breakdown temperature 中文意思是什麼

breakdown temperature 解釋
分解溫度
  • breakdown : n 1 崩潰，倒塌；破損，損耗；損傷；損壞，故障；失敗，挫折；中斷，停止。2 【航空】下降；【電學】擊...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. Temperature coefficient of breakdown voltage

    擊穿電壓溫度系數
  2. Using the lagrangian at a finite temperature of the scalar field which can generate global cosmic string in the spontaneous breakdown, solved the gravitational field equation outside the core of a global cosmic string at the background of temperature, corrected the result in the theory at zero temperature. on the basis of this, the properties of the gravitational field outside the core of a global cosmic string are discussed

    考慮溫度效應，運用改寫的能自發破缺產生整體宇宙弦的標量場在有限溫度下的拉氏密度，求解了整體宇宙弦核外的引力場方程，對零溫理論中的結果作了修正，進而討論弦核外引力場的性質
  3. The influence of burning system on the properties and structure of the ceramic capacitors has been studied under the certain temperature system, the optimum sintering temperature of the ceramics was primarily decided by the content of bi2o3 ? 3tio2. the sintering temperature dropped with the adding of bi2o3 ? 3tio2. at the range of suitable sintering temperature, slow heating and low temperature sintering can obtain fine grain and dense structure. it results in the improving of the breakdown voltage for the middle - high voltage ceramic capacitors

    研究了燒成工藝制度對電容器陶瓷性能和結構的影響，結果表明：在一定的升溫保溫時間下，瓷料的最佳燒結溫度主要取決于組成中bi _ 2o _ 3 ? 3tio _ 2的含量， bi _ 2o _ 3 ? 3tio _ 2含量的增加將降低燒結溫度；在合理的燒結溫度范圍內，慢速升溫和低溫燒結將有利於得到細晶緻密結構，從而改善中高壓陶瓷電容器的耐壓強度。
  4. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  5. And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown

    而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。
  6. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  7. Theoretical analysis indicates, the two technology helps reduce the concentration of current, lower the peak junction - temperature, and effectively avoid the appearance of devices " breakdown caused by heat and current

    理論分析表明：上述兩種技術，有利於減小電流集中現象，降低器件峰值結溫，避免熱擊穿和二次擊穿的發生。
  8. The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics

    用sims分析結合器件直流特性測試，比較了在不同條件下淀積的氮化硅對gaas硫鈍化表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍化效果的影響。
  9. Through the relations of temperature - time, pressure - time and pressure - breakdown voltage, the relation between the breakdown voltage in different stages and time is derived

    通過金鹵燈的溫升?時間關系、氣壓?時間關系以及壓力?擊穿電壓的關系，得出了金鹵燈在不同階段的時間?擊穿電壓的關系。
  10. The paper studied withstand voltage level, influence factors, breakdown process and breakdown mechanism of covered with snow or ice through some theory calculation results, many test data and phenomena. the paper got the conclusions that withstand voltage strength of insulator covered with snow or ice descended largely, and the amount of ice or snow build - up, number of flashover, string length, environment temperature and leak current etc had obvious effects on flashover voltage values of insulators

    通過大量的試驗數據和現象研究冰雪條件下絕緣子的耐壓水平、影響因素及其擊穿機理，如串長的影響、環境溫度、絕緣子形狀及冰的干濕程度、閃絡次數、冠雪量和積冰量的影響、雪的密度、氣壓和濕度的影響等，並對試驗結果與理論分析結果進行了對比，分析其是否一致。
  11. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  12. It is showed in this thesis that temperature is very important to single photon detection, but too low temperature is not good for detection because of afterpulse and the breakdown voltage

    本文的研究表明，溫度對單光子探測有著非常重要的影響，考慮到后脈沖的影響以及雪崩電壓的變化，溫度並不是越低越好。
  13. In 1992, li zhiqing ' s master degree paper, the temperature stability of vertical bloch line ( vbl ) chains in walls of second hard dumbbell domain ( iid ) in the uncompressed state was investigated experimentally and a threshold temperature ( 7 ) nd at which to breakdown the vbl chains in the walls of iid was found

    由於其轉化過程中vbl沒有丟失，也就是說，其疇壁結構沒有發生變化，所以我們再次證明了三類硬磁疇的疇壁結構是一致的，在直流偏場下之所以會出現不同的縮滅行為，完全是由於vbl的數目引起的。
  14. Cassava root is used for carbohydrate source in tropical region. quality of cassava starch is variable and affected by many factors. an attempt was made to evaluate the effect of peeling, washing and drying on starch purity and starch paste viscosity. paste viscosity were based on results of rapid visco analysis ( rva ). the results of this study revealed that : peeling, washing and drying temperature significantly affected cassava starch purity and starch paste viscosity. the starch from unpeeling root had a dullness color, but had higher peak viscosity, trough, final viscosity, breakdown and setback than that of starch from peeling root. more washing not only increased starch purity, but also improved starch past characteristics, such as peak viscosity, trough, final viscosity, setback and pasting temperature. different drying temperature had no effect on starch whiteness. starch purity had a little increase with drying temperature increasing. in general trend, starch dried at higher temperature had higher peak viscosity, trough, breakdown, final viscosity and higher setback

    木薯在熱帶地區是碳水化合物的主要來源.木薯澱粉的品質受許多因素的影響.本項研究著重探討澱粉提取過程中，削皮、水洗、乾燥溫度對澱粉純度、白度和澱粉糊化粘度的影響.結果表明，未削皮的澱粉樣品色發灰，但具有比削皮處理高的峰值粘度、 95最後粘度、 50時粘度、峰值降和持久性.增加水洗次數，不但能增加澱粉純度，還可提高澱粉高峰值粘度、 95最後粘度、 50時粘度、持久性和糊化溫度.不同乾燥溫度對澱粉白度無影響，但澱粉純度隨乾燥溫度的提高而稍稍增加.通常高的乾燥溫度有高的峰值粘度、 95最後粘度、峰值降、 50時粘度和持久性
  15. Cooling blade temperature kuo low either measure wen body has not receive or measure wen body breakdown

    散熱片溫度過低或測溫體未接或測溫體故障。
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