density profile 中文意思是什麼
density profile
解釋
密度分布圖-
The coefficient of variation of saturated water content decreased with the depth of profile. the coefficient of variation of bulk density and field capacity fluctuate with depth of soil
飽和含水量的變異系數都隨深度的增加逐漸降低，含水量、容重和田悶持水量的變異系數隨深度的呈波動變化。 -
Some by - products of this work can be used as routine tools in the uv laser laboratory. commercial video ccd cameras are used to image uv laser and soft x rays, window glass as a fluorescer is used to indirectly measure the uv laser beam profile with high energy density, and a special glass which permits uv light to pass through while absorbs the visible, is introduced into the uv beam profiling in strong visible stray light environment
實驗中發展了一些測量技術，例如用可見光視頻ccd直接測量紫外激光的光束分佈和激光等離子體產生的x光二維圖象，利用窗玻璃作為熒光體測量能量密度較高的紫外光束分佈，利用可見吸收紫外透射玻璃製成的衰減器測量有嚴重背景光的紫外光束分佈，可以作為實驗室的常規測量工具，並有一定的推廣價值。 -
The probe was equipped with a radio occultation experiment to profile atmospheric density
我的理解是:探測器裝備有一個用於探測大氣層密度的掩星實驗裝置 -
Therefore, in principle the scattering may be predicted from measurements of the surface profile. in this paper the author also discussed nonspecular scattering for mo / si multlayer coated primary and secondary mirrors of the measured schwarzschlid optics based on power spectral density of these mirrors measured by both optical profilometer ( wyko ) and atomic force microscopy ( afm )
因此，我們可以通過檢測多層膜反射鏡基底的粗糙度來表徵多層膜反射鏡非鏡面散射對光學系統性能的影響，亦即通過檢測多層膜反射鏡基底的粗糙度調整拋光工藝參數，獲得低散射的多層膜反射鏡。 -
Fasting lipid profile high density lipoproteins, low density lipoproteins, triglycerides, total cholesterol
高低密度膽固醇、三酸甘油脂、總膽固醇 -
In this paper, high - order accurate weighted essentially non - oscillatory ( weno ) schemes are investigated and their applications in hyperbolic conservation laws are discussed. based on this, a new weno difference scheme which based on dispersion - relation - preserving relation is developed, and representative test cases with this scheme for computational aeroacoustics ( caa ) problems has been implemented and compared in order to test capability of wave capturing ; in addition, weno schemes generally do not converge at high order in the presence of contact discontinuity of euler equations, so a conservative front tracking technique coupling weno schemes and level set method to simulate the translating density profile is presented here, and numerical simulation with this technique for representative test case has been implemented and results show the desired accuracy
本文研究了高階精度加權基本無振蕩（ weno ）格式及其在雙曲守恆律方程中的應用，在此基礎上作了兩個方面的工作：一是針對高頻聲波問題構造出一種基於保色散關系（ drp ）的weno有限差分格式，並對計算氣動聲學（ caa ）問題的代表性算例進行了大量數值實驗，比較了該格式捕捉波數的能力；另外，針對高階weno格式在處理euler方程的接觸間斷時精度有所降低的問題，研究了利用界面追蹤技術levelset方法和高階激波捕捉weno格式相結合的一種守恆追蹤方法，並且給出有代表性的密度滑移面問題的算例，得到一致高階精度的數值模擬結果。 -
Projected density profile
投影密度輪廓 -
Space density profile
空間密度輪廓 -
Number density profile
數密度輪廓 -
Standard test method for obtaining char density profile of ablative materials by machining and weighing
用機械加工法和稱重法獲得燒蝕材料炭密度縱面圖的試驗方法 -
Our results are much helpful for us to understand the building - up mechanism of the universal density profile, galaxy formation and high redshift tully - fisher relation
這些結果對我們解釋暗暈的普適密度輪廓，高紅移盤星系的瓜111卜f討ler關系和理解星系核球及盤的形成都有很大幫助 -
