diffused source 中文意思是什麼
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These experiments also showed a possible source of defects is a highly doped zn-diffused region in close proximity to the recombination region.
這些實驗還表明，緊接近復合區的高摻Zn的擴散區有可能是一個缺陷源。 -
Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample
發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。 -
These experiments also showed a possible source of defects is a highly doped zn - diffused region in close proximity to the recombination region
這些實驗還表明，緊接近復合區的高摻zn的擴散區有可能是一個缺陷源。
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