crystalline temperature 中文意思是什麼
crystalline temperature
解釋
結晶點- crystalline : adj. 水晶的，由水晶做成的；結晶的，【化、礦】結晶質的；透明的。n. 結晶質，結晶體，晶態；（眼球）水晶體。
- temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
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There are three crystalline phases for tio2, including rutile. anatase and brookite. transformation of crystalline phase occurs at a certain temperature and pressure
Tio _ 2具有金紅石、銳鈦礦和板鈦礦三種晶體結構，在一定溫度和壓力下可發生晶體結構的轉變。 -
Crystalline substances, such as ice, or a metal, melt at a definite temperature.
象冰或金屬等結晶物質，則是在一定溫度下才發生溶解。 -
The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。 -
The crystallization and melting behavior of mellocene - catalized branched and linear polyethylenes of low molecular weight was studied. it was found that the crystalline lattice of branched polyethylene is larger than that of linear polyethylene because of the existence of branched chains. the melting behavior of branched polyethylene is similar to that of linear polyethylene since the branched chains can not enter the lattice. however, the crystalline behavior of low molecular weight branched polyethylene is the same as that of high molecular weight linear polyethylene, but different with that of low molecular weigh linear polyethylene. kinetics theory analysis evidenced that the transition temperature of growth regime of the branched polyethylene is about 20 lower than that of linear polyethylene with the same molecular weight. it may be attributed to the existence of short branched chains
研究了金屬茂催化的低分子量支化聚乙烯和線性聚乙烯的結晶及熔融行為，發現支化聚乙烯的結構與線性聚乙烯相同為正交結構，但晶格略有膨脹.支鏈的存在對熔融行為影響不大，兩種聚乙烯的熔點均隨結晶溫度的升高而非線性增加，表現出低分子量樣品的共同特徵.但支鏈的存在對結晶行為卻有很大的影響，主要是由於支鏈的存在降低了晶體的結晶速率從而影響結晶過程，使得低分子量的支化聚乙烯的結晶行為與高分子量線性聚乙烯的結晶行為相似而與低分子量的線性聚乙烯不同.動力學分析表明，低分子量的支化聚乙烯的結晶生長方式的轉變溫度比同等分子量的線性聚乙烯降低了約20 -
The growing rate of crystalline show powerful relationship to the temperature
這是因為晶粒長大速率與溫度呈指數關系的緣故。 -
Temperature coefficient measuring methods of output voltage and output current for crystalline solar cells and modules
晶狀太陽能電池和模塊的輸出電壓和輸出電流溫度系數的測量方法 -
Plastics - determination of melting behaviour melting temperature or melting range of semi - crystalline polymers by capillary tube and polarizing - microscope methods
塑料.用毛細管和偏振顯微鏡法測定半晶狀聚合物的熔化性能 -
Measuring method of equivalent cell temperature for crystalline solar cells by the open - circuit voltage
採用空載電壓的晶體太陽能電池等效電池溫度的測量方法 -
When the substrate temperature is changed from room temperature to 550 and the gas pressure is varied from 0. 1pa to 30pa, the structures of zno thin films are c - axis oriented multi - crystalline. the landscape orientation growing speed of crystal grains is controlled mainly by depositing speed of zn and o atoms, while c - axis developing speed is chiefly dominated by depositing speed and activity of zn and o atoms
Sb _ 2o _ 3摻雜zno薄膜中sb以替位原子及化合物（ sb _ 2o _ 3和zn7sb2o12 ）等形式存在， zno呈混晶方式生長;摻雜薄膜在遠紫外波段的吸收顯著增強，吸收邊變得陡峭且向短波方向移動達5nm ，在可見光波段的吸收有所增強。 -
The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature, and the crystalline v2o5 films can be obtained by deposition at > 300. these films showed excellent cathode and anodic electrochromic performance at different wavelength region
而襯底溫度升高促進薄膜晶體顆粒長大、熔結，晶粒邊界消失，在較高襯底溫度（ 300 400 ） ，得到連續的結晶性能良好的v _ 2o _ 5薄膜。 -
By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。 -
Study on the peaks linked to the crystalline of l - la with variable temperature ftir spectra method
正項級數的一個新的判斂法 -
The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely
（ 2 ）常溫下制備的tio _ 2薄膜是無定型的， 300濺射薄膜表面有緻密的晶粒，熱處理溫度升高，晶粒變大，晶相開始轉化， 800退火tio _ 2完全轉化為金紅石結構。 -
Using continuous compacting progress dy2o3 / zro2 materials can be sintered at low temperature. 98. 8 % of theory density was obtained for ultrafine dy2o3 / zro2 ceramic power sintering at 1200, which is 400 lower than the sintering temperature of the common ceramic power. it studied the influence of sintering temperature on the crystalline grain of power by sem
採用二次成型常壓燒結法對氧化鋯/氧化鏑的納米粉體進行燒結，在1200左右燒結得到燒結密度為理論密度的98 . 8的陶瓷體，其燒結溫度比常規陶瓷粉末的燒結溫度低四百度左右，通過掃描電鏡研究了燒結溫度對燒結體晶粒大小的影響。 -
The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced
實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。 -
Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices
晶體硅光伏器件的i v實測特性的溫度和輻照度修正方法 -
Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices iec 60891 : 1987 a1 : 1992 ; german version en 60891 : 1994
晶體硅光伏器件實測電流電壓特性的溫度和輻照度修正 -
A synthetic liquid crystalline compound was studied by means of variable - temperature ft - ir spectroscopy
摘要對合成的液晶化合物進行變溫紅外光譜研究。 -
For the crystalline polymer matrix, the ptc transition temperature is close to the melting point, while for the amorphous polymer matrix, the ptc transition temperature is close to the glass transition temperature
Ptc轉變溫度與體積膨脹的轉變溫度非常一致，對于結晶聚合物基體體系， ptc轉變溫度在基體的熔點附近，而對于非晶聚合物基體體系， ptc轉變溫度在基體的玻璃化轉變溫度附近。 -
The equipment for simultaneously measuring resistance, volume expansion and temperature was constructed. two different polymer matrices, crystalline high density polyethylene ( hdpe ) and amorphous polystyrene ( ps ) were selected, which were loaded with carbon black ( cb )
自行設計製作電阻-體積膨脹-溫度同步測量裝置，研究了炭黑（ cb ）填充聚合物基ptc材料的電阻率隨體積膨脹的變化關系，聚合物基體分別為結晶聚合物高密度聚乙烯（ hdpe ）和非晶聚合物聚苯乙烯（ ps ） 。
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