crystalline silicon 中文意思是什麼

crystalline silicon 解釋
晶體硅
  • crystalline : adj. 水晶的,由水晶做成的;結晶的,【化、礦】結晶質的;透明的。n. 結晶質,結晶體,晶態;(眼球)水晶體。
  • silicon : n. = silicium
  1. Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target

    本文研究用脈沖激光燒蝕石墨靶方法在單晶硅、 k9玻璃等襯底上生長超硬非晶碳膜。
  2. Crystalline silicon photovoltaic array - on - site measurement of i - v characteristics

    晶體硅光伏pv方陣i - v特性的現場測量
  3. Strange features of nano crystalline silicon diode

    納米硅二極體的獨特性能
  4. Preparing anti - reflective coating and hydrogen passivation are two key procedures in the process of high efficiency crystalline silicon solar cells

    減反射膜的制備和氫鈍化是制備高效率的晶體硅太陽電池的非常重要工序之一。
  5. It is described that the innovatory technology of selective diffusion and study on surface passivation in theory for crystalline silicon solar cell

    本文的主要內容是介紹晶體硅太陽電池選擇性擴散新工藝和表面鈍化的理論研究。
  6. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式;研究得到了減反射膜對太陽電池短路電流增量比的極限;建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  7. In chapter 2, the breaking strength of the crystalline silicon was studied through the micro force - displacement balance

    第二章講述了單晶硅的破壞強度問題,並用微力微位移天平方法進行研究。
  8. Crystalline silicon terrestrial photovoltaic modules - design qualification and type approval

    地面用晶體硅光伏組件設計鑒定和定型
  9. Crystalline silicon terrestrial photovoltaic modules - design qualification and type approval iec 61215 : 2005 ; german version en 61215 : 2005

    地面用晶體硅光伏組件.設計鑒定和定型
  10. Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices

    晶體硅光伏器件的i v實測特性的溫度和輻照度修正方法
  11. Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices iec 60891 : 1987 a1 : 1992 ; german version en 60891 : 1994

    晶體硅光伏器件實測電流電壓特性的溫度和輻照度修正
  12. Solar cells - part 1 : datasheet informations and product data for crystalline silicon solar cells

    太陽能電池.第1部分:晶體硅太陽能電池的數據表單信息
  13. Crystalline silicon solar cells work well and are successfully used in the space program, where cost is not an issue

    晶體硅太陽能電池在宇航計劃上得到成功應用,因為在這類項目中,成本不成問題。
  14. Crystalline silicon solar cells cost in excess of 100 per square foot, but amorphous films can be created at a cost of about 50 cents per square foot

    晶體硅太陽能電池每平方英尺造價超過1美元,而非晶形膜每平方英尺造價只有50美分。
  15. Currently, more than 80 % solar cells are made from crystalline silicon, so it is very important to develop high efficiency and low cost crystalline silicon solar cells

    目前, 80以上的太陽電池是由晶體硅材料制備而成的,制備高效率低成本的晶體硅太陽能電池對于大規模利用太陽能發電有著十分重要的意義。
  16. Our requirement of the specification for the crystalline silicon solar battery material is following : silicon doped in all of materials must be not less than 99. 9999 %

    大家好!我公司長期采購各類廢硅料,如果您或您的公司有,請聯系我!因為我公司是生產廠家需要長期供貨!謝謝!
  17. Preparation technology and status of research on crystalline silicon thin film solar cells

    晶體硅薄膜電池制備技術及研究現狀
  18. Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline silicon materials

    多孔硅( ps )是近年來發展起來的一種新型硅基材料,具有與單晶硅材料大不相同的特性。
  19. In comparison with traditional research tools, sirm has advantages of direct observation of defects or precipitates in crystalline silicon and no destruction to specimens

    與傳統研究手段相比,紅外掃描儀不僅可以直接觀察到體內的缺陷或沉澱,而且不會破壞樣品。
  20. The distribution or the morphology of grain boundaries, dislocations and precipitates in crystalline silicon were observed by scanning infrared microscopy ( sirm ), and much useful information was obtained

    通過紅外掃描儀觀察晶體矽中的晶界、位錯和不同金屬沉澱的分佈和形貌,並分析其相關信息。
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