crystal growing 中文意思是什麼
crystal growing
解釋
晶體長大-
Here is the result, during yvo4 odd - crystal growing under cz method, while fusibility contain nature - convection by temp - grads and impose - convection by crystal - circumvolve, which make it difficult to growth large dimension odd - crystal
數值模擬的結果表明，在cz法生長yvo _ 4單晶過程中，由於熔體中存在著因溫度梯度引起的自然對流和晶體旋轉引起的強迫對流，使生長大尺寸單晶有著一定的困難。 -
Preparation of batio3 - cofe2o4 magnetoelectric ceramic with contronllable crystal and study in crystal growing - up mechanism
4磁電復合陶瓷制備及生長機制研究 -
The process of growing ktp crystal of high quality and low conductivity was studied. it was pointed out that many factors such as the uniformity of temperature distribution in the furnace, the accuracy of temperature control, the quality and direction of seed crystal and the speed of temperature drop all had an important influence on the quality of ktp crystal
研究了生長高光學質量、低電導率ktp晶體的工藝過程，指出晶體生長爐溫度場的均勻性、控溫精度、籽晶的質量和定向以及降溫速度的快慢對晶體的光學質量有著重要的影響。 -
The paper adopts weighing to measure the change of crystal diameter. in growing, the crystal is weighed in an interval t, by right of the relation between diameter and weight, diameter error is figured out
對晶體直徑變化的監測，本文採用上稱重的方法，在晶體生長時，以一定的時間間隔t ，稱取晶體的重量，利用晶體直徑與重量之間的函數關系，計算出直徑的變化量。 -
The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing, at reasonable cost, large diameter semi - insulating gaas has a use in the production of gaas integrated circuits, and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal
目前，液封直拉技術生長gaas單晶獲得了廣泛關注，因為它能夠以合理的成本生產大直徑的半絕緣單晶。半絕緣材料是生產集成電路等微電子器件的良好材料，而這種應用就要求整個晶片具有很高的均勻性。 -
When the substrate temperature is changed from room temperature to 550 and the gas pressure is varied from 0. 1pa to 30pa, the structures of zno thin films are c - axis oriented multi - crystalline. the landscape orientation growing speed of crystal grains is controlled mainly by depositing speed of zn and o atoms, while c - axis developing speed is chiefly dominated by depositing speed and activity of zn and o atoms
Sb _ 2o _ 3摻雜zno薄膜中sb以替位原子及化合物（ sb _ 2o _ 3和zn7sb2o12 ）等形式存在， zno呈混晶方式生長;摻雜薄膜在遠紫外波段的吸收顯著增強，吸收邊變得陡峭且向短波方向移動達5nm ，在可見光波段的吸收有所增強。 -
Monte carlo simulation method in the growing process of crystal particles
晶粒生長過程的蒙特卡羅模擬方法 -
With more than twenty five years efforts and cultivation in target market, our yearly sales revenue has grown significantly. our product lines include more than 20 prestigious brand names such as agere, citel, clare, crystalmedia, generalsoft, jennic, kionix, legerity, micro crystal, perkinelmer, richtek, tda and so on. the number of vendor is still growing
幸賀現有的代理線包括agere citel clare crystalmedia generalsoft jennic kionix legerity micro crystal perkinelmer richtek tda等重量級廠商，以及其他涵蓋相機手機有線及無線通訊產品電腦醫療器材數位家庭感應器軟體以及消費性電子產品的先進技術廠商，共計20餘家業者，且數量還在持續增加中。 -
The measure of grains " comminution is brought forward to improve plasticity at room temperature. the key of micro - crystal ' s production is that the time of sample ' s being at high temperature is shorter. the process of crystal ' s growing up will be restrained
提出了通過細化晶粒來提高室溫塑性的措施，指出了細化晶粒的關鍵是在合成過程中使坯料處在高溫狀態的時間短，以抑制晶粒的長大過程。 -
It was showed that the basic varying law of graphite morphologies is as follows : with increasing of growing rate of graphite crystal along direction of [ 0001 ], the morphologies of graphite change from flack shape vermicular shape spheroidal shape explosive shape superspheroidal shape
研究得出，鑄鐵中石墨變態的基本規律是：隨著石墨晶體沿[ 0001 ]方向生長速度的增加，石墨由片狀石墨蠕蟲狀石墨球狀石墨開花狀石墨過球化石墨。 -
The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface
結果表明：材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素，採用改進的富鎘氣氛下坩鍋旋轉下降法生長的晶體具有較低的缺陷濃度，適合製作探測器，採用au 、 c可得到歐姆接觸。 -
Crystal growing furnace
晶體生長爐 -
In this study, we discussed the drive force and mechanism of growing ktp crystal, studied the influence of doping elements on the habits of crystal growth, described and explained its morphology
本文討論了ktp晶體生長的驅動力和生長機制，研究了摻質對ktp晶體生長習性的影響，並對其形貌進行了描述和理論上的解釋。 -
We article reviewed craftwork characteristic of growth yvo4 crystal by means of czochralski - cz. according to method of fimty - difference, we compiled field quantity estimate program ( fqep ) with vc + + that we can numerical simulate temperate - field and velocity - field while yvo4 dual - refractive optics crystal is growing
本文對丘克拉斯基（ czochralskicz ）法生長yvo _ 4晶體的工藝特點進行了評述，根據有限差分的方法，用vc + +語言編寫了場量計算程序，對yvo _ 4雙折射光學晶體生長過程中的溫度場和速度場進行了數值模擬。 -
As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped
眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。 -
A key step to control the size and shape of the growing particle is dynamically to coat the particles with a closed - packed monolayer of coordinating ligand, mercaptosuccinic acid ( msa ). suitable large size nanoparticles ( several tens nanometer ) and nanorods have been made. after size selection, a certain size nanoparticles were assembled into micrometer sizable super lattice crystal
制得的金納米粒子再經過粒經篩選，得到粒徑一定的納米粒子，然後，將其溶解成一定濃度的溶液，並加入一定量的濃鹽酸，製成微米級的自組織結晶體。 -
A construction mystery of snowflakes is the average hexagonal shape, which may contain as many as 100 million or more water molecules. in certain conditions, the growing process proceeds in both perfectly horizontal and perpendicular directions, thus building a broader and thicker crystal in hexagonal symmetry
它那巧奪天工的六角體成為了雪花生長的奧秘，每個雪花有著至少上億個水分子，冰晶就是從水平和垂直的方向，生長成更大更厚的晶體了 -
Crystal growing equipment
單結晶製造設備 -
Study on stability of reaction cell container material when growing large crystal diamond under hpht
寶石級金剛石合成用反應容器材料穩定性研究
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