diamond pressure 中文意思是什麼
diamond pressure
解釋
一粒金剛石所承受的壓力-
Presently, the nucleation and growth mechanism of diamond has n ' t been known completely. thermodynamically, the nucleation and growth of diamond at low temperature and low pressure is still considered as a paralogism
目前金剛石的熱力學成核及生長機理尚不完全清楚，金剛石在低溫低壓下的成核和生長，仍被認為是一種熱力學的「悖論」 。 -
The strength and wear resistance of diamond drill bits for petroleum exploitation will be increased considerably when cast tungsten carbide is applied and adheres to the substrate firmly with cast tungsten carbide of 80 - 200mesh as the skelton and copper alloy as the soldering material in a process of non - pressure immersion
石油鉆探行業用的金剛石鉆頭，用粒度為80 ? 200目的鑄造碳化鎢粉作骨架，採用無壓浸漬工藝，以銅合金作釬焊料，將鑄造碳化鎢與基體牢固結合，強度、耐磨性大大提高。 -
Analyzing the influence factors for the performance of diamond drill bit in hot pressure sintering process of intermediate - frequency furnace
淺析中頻熱壓燒結過程中影響金剛石鉆頭性能的因素 -
In this paper, a new method was presented that b - doped diamond was synthesized at high pressure and high temperature ( hthp ) using b - doped graphite intercalation compounds ( gics )
本論文提出了利用含硼石墨層間化合物（ gics ）高溫高壓（ hthp ）合成含硼金剛石的新工藝。 -
Diamond press machine, synthetic diamond and its products various pressure containers other produts sucker rods, various derricks, drilling tools, hydraulic jacks, water swivels, hydraulic breakout tools, hydraulic pumping units and so on
該廠的主要產品有：地質巖芯鉆機工程施工鉆機水文水井鉆機汽車鉆機鉆塔泥漿泵金剛石壓機人造金剛石及製品液動螺桿鉆泵井壁管和抽油桿以及一 -
During the vicomtes story she sat upright, looking from time to time at her beautiful, plump arm, which lay with its line changed by pressure on the table, then at her still lovelier bosom, on which she set straight her diamond necklace. several times she settled the folds of her gown and when the narrative made a sensation upon the audience, she glanced at anna pavlovna and at once assumed the expression she saw on the maid - of - honours face, then she relapsed again into her unvarying smile. after ellen the little princess too moved away from the tea - table
在講故事的當兒，她腰板挺直地坐著，時而瞧瞧輕松地擱在茶幾上的肥胖而美麗的手臂，時而瞧瞧更加美麗的胸脯，弄平掛在胸前的鉆石項鏈，她一連幾次弄平連衣裙的皺褶，當故事講到令人產生深刻印象的時候，她回過頭來看看安娜帕夫洛夫娜，立時現出和宮廷女官同樣的面部表情，隨后便安靜下來，臉上浮現出愉快的微笑。 -
The present results indicate that the diamond element always yields the highest heat transfer, followed by cube and waterdrop pin - fin. however, the pressure drop for the diamond pin is higher compared to the cube and waterdrop pin - fin. arrays with geometric parameters x / d = 2. 7 elements generally cause the greater heat transfer and pressure loss than those with x / d = 3. 3 and x / d = 4
研究結果表明：鉆石形擾流柱排換熱最強，方形次之，液滴形最弱，相應地鉆石形擾流柱排壓力損失也最大，方形次之，液滴形最弱；小間距（ x / d = 2 . 7 ）在換熱較強的同時壓力損失也高於其他兩種間距。 -
The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules
結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。 -
This paper deals with the synthesis of ultrafine diamond ( ufd ) under high pressure and high temperatures generated by negative oxygen balance explosive detonation. the mechanism of synthesis ultrafine diamond by detonation standpoint is presented
本文從理論和實驗兩個方面對利用負氧平衡炸藥爆轟產生的游離碳，在高溫、高壓下相變為納米金剛石（ ultrafinediamond簡稱ufd ）作了初步探索。 -
By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character
採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。 -
The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。 -
And the field emission measurement was carried out at a pressure of 10 - 4pa. diamond powders coated with sliver are deposited on ito glass using electrophoresis coating method, through a solution of powders in isopropyl alcohol
