boron-oxygen 中文意思是什麼
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Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation
結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。 -
In 2005, 61 physical and chemical parameters were measured and analysed in sediments. these included particle size, electrochemical potential as highly anoxic sediment with negative potential is related to organic pollution, chemical oxygen demand which indicates organic pollutants, total sulphide inorganic constituents, source of the unpleasant - smelling gas hydrogen sulphide, 15 metals and metalloids aluminium, arsenic, barium, boron, cadmium, chromium, copper, iron, lead, manganese, mercury, nickel, silver, vanadium and zinc, and trace toxic organics pahs and pcbs - 16 compounds and 18 congeners respectively
2005年，沉積物監測包括分析61種物理及化學參數，其中有粒子大小電化學勢有機污染促使沉積物缺氧，而讓電化學勢呈負數值化學需氧量顯示有機污染程度總硫化物無機物，是造成難聞氣體硫化氫的主因15種金屬及準金屬鋁砷鋇硼鎘鉻銅鐵鉛錳汞鎳銀釩及鋅和痕量毒性有機物多環芳烴及多氯聯苯分別為16種復合物及18種同質物。 -
In order to avoid light degradation, low interstitial oxygen content and low boron concentration b - doped p - type cz - si material should be used, for example, the resistivity can be from 5 - 10. cm, the efficiency has reached to 22. 0 %
上述研究工作表明：為了避免光衰減，提高矽片少子壽命，應該選擇低氧濃度的矽片，並降低硼的摻雜濃度，即：使用高阻材料製作太陽電池。 -
Methods for chemical analysis of nuclear - grade boron carbide powder. determination of oxygen content
核級碳化硼粉末化學分析方法.氧量的測定 -
Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。 -
Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
鍺對重摻硼直拉硅中氧沉澱的影響 -
We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation
在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。 -
For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi
另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。 -
In this paper, firstly, the effect of heavy boron - doping on oxygen precipitation was investigated. after annealed at different conditions, it is found that oxygen precipitation is enhanced by heavily boron doping, especially at high temperature
本文研究了直拉重摻硼單晶硅的氧沉澱行為，著重研究了直拉重摻硼硅單晶中的氧沉澱的熱處理、內吸雜、 rtp處理等性能。 -
In this part, the issues and mechanism of light degradation of b - doped p - type cz - si solar cells are introduced firstly, it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of b - doped cz - si solar cells. then in the experiment the b - doped cz - si is chosen as the substrates and annealled at different temperature
文中首先介紹了摻硼單晶硅太陽電池的光照衰減問題及衰減機制，然後以p型摻硼單晶硅為實驗樣品，經過不同溫度的熱處理，對影響光衰減的主要因素硼、氧進行了研究。
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