bipolar field 中文意思是什麼
bipolar field
解釋
雙極場-
Bigfet bipolar isolated - gate field effect transistor
雙極型絕緣柵 -
Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits
半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。 -
Using two - dimensional numerical simulation software, analyze the affect of isolated - trench ' s parameters on the breakdown voltages of three - class bipolar power devices ( whose ideal breakdown voltages correspond to 40v, 70v and 100v ), which include width, depth, isolated material ' s dielectric constant, fixed interface - charge and field plate located at the top of deep - trench termination
利用二維數值模擬軟體分析了影響三類典型應用的雙極功率器件（對應的理想擊穿電壓bv _ （ cro ）分別為： 40v ， 70v ， 100v ）擊穿電壓的諸多因素（主要包括阱寬度、阱深度、阱內填充介質、界面固定電荷、阱區頂端場板） 。 -
Analysis of static magnetic field of an iron style bipolar axial magnetic field vacuum interrupter by 3d finite element method
鐵芯式兩極縱磁真空滅弧室三維靜磁場有限元分析 -
High - frequency and microwave bipolar power devices have been largely applied in military and civil electronic equipment, mainly in communication, radar ( including navigation ) and electron - confrontation field
雙極高頻、微波功率器件已大量應用於軍用、民用電子設備中，其典型應用主要在通信、雷達（含導航）和電子對抗等領域。 -
Characterization of an external - magnetic field mid with polymer anode and a self - magnetic field mid with graphite anode operated in unipolar and bipolar pulse mode, respectively, has been performed. it is found that the characteristics of hipib are mainly depended on two crucial factors, i. e. the properties of insulated magnetic field and anode plasma
通過聚合物陽極的單極脈沖模式外磁絕緣離子二極體和石墨陽極的雙極脈沖模式自磁絕緣離子二極體工作特性的實驗研究發現，影響hipib產生特性的主要因素是離子二極體的絕緣磁場性質和陽極等離子體特性。 -
For the self - magnetic field mid with relatively simple structure, the stability of self - magnetic field generated by electron flow is obtained by adjusting the diode gap and the delay time of bipolar pulse. under the combined effect of self - magnetic field and electrical field in the diode, stable and dense anode plasma was produced
對于具有簡化結構優點的自磁絕緣離子二極體，通過調節陰陽極間距保證電子流造成的自磁場穩定形成，同時控制合適的雙極脈沖延遲時間，電磁場共同作用形成了穩定的稠密陽極等離子體。 -
Finally, after calculating iron loss and copper loss with the magnetic field analysis, use it as a heat source, and conduct a non - stationary analysis independently with the three dimensional thermal analysis which concentrates on the effect of the heat transfer coefficient on the temperature rise. in this paper, a bipolar switched reluctance machine system model is also established with an h bridge converter as its power circuit topology
另外，本文還建立了雙極型sr電機系統模型，採用了h橋式功率主電路，詳細分析了其工作原理，並在磁場、損耗等方面與採用不對稱半橋變換器的傳統單極型sr電機系統進行了對比。 -
For the driving form, this system designs high - stability bipolar constant current source which can continuously be adjusted by voltage. this constant current source can offer drive magnetic field for the actuator
對于驅動形式，本文採用了恆流源驅動，設計了高穩定度的壓控連續可調型雙向恆流源作為驅動器的輸入來提供驅動磁場。 -
There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication
目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。 -
Well, cmos complementary metal - oxide semiconductor chips use metal - oxide semiconductor field effect transistors mosfets. these are fundamentally different from bipolar transistors
哦， cmos （互補金屬氧化物半導體）晶元使用金屬氧化物半導體場效應晶體管（ mosfet ） ，顯然它是一種fei （場效應晶體管） 。 -
It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects
Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
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