crystallization power 中文意思是什麼

crystallization power 解釋
結晶本領
  • crystallization : n. 晶化，結晶（作用，過程）；結晶體；具體化，明朗化。
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  1. Through the relationship between sodium chloride and target crystal : calcium hypochlorite hydrate, the recycle of mother liquid, the principle of reactive crystallization of sodium - process bleaching power was analyzed

    從氯化鈉與目標晶體水合次氫酸鈣間的關系、母液循環等角度分析了鈉法漂粉精工藝的反應結晶原理。
  2. This paper mainly study on the technics of preparing nano - si3n4 and icpecvd. seeking for the proper parameter and technics, crystallization of nano - si3n4 powder with muffle furnace, probe the new effective way of improving the properties of nano - si3n4 powder the ion density in the reaction chamber was diagnosed by a langmuir probe. the rules were obtained under different air pressure, different radio frequency power and different position which the ion density changes about from 1010cm - 3 to 1010cm - 3 decreasing as the pressure increases and increasing as the power decreases

    利用朗繆爾探針診斷了反應室內等離子體參數，得到不同位置、不同功率和不同氣壓下等離子體密度的變化規律，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，等離子體密度隨著功率的增大而增大，隨著氣壓的升高而減小，由於離子鞘層的存在，在一定條件下提供了局部等離子體密度穩定的區域。
  3. The variable polarity power supply circuit uses two stages full - bridge inverter, the former inverter is regarded as a constant - current source with fast dynamic response, and supplys energy for the second one, and the latter one is to produce variable polarity current excellently, and low - frequency pulse current by variable polarity power supply is used to reduce input energy and control the shape of weld bead while welding. a series of high - frequency pulse current is superposed on direct - current - electrode - negative ( dcen ) current through the high - frequency pulse power supply, which is used to compress the arc and improve process of crystallization

    其中變極性電源採用二次全橋逆變結構，一次逆變提供快速的響應速率並給二次逆變提供能量，二次逆變提供良好的變極性性能，使輸出能量最優化，並用其低頻電流特性減小電弧線能量，控制焊縫成形;高頻脈沖電源提供的高頻電流疊加在反極性電流dcen上，利用電流的高頻特性壓縮電弧，改善焊縫金屬結晶過程。
  4. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  5. I find that the crystallization performance is the best at laser power density 300mj / cm2. it means crystallization degree is the best, grains are the most uniformity and film stress is the least

    實驗發現在能量密度為300mj cm ~ 2時晶化性能較好，即晶化度最高，晶粒最大且均勻，薄膜應力最小。
  6. Because p - si is of more special characteristics, comparing to a - si and c - si, firstly, i set forth electrical features of p - si film and acknowledge profoundly electrical mechanism of p - si film. then three parameters of laser annealing, including laser frequency -, accepted - pulse - times and laser power density are studied how to influence crystallization of p - si

    因為多晶硅和非晶硅及晶體硅相比具有更獨特的特點，所以我們先闡述了多晶硅薄膜的電學特點，對多晶硅的導電機理有了深刻的了解；然後研究了激光頻率、受光次數和激光功率密度三個參數對晶化多晶硅的影響。
分享友人
分享到 Line

分享到臉書