deposition temperature 中文意思是什麼

deposition temperature 解釋
熱離解溫度
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. That is the premise of the bg / ha electrophoresis codeposition. the laws of the electrophoresis deposition of the bg and ha partic les were found by the study on each of their deposition under the different conditions. the electrophoresis codeposition of the bg and ha particles had been studied and the bg / ha graded coating, which is compact in the bottom layer and porous near the surface layer, had been prepared on the surface of the dental implant after the low temperature heat treatment ( about 740 ) and fast firing ( 50 - 80 / min, heat preservation time was 5 - 8min. )

    以bg微粉和ha微粉作為塗層原料，通過研究bg和ha微粉在非水介質中的分散情況和帶電特性，選擇冰醋酸為介質，使分散在其中的bg顆粒和ha顆粒表面均帶上正電荷，為電泳共沉積提供前提條件；通過對不同條件下bg 、 ha各自電泳沉積的研究，探索出了兩者電泳沉積的規律；通過對bg和ha在冰醋酸中電泳共沉積以及后續低溫（ 740左右）快燒（ 50 ? 80 min ，保溫5 ? 8min ）熱處理的研究，在鈦合金牙根種植體基體上成功制備出了底層緻密而表層多孔的bg ha梯度塗層。
  2. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  3. Increase of oxidation temperature transforms more silicide, which was formed during deposition of hf, to silicate

    ，成為介於hfo 。薄膜和出襯底之間的界面層。
  4. A monte - carlo method has been developed for simulating the growth of epitaxy flims. the program was compiled using turbo basic language. the influence of growth rate and temperature on surface morphology was studied. the model we used was an advanced diffusion limited aggregation ( dla ) model. the process of deposition and diffusion were considered in this model

    本文利用montecarlo方法，結合薄膜生長理論，採用turbobasic語言編寫程序，對外延薄膜的生長過程進行了模擬。所用的模型為改進的擴散有限聚集模型（ dla ） ，研究了薄膜生長過程中沉積速率和襯底溫度對表面形貌的影響。
  5. The properties of thin films have been investigated with modern analysis technique, such as afm ( atom force microscopy ), sem ( scanning electron microscope ), xrd ( x - ray diffraction ) and rocking curve ( - scan ). and the properties of ybco thin film and its substrate and deposition temperature have been analysed, comparing with lao substrate ' s crystallization quality, ybco thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of lao substrate as revealed by xrd

    本文結合afm 、 sem研究ybco薄膜的表面形貌， xrd 、 fwhm分析薄膜的結晶情況，並結合成膜溫度和基片的質量進行一系列結構與性能的對比研究，發現laalo3 （ lao ）基片的質量對ybco薄膜的結構完整性有很大影響，不僅影響了薄膜的c軸取向性，而且影響了ybco的超導性能。
  6. The charac teristics of homogenization temperature and salinity data also reports that this high - salinity inclusions were not generated by aqueous fluid immiscibility or boiling in ore - forming processes, but generated directly from a water - saturated crystallizing magmatic melt and that the main mechanism of ore deposition is the mixing of magmatic fluid and underwater not boiling of hydrothermal solution

    均一溫度和鹽度特徵還表明，高鹽度包裹體不是由熱水溶液的不混溶作用或沸騰作用形成的，而是由巖漿熔體直接分離的鹵水形成的；沸騰作用對礦質沉澱的作用不大，而流體的混合作用是銀山礦床礦質沉澱的主要機制。
  7. After hrp deposition, majority of its initial activity was lost ; however, the left part which still remains the activity has the high resistance to denaturation environments like high temperature, long incubation time and organic solvent exposure

    研究發現，沉積后的hrp活性損失很大，但沉積后仍具有活性的部分酶在高溫、長時間和有機溶劑等環境下表現出了明顯好於游離hrp的催化穩定性。
  8. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  9. The effect mechanisms of temperature, acidity, concentration and velocity on the hydrolysis and deposition are also analysed. in order to evaluate the results of experiments and the quality of products, we also studied the performances such as color, dispersibility, lightfastness, particle sizes of some specifications pigments, and also constitute the method of measureing these performances