利用葡萄糖的還原性將銀鹽中的銀還原出來，在超聲的條件下，還原出的銀將包覆在分散於溶液中的金剛石顆粒上。 -
Abstract : the forced state in key parts and their lifetime, the volume of high pressure chamber and ratio of pressure, the length of high pressure stroke and pressure stability, the relations between the deformation of high pressure chamber and temperature field and pressure field for three kinds of apparatus of making synthetic diamond under high pressure and high temperature were compared in this paper. the differences of these main apparatus were analyzed according to the degree of difficulty and ease in the technique, the choice of applicability and the cost and yield of them. it was emphasized that studying and developing the large sized belt - type press should be the way to make high quality saw diamond and change the state of making middle and low quality diamond in the diamond industry of our country, catching up with the international advanced level as well
文摘:通過對高溫高壓合成金剛石3種主要裝備在關鍵部件受力狀況與使用壽命、高壓腔體積與壓力利用率、高壓沖程大小與壓力穩定性，高壓腔變形與溫場、壓場的關系等方面的比較，分析了3種主要裝備在技術難易程度、適用性選擇和投入產出比的差異；強調了我國金剛石行業要改變當前只能生產中低檔金剛石的現狀，向生產高品級鋸片級金剛石的方向發展，與國際接軌，應該走大型化兩面頂的道路。 -
The forced state in key parts and their lifetime, the volume of high pressure chamber and ratio of pressure, the length of high pressure stroke and pressure stability, the relations between the deformation of high pressure chamber and temperature field and pressure field for three kinds of apparatus of making synthetic diamond under high pressure and high temperature were compared in this paper. the differences of these main apparatus were analyzed according to the degree of difficulty and ease in the technique, the choice of applicability and the cost and yield of them. it was emphasized that studying and developing the large sized belt - type press should be the way to make high quality saw diamond and change the state of making middle and low quality diamond in the diamond industry of our country, catching up with the international advanced level as well
通過對高溫高壓合成金剛石3種主要裝備在關鍵部件受力狀況與使用壽命、高壓腔體積與壓力利用率、高壓沖程大小與壓力穩定性，高壓腔變形與溫場、壓場的關系等方面的比較，分析了3種主要裝備在技術難易程度、適用性選擇和投入產出比的差異；強調了我國金剛石行業要改變當前只能生產中低檔金剛石的現狀，向生產高品級鋸片級金剛石的方向發展，與國際接軌，應該走大型化兩面頂的道路。 -
Thus following measures should be adopted : 1. increase the pack density of micron diamond power to improve the pressure transmitting between diamond granules and decrease the distance between them
提高金剛石微粉堆積密度以提高燒結時高壓傳遞的有效性和減小晶粒之間的距離； 2 -
When the third pretreatment method was adopted, microwave input power was 700w, gas pressure was 1000pa and substrate was tangent on plasma ball surface, diamond films showed higher nucleation density by contrast
經過對比採用方案基片處理方式，基片和等離子球處于相切位置時，在微波輸入功率700w和反應氣壓1000pa時沉積工藝參數時，基片成核密度較高。 -
Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system
該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。 -
Microwave plasma chemical vapor deposition ( mpcvd ), a kind of chemical vapor deposition method with low temperature ， low intensity of pressure and clearance ， is commonly used for the growth of diamond thin films
微波等離子體增強化學氣相沉積法（ mpcvd法）是眾多低氣壓下激活cvd工藝方法的一種，也是目前在國內外比較流行的制備金剛石薄膜的工藝方法之一。 -
The synthesis of boron - doped diamond at high pressure and high temperature
添加劑硼對純鐵粉末觸媒合成金剛石的影響 -
Laminar growth phenomena of graphite and quality of synthetic diamond in graphite - ni70 mn25 co5 system under high temperature and high pressure
5體系中石墨的層狀生長現象與合成金剛石的質量
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