bismuth oxide 中文意思是什麼

bismuth oxide 解釋
三氧化二鉍
  • bismuth : n. 【化學】鉍〈略作 Bi〉。
  • oxide : n. 【化學】氧化物。 antimony oxide 銻白,氧化銻。 deuterium oxide 重水,氧化氘。 mercuric oxide 氧化汞。 nitric oxide 一氧化一氮。
  1. Bismuth ruthenate and silver were selected as conductor phases and the mixture of calcium oxide - alumina - silicon dioxide ( cao - al _ 2o _ 3 - sio _ 2 ) glass and lead oxide - boron oxide - silicon dioxide ( pbo - b _ 2o _ 3 - sio _ 2 ) glass was selected as inorganic binder phases. it was found that, with the increasing of volume fraction of silver and conductor phase, sheet resistivities descend and there are critical thresholds

    實驗發現,隨著功能相百分含量的增加,電阻膜層的方阻值逐漸減小,存在兩個臨界閾值,電阻溫度系數偏向正值;功能相中銀百分含量增加,膜層的方阻值逐漸減小,有一個臨界閾值,電阻溫度系數偏向正值。
  2. The results indicated that the sample was spheroidic nanometer particles and solid - phase method was better in preparation nanometer bismuth oxide

    實驗結果還表明固相法制備納米氧化秘比硝酸鹽水解法更好。
  3. Chapter 5 preparation and characterization of nanometer bismuth oxide nanometer bi2o3 was prepared by both solid - phase method and nitrate hydrolyzation method

    第五章納米氧化秘的制備與表徵本部分以無機鹽為原料,採用硝酸鹽水解法和固相法制備了納米級氧化秘粉末。
  4. Sequential determination of cu, pb, fe, cd and ni in bismuth and bismuth oxide by atomic absorption spectrometry

    原子吸收法連續測定鉍及氧化鉍中銅鉛鐵鎘鎳
  5. Square resistance of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear increased and tcr of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear decreased with increase of content of ag. the electric conduction model of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was formed. bapb _ ( 1 - x ) bi _ xo _ 3 based thick film is actually conductive with lead and bismuth oxide, the main factors on the properties of thick film is the electric resistance and contact resistance of conductive particulates ; the electric conduction model of ag - bapb _ ( 1 - x ) bi _ xo _ 3 based thick film : the general structure of conductive network is constructed by conductance chain of ag and is submerged into bapb _ ( 1 - x ) bi _ xo _ 3 based conductive ceram

    本文認為: bapb _ ( 1 - x ) bi _ xo _ 3厚膜電阻是一種摻有鉛、鉍氧化物的導電陶瓷燒結體,影響厚膜電阻導電性能的主要因素是導電顆粒自身電阻與顆粒間接觸電阻;厚膜電阻摻銀后的導電微觀結構是由許多微小串聯或並聯的ag顆粒組成的導電鏈構成的結構復雜的多維導電網路,此導電網路被「淹沒」在bapb _ ( 1 - x ) bi _ xo _ 3導電燒結體中。
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