diffusion annealing 中文意思是什麼
diffusion annealing
解釋
擴散退火-
By sims method, we analyzed the profile distribution of mn and c, found that increasing the annealing temperature is beneficial to the diffusion of mn, but has no influence to c. mfm and squid measurements demonstrate that sub micron single - domain magnetic mnas particles found in sample annealing at 850 for 15s show ferromagnetism at room temperature and have a high curie temperature more than 300k
利用二次離子質譜方法對mn和c在樣品中的分佈進行了研究，發現退火溫度的上升，有利於mn的擴散；而對c的分佈影響較小。利用磁力顯微鏡和超導量子干涉儀對樣品的磁性質進行了研究。發現在850 + 15s退火處理的樣品中形成了亞微米級單疇磁性mnas粒子；經測試其在室溫下呈現出鐵磁性，居里溫度在300k以上。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion
本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。 -
Diffusion / oxidation furnace is a kind of very important equipment which is used in semiconductor process production line. it is applied in the manufacture process of the discrete semiconductor devices and integrated circuit which have diffusion, oxidation, annealing and alloying processing. it is also used in special temperature treatment of other material and is an auto - equipment which has the command of long time working, high precision and high stability
擴散/氧化爐是半導體工藝生產線上非常重要的一種工藝設備，用於分立半導體器件、集成電路製造過程中各種擴散、氧化、退火及合金工藝，也適用於對其他材料的特殊溫度處理，是一種要求能長時間連續工作、高精度、高穩定性的自動控制設備。
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