bonding pressure 中文意思是什麼

When tlp bonding with proper pressure, the oxidation on the surface of al mmcs was n ' t the primary effect of the properties of the joint

採用適當的壓力進行瞬間液相連接時，鋁基復合材料表面的氧化膜已不是影響接頭性能的主要因素。

When tlp bonding with pressure can avoid the effect of oxidation, obtain excellent joint property. oxidation was n ' t observed in the joint region by microanalysis

另外，研究表明，氧化膜在無壓瞬間液相連接時成為影響接頭性能的主要因素。

Abstract : the processes of thermal - bonding and the features of raw material were breifly described, the temperature, pressure and speed to properties of thermal - bonded fabric were demonstratively related on the basis of three specific trials. futhermore, the authors present a point of view about the developing tendency of themal - bonding technologies for hygienic market after having an analysis upon current market status

文摘:簡要介紹了熱軋非織造布工藝流程和衛生用熱軋非織造布原料的特點與選擇.通過對3個試驗的描述和對試驗結果的分析，詳細地論證了溫度、壓力和速度對熱軋非織造布性能的影響.根據市場的現狀，發表了對衛生用薄型非織造布生產技術發展方向的展望

The " green " bricks are then treated in an autoclave under steam pressure forming hydrated calcium silicate bonding the aggregate particles into a strong and durable brick

然後該綠色磚在一個高壓鍋的蒸汽壓力下進行處理，形成水化硅酸鈣再結合聚合物顆粒的堅固耐用的磚塊多孔磚和加氣

Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性

The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。

Abstract : in this paper a new technology for upperpunch in ceramic tile die with isostatic pressing is introduced, static - pressure area ratio and bonding area ratio are changed into independent technological parameters and can be separately designed

文摘:本文介紹了等靜壓瓷磚模具中上模芯的一種新型工藝結構，它使靜壓比和粘貼比成為兩個互相獨立的參數，可以分開進行設計。

3can endure high water pressure up to 0. 12mpa with the barrel injected by strong plastic materials, this is different from conventional technology of cutting and bonding

3外桶專用高強度塑料注塑，溶劑壓合成形，不同於常規的切割機焊接工藝，承受水壓0 . 12mpa以上。

Gas pressure bonding

高溫氣的等壓法

For example, the silicon is etched anisotropically in the koh solution, the lucent al film is made with the magnetron sputtering system, the pressure hole is drilled by the supersonic stiletto machine and the silicon and the glass are bonded with electrostatic bonding setup

例如， koh溶液對硅的各向異性腐蝕，磁控濺射臺製作光亮的鋁膜，超聲打孔機製作導壓孔，靜電鍵合裝置對硅島膜與玻璃極板的陽極封接等等。

The scraping coat technique for the thin layer propellant loading processing in mini inside radius solid rocket motor, precuring - bonding technique and secondary vacuum - pressure casting are developed and used to load the big slenderness ration ( 12. 5 / 1 ) solid rocket motor with thin web, internal insertion radial concentric dual - layer propellant

探索出小口徑薄層藥刮塗成型工藝、預固化粘結技術，二次真空加壓澆注，實施了大長細比（ 12 5 1 ）發動機薄肉厚內嵌式徑向同心雙層裝藥。

Through the small specimen tests, we found the failure of the bonding interface between frp and concrete can be avoided and the efficiency can be highly improved, as long as the pressure is almost 0. 2 kg / cm2

開展小試塊粘結加壓實驗研究，結果表明只要施加0 . 2kg / cm ~ 2左右的接觸壓就能避免發生纖維與混凝土之間的脫膠破壞，大幅提高加固效率。

Deformation of diffusion bonded parts was correlated with pressure application. m ethod o f controlling deformation and obtaining non - deformation bonding was proposed

針對實際構件，深入分析了加壓方式和變形率的關系，並提出了控制變形量得到無變形接頭的方法。

Based on silicon - piezoresistive method, the paper first gives the theory of array silicon piezoresistive pressure, acceleration sensor, and the design of its incorporated chip, microstructure and out - circuit. several key techniques of making array silicon piezoresistive pressure, acceleration sensor such as 1c technic, mems ( silicon - silicon direct bonding, anodic bonding, anisotropic etching ) is also studied. minuteness engine machining, anode bonding etc. in the paper there are three ways which are examine - form, curve simulanting, to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation, fusion technology etc. therefore, it providing referenced values of ways and directions for sensor system directing on

論文首先以硅壓阻效應原理為基礎，討論了陣列式硅壓力、加速度傳感器的設計原理，並對陣列式硅壓力、加速度傳感器中集成敏感晶元（壓力、加速度） 、總體結構和壓力陣列的信號處理電路進行了設計，在陣列式硅壓力、加速度傳感器的研製中，還研究了半導體平面工藝、大規模集成電路技術、微機械加工技術（硅硅鍵合、靜電封接、各向異性腐蝕）等關鍵技術的應用。