carrier density 中文意思是什麼
carrier density
解釋
載劣密度-
6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient
5 、用等離子體增強的化學汽相沉積的方法制備了zn3n2薄膜，首次通過熱氧化zn3n2的方法，制備出了受主型載流子濃度為1017cm - 3的p - zno薄膜。 -
It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x
晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。 -
Charge carrier density gradient
電荷載流子密度梯度 -
In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet
本文通過求解自洽薛定諤方程，確定了應變硅mosfet反型層的子能帶結構，在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率，綜合考慮各子能帶上的載流子的濃度分佈，建立了應變硅mosfet載流子遷移率的解析模型。 -
The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。 -
3 the carrier transportation and transition in led active layer had been analyzed. the larger number of quantum wells are in active layer, the lower carrier density will be, and the better confinement of carrier is
） y方向上的有效質量減小，而輕空穴則具有負的有效質量，這對器件電注入和光輻射復合是有利的。 -
( 6 ) reasoning of influence on first round hit probability of frag - demolition projectile by accuracy, by density, and by size of target is made, so is reasoning of influence on first round hit probability of carrier projectile by dispersion of sub - projectiles
（ 6 ）分析論證了密集度、準確度、目標尺寸對殺爆彈首發命中概率的影響，分析了子母彈子彈密集度（散布）對子母彈首發命中概率影響。 -
On the basis of this, the effective reflective index with the variation of the carrier density is discussed. this paper also analyzed the random facet phase and the length of the cavity ' s influence on threshold characteristic. especially, the wavelength tuning characteristics have been investigated in detail when one segment works as absorbed region
在此基礎上，研究了每一段等效反射率譜曲線隨載流子濃度變化的情況；分析了邊界相位的不確定性以及激光器腔長對閾值特性的影響；重點討論了其中一段工作在吸收狀態下的波長調諧性質。 -
The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor, ionization effects of neutron on the vlsi made with cmos technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray
對試驗結果綜合分析得出：在反應堆的綜合輻照環境下，中子電離效應較弱，並且由於中子位移效應引起載流子遷移率降低和載流子濃度降低，使得總的靜態電流下降，從而抵消中子和射線綜合電離導致的靜態電流增長。 -
With the finite - difference method, self - consistent solutions for the possion ' s equation, injected current density, carrier concentration, optical field and thermal conduction equations have been realized to study the thermal - field properties, the coupling of electricity, thermal and optical - fields, and the influences of n - dbr and double oxide - confining regions on the characteristics of vcsels
本文建立了一個直接耦合的準三維理論模型，通過有限差分法求解泊松方程、載流子擴散方程、熱傳導方程和光場方程的自洽解，研究了vcsel的熱場分佈特性，並實現了電、熱和光場的耦合，同時考慮了n - dbr及雙氧化限制層對vcsel特性的影響。 -
Standard test method for vibrated apparent packing density of fine catalyst and catalyst carrier particles and powder
細粒催化劑和催化劑載體顆粒和粉末振動表觀填充密度的標準試驗方法 -
In this paper the average field is used to describe the carrier in each segment based on the carrier distribution in two - segment dfb lasers and the strict coupled wave theory is used to describe the photon density. combined with these two methods, the threshold condition expression has been derived for the first time
基於兩段式dfb激光器中的載流子分佈事實，本文對每一段內的載流子濃度用平均場方法處理；對于激光器內的光場分佈則應用嚴格的耦合波理論進行研究，通過將這兩種方法有機結合，首次導出了兩段式dfb激光器的閾值條件表達式。 -
In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease
對sicjfet的電參數如電子濃度，遷移率，電阻率和空間電荷區密度在中子輻照下的變化進行了分析，提出了中子輻照下6h - sicjfet的器件模型，利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。 -
Using this expression, the interrelation of the carrier density in each segment and the emission wavelength can be predicted while the laser is lasing
該表達式可以用來預測激光器激射工作時，兩段載流子濃度和激射波長之間的相互關系。 -
The equivalent cavity model is used to deduce the threshold condition of the ecld, and the expression of the threshold carrier density n ( v ) when ecld is tuned to oscillate at different frequencies has been obtained. using the expression of n ( v ) and the carrier dependent refractive index, the simple basic equation describing the bistable characteristics has been derived after choosing an appropriate reference frequency nf
通過建立等效腔模型來推導外腔半導體激光器的閾值條件，得到ecld在不同頻率v振蕩所需的閾值載流子密度n （ v ）表達式，利用該表達式及相關的折射率表達式，在選擇合適的參考載流子密度n _ f后，導出了一個描述雙穩所需的基本方程。 -
Sixteen sup - processed from 110k to 300k were found. the range of trap energy is from 0. 19ev to 0. 34ev. the maximum of the initial density distribution of the carrier in the traps locates 0. 23ev, and the curve deviated from guass type
本文採用一種tl曲線的自動分解技術，對硅橡膠輻照老化tl曲線進行了自動分峰，結果發現在110k ~ 300k的溫度范圍內有16個子過程，其陷阱活化能變化范圍為0 . 19 ~ 0 . 34ev ，被陷阱俘獲載流子初始濃度的分佈在0 . 23ev處具有極大值，且呈偏離高斯型的分佈。 -
The volume of the output filter can be reduced greatly used in cascade inverter with carrier - phase - shifted spwm technology which has a high equivalent switching frequency and a good output sine wave. it is the base of the high power density of asi
載波移相正弦脈寬調制技術有獨特的消諧波優勢，其等效開關頻率高，輸出波形正弦度好，可以大幅減小濾波器體積，為實現系統的高功率密度奠定基礎。 -
Standard test method for mechanically tapped packing density of fine catalyst particles and catalyst carrier particles
精細催化劑顆粒和催化劑載體顆粒的機械振實填充密度的標準試驗方法 -
With numerical calculations, the influences of device structure, material parameters and operating conditions on the distributions of the equipotential line, current density, carrier concentration, optical field and temperature profiles have been investigated, and the interactions between the correlative characteristics have been studied at the same time
通過對這些相互關聯的特性進行數值計算，分析了器件結構、材料參數和工作條件等對等勢線分佈、注入有源區的電流密度、有源區中的載流子濃度、光場強度以及溫度分佈的影響，並研究了這些特性之間的相互影響。 -
Because quasi - fermi levels of a laser diode ( ld ) vary with the carrier density, it is predicted that a new type of hysteresis loop should occur for the current passing ld while a hysteresis loop appears on the power - frequency curve of the ecld. an explicit analytical expression for the frequency width of the hysteresis loop and the condition for the formation of the hysreresis loop has been deduced
預測了由於半導體激光二極體（ ld ）的準費米能級之差隨ld內線流子密度的變化而變化，因而，在調諧外腔半導體激光器的輸出功率?振蕩頻率曲線上出現雙穩環的時候，通過ld的電流也應出現一個伴隨的新型雙穩環? ?電流雙穩環。
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