crystal gain 中文意思是什麼

crystal gain 解釋
晶體放大系數
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • gain : vt 1 獲得；博得，掙得；贏得，打勝（戰爭、官司）。2 吸引；爭取…（到一邊），說服。3 （尤指通過努力...
  1. ( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed. theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented. and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields, a larger f can be achieved effectively than that obtained with no field applied

    由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，並且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。
  2. Firstly, we analyze the character of nd : yag, bbo and lbo, for nd : yag crystal and select the nd : yag as the gain medium and lbo as doubling - frequency crystal. ln the theory, analyzing the parameter of the gain medium length, the ratio of the pump - and laser - beam waists. based on the above analysis, we design the resonance cavity

    首先，我們對增益介質的性質和非線性晶體bbo和lbo的一些性質進行了比較，選取nd ： yag作為增益介質， lbo作為倍頻晶體。理論上分析了激光器設計中的一些參數值，如增益介質長度、模式交疊率、最佳倍頻條件，並根據理論分析結果設計了諧振腔。
  3. We presents a detailed studied of the linewidth of parametric light in clbo - opo caused by the linewidth of pumping beam, off axis phase matching, divergence angle of pumping, time above threshold, high gain coefficient of nlo crystal, fluctuate of cavitylength, spontaneous radiation, according to the momentum and energy conversion laws, and the sellmeier equations of the clbo, we calculated curves of the type - i and type - ii compared with the bbo ' s

    根據能量動量守恆關系和clbo的色散方程，詳細分析了由於泵浦光的線寬、泵浦光偏軸泵浦、泵浦光的發散角、泵浦光功率超過參量光振蕩閾值一定倍數、高增益系數、有效腔長波動以及自發輻射引起的參量光線寬，並得到了與bbo晶體在類、類相位匹配下比較的理論曲線。
  4. The system can generate sweep frequency signal with frequency range from 100khz to 150mhz and power range from - 40dbm to + 18dbm, and measure the gain and phase of the crystal. according to the gain and phase information and the iec - 444 standard, crystal parameters can be calculated, such as nominal frequency, series resistance, shunt capacitance, motion capacitance, motion inductance, q factor and so on

    該系統能產生頻率范圍達100khz 150mhz ，功率范圍為? 40dbm + 18dbm的掃頻信號，並能對晶振的增益和相位差進行測量，其測量結果按照iec - 444晶振測量標準進行實時處理和計算，從而得到晶振的串聯諧振頻率、並聯諧振頻率、等效電阻、靜態電容、動態電容、動態電感和品質因數等主要電參數。
  5. But for some special medium materials, such as liquid crystal display controller pcb, magnifiers must be used to gather images to gain enough precision of inspection for the weak contrast between the basic board and the conductor. the images near the light axes are much cleared than that far away from the light axes, so the images can not be simply segmented by black and white and inspected with the methods of pcb which are based on the black white image

    但對於一些特殊介質材料，如液晶顯示控制電路板的檢測，由於基板和導體之間對比度不大，而且為了達到檢測精度，必須採用放大鏡頭進行圖像採集，成像系統光軸附近的圖像成像質量較好，而偏離光軸較遠的圖像質量較差。不能通過簡單二值化來很好地分割圖像，而已有的印刷電路板檢測方法都是建立在二值圖像進行分析的基礎上。
  6. The signal generator of sweep frequency is based on dds device ad9954, the signal measuring circuit is based on gain and phase detector ad8302, the real - time control and deal circuit is based on tms320vc5409, and the periphery interface circuit is based on at89s52. the system can generate sweep frequency signal with the frequency range from 100khz to 150mhz, and with the power range from - 45dbm to + 18dbm. it can measure the gain and phase of the network, display the measure data by liquid crystal displayed and print it by the printer

