diode voltage 中文意思是什麼

diode voltage 解釋
二極體順向電壓
  • diode : n. 【無線電】二極體。
  • voltage : n. 【電學】電壓,電壓量,伏特數。 the working voltage (電氣的)耐壓限度。
  1. Abd low voltage surge protective devices - specifications for avalanche breakdown diode

    低壓電涌保護裝置.雪崩擊穿二極體
  2. Abd components for low - voltage surge protection devices - part 321 : specifications for avalanche breakdown diode

    低壓浪涌保護裝置元件.第321部分:雪崩擊穿二極體
  3. Abd. components for low - voltage surge protective devices - part 321 : specifications for avalanche breackdown diode

    低壓電涌保護裝置元件.第321部分:雪崩擊穿二極體規范
  4. Taking the silicon diode as an example, through an analysis of the diode ' s current - voltage characters and the avometer circuit, the writer finds out the reasons for the differences in the amount when measuring the positive direct current equivalent resistance with different ohm grades

    摘要以硅二極體為例,從二極體的伏安特性及萬用表內部電路的角度,分析了用指針式萬用表的不同歐姆檔位測量二極體的正向直流等效電阻時,其值緣何不同。
  5. The experimental results show : the flattop phenomenon on the diode voltage pulse was very apparent for using the carbon fiber cathode, that is to say, the pulse duration of the diode voltage was widened ; moreover, under the condition of the same power of microwave, the pulse duration of the out - put microwave was prolonged by about 30 % ; the peak power of the microwave was enhanced by 3db

    通過在裝置上做的兩種陰極的對比實驗,結果顯示:碳纖維陰極的使用,改善了電子束質量,使輻射微波的脈寬增加了30 %以上,輻射主瓣方向上的功率密度提高了3db以上,頻譜分佈較純凈,實現了微波的高效輸出。
  6. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件,與普通的pn結二極體相比,它具有正向導通電壓低,響應速度快等優良特性。
  7. With the stringent requirement of low output voltage and high output current, semiconductor diode is necessarily replaced by synchronous rectifier to minimum voltage drop. because the existed driving schemes can not drive srs properly, two novel driving schemes for synchronous rectifiers in magnetic amplifier post regulating circuit are proposed in this paper

    已有的同步整流管驅動電路主要面對多路輸出的主輸出電路,而應用磁放大器調節的輔助輸出電路同步整流管的驅動,現有的方法存在磁放大器調節與同步整流管驅動的失配,降低了開關電源的效率。
  8. At normal operating voltage, the tvs diode is inactive, like an open circuit

    雪崩崩潰二極體是以反向電流的方式,連接在線路上。
  9. Using the particle - in - cell ( pic ) model, a 8 millimeter relativistic backward wave oscillator underlying superradiance mechanism was gotten, the influence on both operation frequency and radiation efficiency of the guiding magnetic field, the diode voltage, the beam current and the beam radius as well as the corrugation structure were also presented

    採用pic方法,通過數值模擬優化設計了超輻射狀態下的8毫米相對論返波振蕩器,分析了引導磁場、二極體電壓、電子束流、電子束半徑、周期慢波結構等對器件的輻射功率及輻射效率的影響。
  10. Conventional hard switching technology has several flaws below : on and off loss, inductive off, capacitive on and diode recover problems. comparing with it, the loss of on and off decreases markedly, as the switches are on and off in zero voltage or zero current cases. and also the size of converter becomes smaller because of the higher of switching frequency

    傳統硬開關技術由於存在開通關斷損耗大、感性關斷、容性開通、二極體反向恢復等問題,與之相比,軟開關技術在零電壓或零電流條件下導通,開關損耗明顯降低,加上開關頻率的提高使得變換器的體積得以減小,這也是軟開關技術受到青睞的原因。
  11. The conventional switching power supply usually use a diode rectifier followed by a bulk capacitor to convert ac voltage to dc voltage, resulting in the pulsating waveform of the input ac line current, low power factor ( generally 0. 65 ) and high harmonic line current