However, the speed of penetration is equal to predicted value by fluid theory only in c + + plasma with uniform density profile. on other conditions, strong two - dimensional effects, electrostatic accelerating, magnetic pressure and plasma pressure should be included in the fluid analysis
不過，值得注意的是僅有均勻分佈的c ~ （ + + ）等離子體條件下，磁場滲透速度與簡化流體理論分析結果基本相同，而其它條件下的磁場滲透速度均與理論結果存在一定的差異。 -
In the course of the computation, the basic parameters of the atmosphere status of the examples, such as air density profile, temperature profile, relative humidity profile, were compared and further analyzed. the results were showed by means of data forms and curves, which reflect the basic status of the actual atmosphere clearly and detailedly
在計算過程中，對各樣點的大氣狀況的基本參數，如空氣密度廓線、溫度廓線、比濕廓線進行了比較和分析，並將計算結果以數據表格和曲線的形式列出，較為清楚、詳細的反映了實時大氣的基本狀況。 -
The scaling relations of conduction time and opening time with the plasma density, which are computed by a series of simulation results, show that, influence of plasma density on conduction time is greater than opening time. influence of cathode em itted electrons on conduction process, which is found to be more important when initial plasma density is low, is dependent of the initial plasma density. the penetration of a magnetic field into cylindrical middle - density ( 1013 / cm3 ) c + + and h + plasma with uniform and parabolic density profile, are examined with aid of pic simulation
模擬得到的低密度（ 10 ~ （ 11 ） cm ~ 3 10 ~ （ 13 ） cm ~ 3 ）條件下導通和斷路時間與等離子體密度的定標關系曲線顯示：密度對于導通時間的影響遠大於對于斷路時間的影響；陰極電子對于peos導通過程的影響程度與初始等離子體密度有關，初始密度越大，陰極電子的影響就越小。 -
In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask
在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。 -
It is found that the fwm field can cause the asymmetry of electromagnetically induce transparency profile. in addition, the effect of different propagating orientations of probe field on the electromagnetically induced transparency is also discussed. in the molecular multi - level system with the perturbed superposition levels, we discuss the electromagnetically induced transparency, spontaneous emission enhancement, double dark resonance and double electromagnetically induced transparency by using the density matrix equation under weisskopf - winger approximation and dressed - state density matrix equation
針對實際的實驗條件，考慮了一種影響量子干涉的新的因素-四波混頻場，研究了四波混頻場對雙光子探測的-型能級體系的eit的影響，發現四波混頻場能夠導致雙光子探測的eit線型的不對稱，在此基礎上，討論了不同探測場的傳播方式對eit的影響，針對分子中實際存在的包含有微擾能級的不同多能級系統，我們分別採用綴飾態繪景下的密度矩陣方程和weisskopf - wigner近似下的密度矩陣方程詳細地討論了電磁感應透明、自發輻射的干涉相消和相長、雙暗態共振和雙電磁感應透明現象。 -
Ict can clearly, directly and accurately show us the structure, density change, character of a absence, position and size of measured profile by computer image
工業ct能以計算機圖象的形式，清晰、直觀、準確地呈現被測物體斷面內部的結構、密度變化以及缺陷的性質、位置及大小。 -
The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。 -
In single crook we change the density of charge in crook to adjust the velocity profile
電滲驅動下彎道引起的彎道內外徑速度差可以通過改變彎道形狀和電滲強度的方法進行改善。 -
In the relatively high dislocation density areas, dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure. here the profile of c concentration in the dimension of a cellular structure is " u " - shaped. the cell diameter increases as the dislocation density decreases, dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure
發現晶片中位錯密度和分佈嚴重影響碳的微區分佈，高密度位錯區，位錯形成較小的胞狀結構，胞內無孤立位錯，碳在單個胞內呈u型分佈；較低密度位錯區，胞狀結構直徑較大，胞內存在孤立位錯，碳在單個胞內呈w型分佈。
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