breakdown voltage 中文意思是什麼

breakdown voltage 解釋
擊穿電壓。

  • breakdown : n 1 崩潰，倒塌；破損，損耗；損傷；損壞，故障；失敗，挫折；中斷，停止。2 【航空】下降；【電學】擊...
  • voltage : n. 【電學】電壓，電壓量，伏特數。 the working voltage （電氣的）耐壓限度。
  1. Of 30 to 50, an emittercollector breakdown voltage

    為5v ，晶體管的截止頻率
  2. Measuring methods of photocell - inverse breakdown voltage

    光電池測量方法反向擊穿電壓
  3. Insulating liquids - determination of the breakdown voltage at power frequency

    絕緣油擊穿電壓測定法
  4. Temperature coefficient of breakdown voltage

    擊穿電壓溫度系數
  5. Dielectrie breakdown voltage

    介質崩潰電壓
  6. Avalanche breakdown voltage

    雪崩嘩電壓
  7. Output breakdown voltage

    輸出破壞電壓
  8. Drain breakdown voltage

    漏擊穿電壓
  9. Insulating liquids - determination of the breakdown voltage at power frequency - test method

    絕緣液體.電源頻率擊穿電壓的測定
  10. Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage

    針對目前厚外延工藝的缺點，提出的薄外延ldmos採用n埋層，通過優化n埋層長度、注入劑量可提高器件耐壓。
  11. 2 、 metal halide lights start more difficult than other types of high - intensity gas discharge lights. the work circuit of the metal halide lights and the lc series resonance start controller are analyzed, and its shortcomings are noted. through the relations of breakdown voltage ? time, the thesis discusses a quick - start controller using pulse transformer

    2 .金屬鹵化物燈的啟動問題較其它類型的高強度氣體放電燈更為困難，作者對金屬鹵化物燈的工作電路進行了理論分析，對目前常用的lc串聯諧振啟動方式進行了較為詳細的理論研究，並指出了其存在的缺點。
  12. In order to improve process quality and increase probability, we optimize ohm contact resistance and breakdown voltage of devices by adjusting process conditions. finally, dc - 500mhz midf switch is fabricated, in which some important conclusions and suggestions are introduced

    工藝研究的重點是改進工藝質量，提高成品率，為此我們通過調整工藝條件來優化歐姆接觸電阻和提高器件的擊穿電壓。
  13. The influence of burning system on the properties and structure of the ceramic capacitors has been studied under the certain temperature system, the optimum sintering temperature of the ceramics was primarily decided by the content of bi2o3 ? 3tio2. the sintering temperature dropped with the adding of bi2o3 ? 3tio2. at the range of suitable sintering temperature, slow heating and low temperature sintering can obtain fine grain and dense structure. it results in the improving of the breakdown voltage for the middle - high voltage ceramic capacitors

    研究了燒成工藝制度對電容器陶瓷性能和結構的影響，結果表明：在一定的升溫保溫時間下，瓷料的最佳燒結溫度主要取決于組成中bi _ 2o _ 3 ? 3tio _ 2的含量， bi _ 2o _ 3 ? 3tio _ 2含量的增加將降低燒結溫度；在合理的燒結溫度范圍內，慢速升溫和低溫燒結將有利於得到細晶緻密結構，從而改善中高壓陶瓷電容器的耐壓強度。
  14. Breakdown voltage meter

    耐電壓表
  15. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  16. Interface charge has a profound influence on the breakdown voltage of flr structure. on severe condition it can make the outer flr far from main junction disfunction

    界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。
  17. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  18. Fluids for electrotechnical applications. methods for the determination of the lighting impulse breakdown - voltage of insulating liquids

    電工裝置用流體.絕緣液體光脈沖擊穿電壓的測定方法
  19. A series of multi - pulse experiments are performed at breakdown voltage up to 400kv, peak current up to 30ka with an interval of 5ms, which shows spark gap switch could be obtained good insulation recovery in several milliseconds under the condition of water dielectric pulse power modulator with low load

    在擊穿電壓400kv ，峰值電流30ka ，脈寬40ns的工作參數下，採用吹氣的辦法（氣流速度30m / s ） ，使氣體火花開關多脈沖運行間隔達到5ms ，實驗結果與理論估計相符。
  20. It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

    通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。
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