    該測試儀以dds晶元ad9954為核心構成掃頻信號源電路，以增益相位檢測器ad8302為核心構成檢測電路，以dsp晶元tms320vc5409為核心構成控制與運算電路，以及以at89s52為核心構成外圍介面電路。該測試儀能產生頻率范圍達100k ~ 100mhz ，功率范圍為- 45dbm ~ + 18dbm的掃頻信號，能對被測網路的頻率特性進行測量，並留有豐富的外圍介面，可以將測量數據繪圖通過lcd顯示或者由印表機列印輸出。
  7. In the paper, the design of the real - time test system for crystal parameters is presented. the signal generator of sweep frequency based on dds device ad9852, the signal measuring circuit based on gain and phase detector ad8302, and the real - time control and deal circuit based on tms320vc5416 and the design of high - speed printed digital & analog circuit board are discussed in details

    本文闡述了晶振實時測量系統的設計，介紹了以dds晶元ad9852為核心的掃頻信號源電路，以增益相位檢測器ad8302為核心的信號檢測電路，以dsp晶元tms320vc5416為核心的實時控制與運算電路，以及高速數模混合電路板的設計方法。
  8. Research on gain of doped photonic crystal fiber with raman amplification of soliton

    準周期結構一維光子晶體的帶隙特性與濾波特性
  9. As to the paramagnetic ergag, the whole maganetization is zero. the crystal energy levels will split further when the magnetic field is parallel to the especial four directions. we - gain the according wave function and the magnetization changing with the magnetic field

    考慮了外磁場沿晶體四個方向磁化時，晶場能級的進一步劈裂以及得出了其相應的波函數，從而分析了不同磁化方向磁化強度隨外磁場的變化關系。
  10. When the pumped light was 300mw, we gain the green light about 5mw. the noise is lower than 2 % in 10 hours. an other time, we use nd : yv04 crystal and compensator firstly

    300mw的ld泵浦得到約5mw的綠光輸出，對激光器進行了10hour的連續監測，其輸出功率噪聲的不穩定性優於2 。
  11. In this thesis, we used the q - switched nd : yag laser pulse focused by lens to pump the cr ~ ( 4 + ) : mg _ 2sio _ 4 crystal, with the pump laser pulse duration and energy of 30ns and 50 mj separately, and got the laser pulse with center wavelength, pulse duration and energy of 1. 22 m, 8. 2 ns and 10 mj on the best work condition. on the base of zhangguowei s approximation about gain - switching and the parameter of cr ~ ( 4 + ) : mg _ 2sio _ 4 crystal, we calculated the time characteristics of cr ~ ( 4 + ) : mg _ 2sio _ 4 laser pulse with rate equation by numerical method, obtained the conclusion that the laser pulse duration is only related to the pump energy and cavity length : the larger the pump energy is, the narrower the pulse duration is ; the longer the cavity is, the wider the

    本論文採用調qnd : yag脈沖激光通過透鏡聚焦后縱向抽運cr ~ （ 4 + ） : mg _ 2sio _ 4晶體，抽運光脈沖寬度為30ns 、能量為50mj ，在較佳工作條件下得到了中心波長為1 . 22 m 、脈寬為8 . 2ns 、能量為10mj的激光脈沖;並在張國威分析增益開關時間特性的近似法基礎上，結合實際的cr ~ （ 4 + ） : mg _ 2sio _ 4激光器的相關參數，從速率方程出發，用數值計算的方法更為精確的模擬了cr ~ （ 4 + ） : mg _ 2sio _ 4激光器輸出激光脈沖的時間特性，得出了激光脈寬只與抽運能量、腔長有關的結論，即抽運能量愈大，脈寬越窄;腔長越長，脈寬則愈寬。
  12. The keys for laser crystal to grow in the same diameter are the diameter - measure system and control arithmetic, when crystal grow, the temperature is up to thousands of centigrade, and general diameter measure methods ca n ' t gain high precision, which will depress the total control effects

    在激光晶體生長等徑控制過程中，有兩個關鍵環節：測徑數據採集系統和控制演算法。晶體生長是在數千度的高溫下進行的，採用常規的測徑方法，精度不高，這將對整個系統的控制性能產生影響。
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