    傳統的開關電源設備通常採用二極體橋來進行整流和一個較大的電解電容來進行濾波以實現輸入電壓的交直流轉換,導致輸入電流為一個很窄的脈沖波並含有較多的諧波分量,功率因數變低(通常只有0 . 65 ) 。
  12. As the experiment results show, multiple reasons led to the offset of oscillating frequency, including diode ’ s nonlinear characteristic, fluctuation of electrical source voltage, traction of load impedance, change of environmental temperature and humidity and the design of circuit

    實驗結果表明多種因素引起了振蕩頻率的偏移,包括二極體的非線性、電源電壓的波動、負載的牽引、環境溫度濕度變化以及電路板設計方面的因素等。
  13. The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage

    結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。
  14. Unfortunately, though the lifetime control technology reduces the stored charge, it increases the forward voltage drop ( vr ) and the reverse leakage current ( i, ). therefore, si pin diode cannot realize a good trade - off in qs - vf - i, -. the appearance of sige material and sige / si hetero - junction technology has changed this situation

    但少子壽命控制技術在減少存貯電賀q _ s的同時,也增大了正向通態壓降v _ f ,和反向漏電流i _ r ,因此很難實現qs - v _ f - i _ r三者良好的折衷關系。
  15. The following is the main works and conclusions of this thesis. the novel upfc needs high power rate because it is generally used in high voltage transmission lines. after studied high - power converters and the literatures of upfc, the main circuit topology of novel upfc base on diode - clamping multilevel inverter is presented and the principle of using novel upfc to eliminate zero sequence and negative sequence currents is analyzed

    本文所做的主要工作及得出的主要結論如下:由於upfc一般用於高壓輸電線,其功率等級要求很高,在綜合研究大功率變換器和upfc現有文獻的基礎上,提出了基於二極體箝位多電平變換器的新型upfc的主電路拓撲,分析了用其來濾出高壓輸電線非全相運行時所產生的零序和負序電流的原理。
  16. Because, in our experiment, the beam current and the diode voltage are not their optimized values by the results of the particle simulation, the measured output microwave power is only 230mw

    由於實驗中束流電壓和電流都偏小,輸入的電子束功率水平低,特別束流大小比在粒子模擬中得到的優化電流低得較多,所以實驗測試到的微波功率只有230mw 。
  17. The results show that the output power decreases with the increase of the diode voltage in the range of 330 ~ 425kv. the input current exist a start value and also an optimum one. they are in the range of 20 ~ 25ka and 28 - 31ka, respectively

    結果表明,在33okv ~ 425kv范圍內,微波功率隨二極體電壓增大而減小; rtto存在起振電流和最佳電流,其值分別在20 ~ 25ka和28 ~ 3ika范圍。
  18. The simulation results show the existence of both limits and optima for the studied parameters, related to the stable operation and the maximum efficiency, respectively. underlying the conditions that the longitudinal guiding magnetic field is 1. 8t, diode voltage is 250 kv, the impedance is 150, we got a peak power as high as 100 mw for the tm01 mode at 38ghz

    經優化設計,本文給出了一個相對論亞納秒毫米波返波振蕩器的物理模型,在引導磁場為1 . 8t 、二極體電壓為250kv 、阻抗為150的情況下得到了超輻射狀態下輸出微波峰值功率為100mw 、中心頻率為38ghz 、模式為tm _ ( 01 )模的微波輻射。
  19. At the same time, in order to increase the gain of the radiation aperture, a new way to enlarge the waveguide radius is presented. and a gigawatt level of averaged output power with quasi - single tmoi mode is obtained at 3. 9ghz under the diode voltage of 550kv and the beam current of 23ka

    同時,為增大輻射口增益,提出了一種增大波導管半徑的方法,並且在二極體電壓為550kv 、束流為23ka的條件下,模擬獲得了平均功率達gw量級,頻率為3 . 9ghz的準tm _ ( 01 )模式的微波輸出。
  20. By varying the diode voltage and current, the relations among the microwave power, frequency and the diode voltage, current are obtained

    通過改變二極體工作電壓和電流,得到了微波功率、頻率等參數隨二極體電壓和電流的變化。
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