carrier diffusion 中文意思是什麼

carrier diffusion 解釋
流子漫射
  • carrier : n 1 運送人，搬夫；負荷者；使役，〈美國〉信差，郵遞員；送報人；〈英國〉運輸行，運輸業者。2 傳書鴿...
  • diffusion : n. 1. 散布，發散。2. 傳播，普及。3. 冗長。4. 【化學】滲濾。5. 【物理學】擴散，漫射。
  1. The lateral diffusion of the photo - carrier in photoconductor layer is one of the important factors of affecting the resolution of lclv

    液晶光閥的解析度與許多因素有關，而光導層光生載流子的橫向擴散則是其中的重要因素之一。
  2. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。
  3. Medical microbiology - susceptibility testing of pathogens to antimicrobial agents - part 2 : active substance carriers for the agar diffusion test ; carrier loads and values required for drawing a standard curve

    醫療微生物學.病原細菌對殺菌劑敏感性的檢測.第2部分
  4. As one of the several models to improve the drift - diffusion model, the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model

    漂移擴散模型自上世紀五十年代初一出現，就得到了人們的廣泛關注。但隨著微電子技術的發展，它不能很好的解釋半導體中的有些現象，流體動力學模型就應運而生了。
  5. For low carrier-gas velocities the hetp may become large owing to molecular diffusion effects.

    載氣線速低時，HETP是靠分子擴展影響而變大。
  6. For low carrier - gas velocities the hetp may become large owing to molecular diffusion effects

    載氣線速低時， hetp是靠分子擴展影響而變大。
  7. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  8. Facilitated diffusion a passive transport of molecules across a cell membrane along a concentration gradient, mediated by carrier molecules or complexes, usually proteins

    易化擴散（促進擴散） ：分子沿濃度梯度由載體分子或復合物（通常是蛋白質）作為媒介的一種被動跨膜運輸。
  9. Electrochemistry c - v method was employed to measure the carrier concentration profile distribution of samples, discovered that the carrier concentration decreased with increasing of the diffusion depth, and the peak of concentration located at 0. 25 m beneath the surface

    利用電化學c - v法對樣品的載流子濃度的縱向分佈進行了研究，發現在距離樣品表面0 . 25 m處載流子濃度達到最大。
  10. It will be known from the obtained expression of the resolution of photoconductor that the column microstructure is benefit to reduce the carrier diffusion in the lateral direction and increase the resolution of the photoconductor

    這種各向異性的柱狀結構復合光導膜有利於減小光生載流子的橫向擴散長度，從而可以提高液晶光閥光導層的解析度。
  11. The principle and the application of liquid crystal light valve ( lclv ) and the development of the photoconductor of lclv have been reviewed in this paper. the growth mechanism of amorphous silicon film is analyzed. the resolution of the photoconductor that is affected by the lateral diffusion of the photo - carrier in photoconductor layer is also analyzed

    本文介紹了液晶光閥光導層的發展、液晶光閥的工作原理及應用，分析了非晶硅薄膜的生長機制以及載流子的橫向擴散對解析度的影響，詳細研究了nc - si a - si ： h柱狀結構復合光導層液晶光閥的制備工藝。
  12. The results showed that kp value increased with the increase of the initial concentration and ph value of the feed phase. the determined diffusion coefficient showed good agreement with the value that were calculated by the experiential equation given by castillo r. reactive extraction equilibrium constant kr increased with the increase of the initial concentration of the feed phase and the carrier concentration, while kr value increased slowly in the high initial concentration of the feed phase

    分配系數的研究結果表明，分配系數kp隨著料液苯酚濃度增大而增大，隨料液ph值增大而升高;採用多孔板法測定水相中苯酚的擴散系數，並將測定值與經驗公式估算值進行對比，結果表明，測定結果是可靠的;表觀反應萃取平衡常數kr隨著載體濃度升高而增大，隨著料液濃度的增加而增大，而在濃度較大時， kr增大趨勢變緩。
  13. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
  14. Medical microbiology ; methods for the determination of susceptibility of pathogens except mycobacteria to antimicrobial agents ; carrier of agents for agar diffusion test

    醫用微生物學.病原體分枝桿菌除外對抗菌素敏感性
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