bias magnetic 中文意思是什麼

bias magnetic 解釋
磁偏
  • bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
  • magnetic : adj. 1. 磁（性）的；（可）磁化的。2. 吸引人心的；有魅力的。3. 催眠術的。
  1. And that the bias - magnetic is direct ratio with relative v - s difference, and is inverse ratio with circuit resistance

    得出偏磁大小與相對伏秒差成正比，與迴路電阻成反比。
  2. Analysis on nonuniform bias magnetic field of magneto - optic bragg cells

    器件的不均勻偏置磁場分析
  3. We propose a novel controllable atomic beam - spiller based on the uccc and discuss the splitting mechanism of the guided atomic beam in the beam splitter from two aspects of the magnetic - field distribution and the trace of the guiding centers. the splitting ratio of the beam splitter can be adjusted by adding a homogeneous bias magnetic field along the y - direction, and the relationship between the splitting ratio and the additional bias field is analyzed

    本文提出了一種採用在y方向上加一偏置磁場來實現分束比可控的新穎原子分束器，並從磁場分佈和導引中心軌跡兩個方面，詳細分析和討論了基於u -型載流導體所構建的原子分束器的分束機制。
  4. The bias magnetic field of the bias coil driven by bias current and small signal test current, results in the induced signal of the control coil. the terminal voltage of the control coil is detected by the test circuit. then the signal containing the information of rotor displacement is obtained, from which we can get the dc voltage signal proportional to the rotor displacement through half - wave rectification circuit and low pass circuit. this dc signal is put into a pid controller to get the control signal of the rotor displacement

    偏置測試電路向偏置線圈輸入偏置電流和小信號測試電流，兩者產生的偏置磁場在控制線圈產生感應信號，檢測電路檢測控制線圈端電壓並提取含有轉子位移信息的電壓信號，該信號經半波整流電路和低通濾波電路后得到與轉子位移成正比例的直流信號，再由pid控制器轉換為轉子位移的控制信號，最後控制信號輸入功放電路產生控制電流，實現閉環控制。
  5. Ppfc working principle, circular current and effects of clamping capacitor are studied in this paper in detail. because of the clamping capacitor, ppfc have some good features compared with ppc : reducing the fluctuate of the input current ; restraining the voltage spike of the power mosfet ; avoiding the bias - magnetic of the transformer

    由於箝位電容的加入，相對于推挽電路而言，該拓撲具備了一些獨特的優點：減小了輸入電流的脈動：削弱了開關管的關斷電壓尖峰；有效抑制了變壓器的偏磁。
  6. Magnetostatic wave ( msw ) is a kind of slow dispersive wave propagating in magnetic medium, which is also a microwave electromagnetic wave. so the propagation characteristics of msw can be controlled by bias magnetic fields

    靜磁波（ msw ）是一種在磁性介質中傳播的慢色散波，也是一種微波電磁波，可通過磁控方法改變靜磁波的傳播特性，並與具有電磁性的物質發生作用。
  7. However, the msw - based mo devices haven ’ t still been applied extensively up to now because of low bragg diffraction efficiency. the generation and propagation characteristics of magnetostatic forward volume waves ( msfvws ) under nonuniform bias magnetic field and the bragg diffraction efficiency of gows with the msfvws are theoretically studied in this paper

    本論文主要從理論上研究不均勻場中靜磁正向體波（ msfvw ）的激發與傳播特性，以及不均勻偏置磁場在提高靜磁波對導波光的bragg衍射效率方面所起的作用。
  8. The influence of msfvw bandwidth on the diffraction efficiency is also considered. for the nonuniform bias magnetic field of u - type parabola profile, when the msw frequency is less than the cut - off frequency at the edge of mo film, the effective mo interaction length reduces. the edge cut - off frequency is determined by the maximum of the nonuniform field

    對于拋物型分佈（開口向上）的偏置磁場，當激發靜磁波的rf頻率小於邊緣截止頻率時，磁光作用的有效長度減小（與靜磁波頻率有關） ;邊緣截止頻率由不均勻磁場的最大值決定，靜磁波的下限截止頻率由不均勻場的最小值確定。
  9. Then a thorough analysis to the bias - magnetic of ppfc is made. the retraining effects of the main parameters ( include clamping capacitance c, output filter inductor lf, load r, the leakage inductor ls and source winding resistance r ) are studied under the conditions of different von, different ton and different winding parameters. then a conclusion can be drew, that the smaller lf and the bigger r are, the better the bias - magnetic is restrained and c has a best value to retrain the bias - magnetic

