deposition target 中文意思是什麼

deposition target 解釋
淀積靶
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  • target : n 靶子，標的；目標；（嘲笑等的）對象；笑柄 （for）; （儲蓄，貿易等的）定額，指標；小羊的頸胸肉；...
  1. The effect of deposition parameters on cdse target performances of fpc tube

    靶面淀積參數對攝像特性的影響
  2. For liquid xe aerosol spray target, important lpp characteristics, such as laser - to - euv conversion efficiency, euv radiation absorption, debris production by target material erosion or deposition, are studied in detail, a 13. 4nm conversion efficiency of 0. 75 % into 2 % bandwidth and 2 steradian emission solid angle is achieved at 0. 5mm laser - nozzle distance

    在實驗上，建成了一套高光譜解析度和高靈敏度的軟x射線脈沖輻射測量裝置。測量了co _ 2 、 o _ 2 、 cf _ 4 、 kr和xe液體微滴噴射靶lpp光源在6 20nm波段的軟x射線輻射光譜。
  3. According to the demand of the concept design of china spallation neutron source ( csns ), the target station, i. e. the target, the reflector and the moderator have been simulated and optimized using monte carlo simulation software, nmtc / jam and mcnp4a, firstly. the neutron flux escaping from the target and the moderator and the heat deposition in the target, the reflector and the moderator are calculated. these results provided essential data as a basis of the spallation neutron source design

    本論文結合當前中國散裂中子源（ chinaspallationneutronsource ， csns ）工程概念設計的迫切需要，選擇國際上廣泛使用的基於蒙特?卡羅方法，用於模擬粒子輸運過程的程序mcnp4a和nmtc jam作為研究工具，首次對csns靶站進行了全面的模擬與優化，內容包括靶、反射體與慢化器系統的中子通量分佈以及熱量沉積，同時計算了靶的溫度場與應力場分佈。
  4. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  5. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  6. By means of pld, it is easy to achieve ingredient homology between film and target. moreover, the deposition experiment condition is easy to control with a high deposition rate, a short deposition cycle and a wide application

    Pld是制備薄膜的最好方法之一， pld制備薄膜具有膜成分容易做到與靶成分一致，沉積條件容易控制、沉積速率高、實驗周期短、應用范圍大的特點。
  7. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。
  8. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films owing to its high deposition rate and good uniformity etc. in my experiment, zao films were prepared by dc magnetron sputtering in pure argon gas atmosphere using zno target mixed with al2o3 ( lwt %, 2wt %, 3wt %, 4wt % respectively ) and the films were figured by xrd, sem, xps, afm and ftir, uv photometer

    本研究課題以氧化鋅鋁靶為靶材，採用直流磁控濺射工藝在純氬氣氣氛中沉積zao薄膜。靶材中al _ 2o _ 3的摻雜比例分別為1 、 2 、 3 、 4 。用xrd 、 sem 、 xps 、 afm和紅外、紫外分光光度計等測試手段對沉積的薄膜進行了表徵。
  9. Further measurements for the deposited films indicate that the appearance and the deposition rate of the films also vary. after we simulate the magnetic field in such case with c program, these variations are owed to distributed change of magnetic field near the target surface and in the discharging space, which can influence the motion of charged particles in the plasma obviously

    進一步對沉積薄膜的測量表明，薄膜的沉積速率等發生了變化，通過對空間磁場進行模擬計算發現，由於空間外加的縱向磁場引起了放電空間中以及靶面附近磁場分佈的改變，影響了等離子體中帶電粒子的運動並最終導致了上述變化。
  10. The results show that the heat deposition hi the target for setting up lookw - level spallation neutron source is not a serious obstacle

    由於csns是千瓦級的散裂中子源，所以溫度與熱應力都不會對靶的壽命、機械性能產生太大影響。
  11. The sto, ybco and sto / ybco thin films were deposited on laalo3 ( 001 ) ( lao ) substrate by pulsed laser deposition ( pld ). the effects of deposition parameters, such as the substrate temperature, the of target - substrate distance, laser energy density, on the properties of the thin fillms were systematically studied. the surface morphology of the thin films was investigated by atomic force microscopy ( afm ) and scanning electron microscopy ( sem )

    採用脈沖激光沉積技術在laalo3 （ 001 ） （ lao ）基片上生長ybco 、 sto以及sto / ybco集成薄膜，系統研究了基片溫度、基片表面狀態、氧分壓、激光能量密度、脈沖重復頻率等工藝參數對薄膜表面性能、結晶情況的影響，優化了ybco 、 sto薄膜生長的工藝參數，運用afm 、 sem 、 xrd等分析手段表徵薄膜的微觀性能，分析結果表明：薄膜表面平整、結晶良好、 c軸織構。
  12. It was found that the thin films and target were of similar composition. the optimal deposition temperature was 150 - 200 and the tcr of thin films were strongly influenced by the target temperature

    發現磁控濺射法可以沉積得到與靶材組分一致的錳銅薄膜，沉積的最佳溫度為150 200 』 c ，並且陰極靶的溫度對薄膜tcr有很大的影響。
  13. The experimental results show that dlc film could be deposited on silicon substrate rapidly and uniformly in a large area by means of ablated plasma jet generating on the target surface during hipib irradiation, the instantaneous deposition rate is as high as imm / s and the uniform deposition area covered 40 - 50 cm2

    實驗結果表明，利用hipib燒蝕等離子體在si基體上可以實現快速、大面積、均勻地沉積類金剛石薄膜，薄膜的瞬時沉積速率達到1mm s ，均勻薄膜的面積達到40 ? 50cm ~ 2 。
  14. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films, owing to its high deposition rate and good uniformity etc. ito films were prepared by rf and dc magnetron sputtering in pure argon gas atmosphere, using in2o3 and in target mixed with sno2 ( 10wt % ) and sn ( 7wt % ) respectively

    其中磁控濺射工藝具有沉積速率高均勻性好等優點而成為一種廣泛應用的成膜方法。本研究課題分別以氧化銦錫靶和銦錫合金靶為靶材，採用射頻磁控濺射和直流反應磁控濺射工藝在氬氣氣氛中沉積ito薄膜。靶材中sno _ 2和sn的摻雜重量比例分別為10和7 。
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