
作者測試了半絕緣gaas光電導開關在線性、非線性以及從線性到非線性過渡的臨界狀態模式下輸出的電脈沖波形，特別是反復測量了開關在臨界狀態下的偏置電場閾值和lock - on電場強度。 -
In our experimentation, we combine fiber bragg grating with tb - dy - fe single crystal, we can measure the current which produces the magnetic field when we measure the shift of bragg wavelength because of magnetostrictive strain of tb - dy - fe single crystal in magnetic field, we also study the relation between bias field, strain of current sensor
本實驗將光纖布拉格光柵與tb - dy - fe結合起來，利用tb - dy - fe在磁場下的伸縮引起布拉格波長的改變，來測量產生磁場的待測電流的大小。在實驗中我們還研究了偏場，預應力與傳感器的關系，在這個過程中我們找到了與傳感器有關的最佳設計參數。 -
The result is that 7j, 1 does n ' t change under the effect of low bias field
不隨直流偏場的變化而變化；當直流偏場人北。 -
Bias field is comparatively static, so the influence to carriers is static too
偏置電場在光電導過程中變化較小，對載流子運動的作用穩定。 -
In the third experiment of the paper, the variation of t0 with the change of bias field was studied
隨直流偏場（民）的變化關系，實驗中發現：當低直流偏場0硼卅。時， t 。 『和t 。 -
From these results, it is testified that vbl distribute partly in the walls of id. in the last part of this paper, the critical temperature with the bias field was investigated
由於直流偏場對vbl起著徑向壓縮作用，而溫度會使vbl間的平衡間距變大，所以從t 。 -
Due to the intrinsic characteristics of the gaas material, semi - insulating ( si ) gaas pcss ' s have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss ' s made of other materials. the gaas pcss ' s can take on the particular phenomenon of lock - on effect when the thresholds of activating optical energy and bias field, which the devices demand, are meted simultaneously
然而，由於gaas材料的固有特性，半絕緣gaas光電導開關在其工作性能上有明顯的優點，特別是在一定的光能和電場閾值條件下， gaas光電導開關能產生lock - on效應現象，所以gaas光電導開關的器件研究和實際應用開發成為光電導開關研究者所關注的焦點。
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