    分別對管壓降不同，導通時間不同以及兩原邊繞組參數不一致（包括漏感、電阻、激磁電感三種情況）的情況下，主要參數（包括箝位電容c 、輸出濾波電感lf 、負載r 、原邊繞組漏感ls 、原邊繞組電阻r ）對偏磁的抑制作用進行了模擬分析研究，得出lf越小， r越大時激磁磁勢偏移量ni越小， c在其他參數確定時對抑制偏磁有最優值等結論，為參數的優化設計提供了依據。
  10. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  11. In this paper, the bias - magnetic of ppfc and the parameters effect on the bias - magnetic are all studied. firstly, the bias - magnetic principle of ambipolar converter and some basic relations are analysed under two different conditions ( different von and different ton )

    首先在導致偏磁的兩種情況下（管壓降不同和導通時間不同）下，從理論上分析了雙極性變換器變壓器偏磁原理及基本關系。
  12. Such variations are found that due to applied magnetic field from the substrate. the aspect and brightness of the glow and the self - bias voltage for the target changes significantly

    實驗中觀察到，在外加磁場的作用下，等離子體放電的輝光的明亮程度及外貌和靶面自偏壓發生了明顯變化。
  13. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  14. Comparing with usual push - pull converter, the bias - magnetic can be retrained due to the clamping capacitance. but bias - magnetic can not be avoided

    推挽正激變換器相比普通的推挽式變換器，由於箝位電容的存在，偏磁可以被抑制，但並不能完全消除。
  15. The experimental results showed that under certain conditions of preloaded press and bias magnetic field, a satisfied static characteristic was obtained

    試驗結果表明超磁致伸縮致動器在合適的偏置磁場及預壓力作用下，能達到較佳的輸出電流-位移及電流-輸出力響應特性。
  16. This conclusion is useful to optimize the converter. then it is proposed that the effects of retraining bias - magnetic and reducing the voltage stress of mosfet should be both considered in selecting the clamping capacitance

    本文提出對于推挽正激的關鍵參數? ?箝位電容的選取要綜合考慮對偏磁的抑制作用和對功率管尖峰的抑制作用，並給出了選取方法。
  17. Alternating current magnetic bias

    交流偏磁
  18. In our experimentation, we combine fiber bragg grating with tb - dy - fe single crystal, we can measure the current which produces the magnetic field when we measure the shift of bragg wavelength because of magnetostrictive strain of tb - dy - fe single crystal in magnetic field, we also study the relation between bias field, strain of current sensor

    本實驗將光纖布拉格光柵與tb - dy - fe結合起來，利用tb - dy - fe在磁場下的伸縮引起布拉格波長的改變，來測量產生磁場的待測電流的大小。在實驗中我們還研究了偏場，預應力與傳感器的關系，在這個過程中我們找到了與傳感器有關的最佳設計參數。
  19. This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a three - flow controller, side - installed heating tube, computer pid automatic temperature control, and two sets of flat magnetic controlled target, contra - variant magnetic - controlled power source, and contra - variant bias power with easy operation and top grade film layer. they are widely used in decorative film layer, and compound film layer in plating

    該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦自動換檔真空計，三路流量控制器，邊裝式加熱管，電腦pid自動控溫，配備兩套邊裝式平面磁控靶，逆變式磁控電源和逆變式偏壓電源，操作簡單，膜層細膩，廣泛適用於鍍制各種裝飾膜層和復合膜層。
  20. Ptmn has practically been used as anti - ferromagnetic layer to pin ferromagnetic layers because of its large exchange bias, high blocking temperature and excellent thermal stability. on the other hand, ptmn films deposited by magnetron sputtering without substrate heating require a relatively high temperature post - deposition annealing in magnetic field to induce a unidirectional exchange field hes

    由於ptmn反鐵磁材料具有大的交換偏置，比較高的blocking溫度和較好的熱穩定性，在自旋閥結構中ptmn已經在實際應用上用來釘扎鐵磁層。
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