cyclotron resonance 中文意思是什麼

cyclotron resonance 解釋
徊旋共振。

  • cyclotron : n. 【物理學】徊旋加速器。
  • resonance : n 1 回聲，反響；【物理學】共鳴，共振；【無線電】（波長的）調諧。2 【化學】中介（現象）。3 【醫學...
  1. Ion cyclotron resonance mass spectrometer ; icr mass spectrometer

    離子迴旋共振質譜計
  2. Fouier transform ion cyclotron resonance mass spertrometer ft - icr - ms

    傅立葉變換離子迴旋共振質譜計
  3. Cyclotron resonance mass spectrometer

    迴旋共振質譜計
  4. Cyclotron resonance heating

    迴旋共振加熱
  5. Ion cyclotron resonance

    離子迴旋共振
  6. Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma

    等離子體對硅表面的低溫大面積氮化
  7. To overcome the bottle - neck, electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed

    為了解決這一問題，電子迴旋共振ecr等離子體增強有機金屬氣相沉積（ ecr - pemocvd ）應運而生。
  8. Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication, such as plasma etching and films deposition

    本論文介紹了我們對ecr等離子體cvd系統的測試、 bn薄膜的制備和薄膜光學特性研究。
  9. Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave

    摘要採用微波電子迴旋共振等離子體反應離子刻蝕（ ecr - rie ）裝置對氂牛毛纖維進行表面改性，從而改善氂牛毛的可紡性。
  10. Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system

    本論文主要是對mw - ecrcvd系統沉積的a - si : h薄膜進行了一系列的光電特性的測試研究工作。
  11. The magnetic field requirement of the sth harmonic gyroklystrons over cyclotron resonance masers ( crms ) would be reduced by a factor of s relative to operate on the fundamental cyclotron frequency, so that the amplifier could be applied to highly mobile millimeter wave radar systems

    基於電子迴旋諧振脈塞原理工作的諧波迴旋速調放大器的工作磁場強度是基波的1 / s （ s是諧波數） ，因而能適用於機動性較高的軍用毫米波雷達系統。
  12. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
  13. Therefore, the diagnostics of electrical and optical characteristic of plasma form the basic respects of plasma diagnostics. the author reports in detail in the dissertation the experimental investigation on the phenomena of some common discharge systems at typical operation status such as dc glow ; rf ( radio frequency ) glow and microwave ecr ( electron cyclotron resonance ) discharge

    創新之處： （ 1 ）提出了雙原子分子轉動分辨發射光譜的擬合方法，並利用擬合方法進行了氮氣直流輝光放電產生的第一負帶轉動分辨光譜和磁控濺射沉積cnx膜過程中cn基團的振動帶的轉動線型擬合，獲得了相應的轉動溫度。
  14. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
  15. But the deposition rate and quality of a - si : h was primarily affected by preparation methods. recently, the microwave electron cyclotron resonance ( mwecr ) cvd method was weightily studied

    為了獲得高速沉積下的高品質a - si : h薄膜，使其能夠產業化，微波電子迴旋共振化學氣相沉積（ mwecrcvd ）方法在國際上受到了人們廣泛的重視。
  16. In view of its virtue of high degree of electron and ion generations, the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate

    鑒于微波電子迴旋共振化學氣相沉積（ mwecrcvd ）系統具有電子和離子產生率高等優點，人們期望它能在較高的沉積速率下獲得器件級質量的a - si ： h薄膜。
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