diode junction 中文意思是什麼
diode junction
解釋
連結式二極體-
Abrupt junction diode
突變結二極體 -
Alloy junction diode
合金結二極體 -
The heat - reaction characteristics of ni / si and tin / ni / si structure and the regularity for forming the nisi film have been studied deeply and formed the excellent ni - salicide shallow junction diode
文中對ni si和tin ni si的熱反應特性以及nisi薄膜的形成規律進行了詳細的研究。制備了優質的ni硅化物淺結二極體。 -
This paper analyses the numerical simulation problems of the semiconductor devices deeply. a one dimensional pn junction diode is worked out satisfyingly by the recursive method with the matlab5. 3 software
論文深入的分析了半導體器件的數值模擬問題，利用matlab5 . 3等計算機工具，用解三對角矩陣方程的遞歸演算法，實現了pn結二極體的一維求解，取得了比較滿意的結果。 -
Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes
肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。 -
Unfortunately, though the lifetime control technology reduces the stored charge, it increases the forward voltage drop ( vr ) and the reverse leakage current ( i, ). therefore, si pin diode cannot realize a good trade - off in qs - vf - i, -. the appearance of sige material and sige / si hetero - junction technology has changed this situation
但少子壽命控制技術在減少存貯電賀q _ s的同時，也增大了正向通態壓降v _ f ，和反向漏電流i _ r ，因此很難實現qs - v _ f - i _ r三者良好的折衷關系。 -
A lcc multi - resonant ( mr ) network is added to the traditional three - level converters to realize zvs. the unique arrangement of a multi - resonant network results in absorption of all major parasitic components hi the resonant circuit, such as transistor output capacitance, diode junction capacitance and transformer leakage inductance, which can eliminate parasitic oscillation in the converter
它的優點在於諧振電容吸收了開關管和續流二極體的結電容，諧振電感吸收了變壓器的漏感，使得開關管和續流二極體都能在軟開關的條件下完成導通和關斷過程，消除了電路中的寄生振蕩。 -
On the base of the study on sige material physics characteristic, sige / si hetero - junction characteristic, we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region, and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface
本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。 -
On the base of the study on si / sige hetero - junction fast switching power diode, two kinds of novel structure of sige / si pin diode are proposed in abstract this paper. the one is the gradual changing doping concentration in the n - region, and the other is sige pin diode with mesa structure
本文在對sige si異質結快速開關功率二極體的研究基礎上，提出了兩種sige si快速開關功率二極體的新結構： ?基區漸變摻雜型sige異質結開關功率二極體和臺面結構sige異質結開關功率二極體。 -
This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages, and then through using radio frequency bipolar junction transistor, designed a lc voltage controlled oscillator which was emulated by advance design system. in addition, it also implemented the design and debugged the hardware circuit
本文第一次實驗採用視頻信號直接控制vco諧振迴路變容二極體的方式實現頻率調制，並且利用射頻雙極性晶體管（ bjt ）設計了一種lc壓控振蕩器，通過ads軟體進行了參數模擬，最後進行了硬體電路的製作和調試。
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