    為了驗證評價試驗結果，並根據用戶對產品的質量性能要求，對雲母珠光顏料的顏色、分散性、耐光性、粒度組成等項質量指標對產品應用性能的影響進行了研究，並制定了相應的產品質量檢驗測試方法。
  10. Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material

    研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。
  11. The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics

    用sims分析結合器件直流特性測試，比較了在不同條件下淀積的氮化硅對gaas硫鈍化表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍化效果的影響。
  12. The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature, and the crystalline v2o5 films can be obtained by deposition at > 300. these films showed excellent cathode and anodic electrochromic performance at different wavelength region

    而襯底溫度升高促進薄膜晶體顆粒長大、熔結，晶粒邊界消失，在較高襯底溫度（ 300 400 ） ，得到連續的結晶性能良好的v _ 2o _ 5薄膜。
  13. The main results are : grinding is favorable to improve surface smooth degree, while nitrided and slow deposition makes sic granules fine ; the width of coatings gap increased in order of grinding, nitrided and vacuum heat treatment, but gap defects in multilayer coatings could be removed by slow deposition ; temperature of maximum weight loss could be decrease to 600 by grinding, vacuum heat treatment or slow deposition, but it will increased to 800 after nitrided ; oxidation kinetics curves all varied with the coating modifications

    主要有：磨削改性有利於提高塗層表面平整度，氮化和慢沉積使塗層表面顆粒細化。塗層間隙寬度按磨削改性、高溫氮化、真空熱處理依次增大，而慢沉積可獲得無面缺陷的多層塗層。磨削改性、真空熱處理及慢沉積均使最大氧化失重溫度點提前至600 ，而高溫氮化則使最大失重點后移至800 。
  14. Deposition temperature and surface microstructures zro

    2薄膜結構及表面形貌的影響
  15. That is to say, in order to achieve transformation from nonmagnetic fcc phase structure to fct state with strong anti - ferromagnetism, a high post - deposition temperature ( about 260 c ) anneal must be performed

    也就是說，為了使其從非磁fcc相轉變為具有強反鐵磁的fct相結構，需要大約260的高溫退火才能實現。
  16. The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding

    主要之製程參數包括氣源中之氫氣含量、氫電漿前處理、基材偏壓、沉積溫度以及電漿導流板之施加。
  17. With mocvd film technology, film chemical composition is easier to control, deposition temperature lower, deposition speed higher, deposited film more compact, homogenous and flat. in this paper, firstly, the study of fgms, the study of cvd and mocvd, and the nucleation mechanism have been introduced. secondly, the fabracations of metal / metal and metal / ceramic fgms have been reported

    本文在介紹功能梯度材料的研究進展， cvd 、 mocvd技術的研究概況以及mo （ co ） _ 6 ， fe （ co ） _ 5的成膜機制和工藝條件之後，著重報道了利用mocvd技術制備陶瓷薄膜，金屬金屬和金屬陶瓷功能梯度材料。
  18. The effect of many factors on the growth of thin films is especially analyzed and generalized, such as surface topography, structure defect of substrate, deposition temperature, and so on

    特別對基底的表面形貌、結構缺陷、沉積溫度等因素對薄膜生長影響的蒙特卡羅方法模擬的研究進展進行了分析和歸納。
  19. It was found that the thin films and target were of similar composition. the optimal deposition temperature was 150 - 200 and the tcr of thin films were strongly influenced by the target temperature

    發現磁控濺射法可以沉積得到與靶材組分一致的錳銅薄膜，沉積的最佳溫度為150 200 』 c ，並且陰極靶的溫度對薄膜tcr有很大的影響。
  20. The results turned out that the crystal structure was changed by the variation of the deposition temperature and annealing time. the surface morphology was greatly influenced by the spray parameters which atomized the precursor droplet in different diameters and different intensities

    薄膜的表面形貌隨著噴霧參數的改變發生了較大的改變，噴霧參數的改變使是霧化液滴大小和液流密度隨之發生了一定改變。
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