cubic semiconductor 中文意思是什麼

cubic semiconductor 解釋
立方晶格半導體
  • cubic : adj. 1. 立方體[形]的，正六面體的。2. 【數學】三次的，立方的。n. 【數學】三次曲線；三次方程式；三次多項式；三次函數。
  • semiconductor : n. 【物理學】半導體。
  1. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  2. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  3. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  4. One dimension cubic finite volume methods and analysis for the transient behavior of a semiconductor device

    半導體瞬態問題的一維三次有限體積方法及分析
  5. Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion

    硅摻雜半導體立方氮化硼單晶的制備
  6. Xrd reveals a mixture structure of the face - centered cubic and hexagonal close - packed phases. the sn doped makes the electrical conductivity change from insulator to n - type semiconductor

    用共蒸發法制備摻錫的c60薄膜，發現摻入的sn原子的薄膜導電性由原來的絕緣體變為n型半導體。
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