chemical vapor deposition 中文意思是什麼

chemical vapor deposition 解釋
化學電鍍
  • chemical : adj 化學的，化學作用的；應用化學的，用化學方法獲得的。n 〈常 pl 〉化學製品；藥品。 fine chemicals...
  • vapor : n. 〈美國〉＝ vapour.
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  1. To overcome the bottle - neck, electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed

    為了解決這一問題，電子迴旋共振ecr等離子體增強有機金屬氣相沉積（ ecr - pemocvd ）應運而生。
  2. Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system

    本論文主要是對mw - ecrcvd系統沉積的a - si : h薄膜進行了一系列的光電特性的測試研究工作。
  3. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  4. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  5. The study showed that the effect of surface tension induced by the nanosize curvature of critical nuclei could drive metastable phase region of diamond nucleation in carbon diagram into stable phase region, consequently, for both of homogenous and heterogeneous nucleation processes, diamond nucleation would be prior to graphite nucleation in competing growth of diamond and graphite upon chemical vapor deposition ( cvd )

    研究表明，建立在碳的平衡相圖基礎上，在納米尺寸的金剛石臨界核的曲率誘導下的表面張力效應將金剛石成核的亞穩相區推進到穩定相區，因此無論對于金剛石的均勻氣相成核還是異質成核，在金剛石和石墨的競爭生長中，金剛石成核均優先於石墨成核。
  6. We suggest that regular tactic square shape with steps on the single crystal mgo and discontinuity of the au film may play an important role during the formation of regular arrays of gan nanorods. a new form of gan nanomaterial - nanotweezers has been obtained by chemical vapor deposition on the specially prepared cubic mgo ( 100 ) s

    Fe s 3 ： m ， edx ， xa12 ， tem和saed顯示：納米線是具有單斜晶系的屍gazo3單晶體，並且單根g七azo3納米線根植于ag催化劑島，形成了橋連于金屬催化劑島的納米線陣列。
  7. We analyzed the nucleation act of diamond in chemical vapor deposition ( cvd ) from the view of thermodynamics in the paper. a new nanothermodynamic approach was proposed, based on the established carbon thermodynamic equilibrium phase diagram

    本文從熱力學角度分析了化學氣相沉積（ cvd ）金剛石過程中，金剛石的成核行為，提出了一種新的金剛石的納米成核熱力學觀點。
  8. The activation includes air and carbon dioxide activation, and deposition includes chemical vapor deposition of benzene

    所採用的活化方法為空氣活化和二氧化碳活化法。沉積方法為苯沉積。
  9. In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed

    本工作採用蒙特卡羅（ monte - carlo ）計算機模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積（ eacvd ）金剛石薄膜中的氣相分解過程進行了研究，初步建立了eacvd氣相動力學模型，並討論了eacvd中的低溫沉積過程。
  10. Oriented growth of diamond film on si via plasma enhanced hot filament chemical vapor deposition

    等離子體增強熱絲化學氣相沉積法生長取向金剛石薄膜
  11. The diamond film is grown using a hot filament chemical vapor deposition, basing on the diamond micro - grits on silicon substrates

    實驗中外延金剛石薄膜採用熱絲cvd法生長，生長於事先電泳沉積在硅襯底的金剛石微粒上。
  12. Phase composition and surface morphology of tic coating by chemical vapor deposition

    塗層的相組成和表面形貌
  13. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  14. At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ), molecule beam epitaxy ( mbe ) as well as hvpe

    目前gan的外延生長技術一般採用有機金屬化學氣相外延法（ mocvd ） ，在藍寶石襯底的（ 0001 ）面上外延生長gan材料，另外還有分子束外延技術（ mbe ）及鹵化物汽相外延技術（ hvpe ）等。
  15. The influence of substrate materials on properies of primary diamond like carbon films prepared by direct photo chemical vapor deposition method

    襯底材料對直接光化學汽相淀積類金剛石碳膜成膜初期的影響
  16. In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )

    本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷；初步探討了金剛石薄膜生長的動力學過程；並採用輝光等離子體輔助化學氣相沉積（ cvd ）技術制備得到了n型金剛石薄膜。
  17. By the design of microwave electric field mode and microwave mode converter ( mmc ), the thesis participated in equipping an domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and water - cooled stainless steel resonant chamber in 2450mhz / 5 kw, introduced the basic machineries and functions of the sub - systems, including microwave system, gas - route system, vacuum system, detecting system and safeguard system

    論文通過微波場型和模式轉換器的設計，參與建立了一套2 . 45ghz 5kw帶有石英玻璃窗、水冷卻不銹鋼諧振腔的微波等離子體化學氣相沉積（ mpcvd ）系統（ mpcvd - 4型） 。論述了包括微波系統、氣路系統、真空系統、檢測系統和保障系統等結構的組成及基本功能。
  18. But there are still several problems concerning the stability and reproducibility of device fabrication. the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum

    本文還利用熱燈絲化學汽相沉積（ hfcvd ）法，採用硼酸三甲酯b （ ch3 ） 3為硼源制備了重摻雜p型金剛石膜，作為lppp / alq異質結增強型發光器的電極。
  19. Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )

    摘要以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎的多層量子井發光二極體結構。
  20. In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1

    本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。
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