discrete transistor 中文意思是什麼
discrete transistor
解釋
分立晶體管- discrete : adj. 1. 分離的，分立的；顯然有別的。2. 不連續的；【數學】離散的；【哲學】抽象的 （opp. concrete）。adv. -ly
- transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
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Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes
半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范 -
Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes
半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范 -
Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes
半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范 -
Semiconductor discrete devices. detail specification for type 3da89 high - frequency power transistor
半導體分立器件. 3da89型高頻功率晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3da150 high frequency and power transistor
半導體分立器件. 3da150型高頻功率晶體管詳細規范 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146
半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor
半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor
半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor
半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor
半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor
半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes
半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes
半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes
半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete devices. detail specification for type bt51 npn silicon small power difference matched - pair transistor
半導體分立器件. bt51型npn硅小功率差分對晶體管詳細規范 -
Semiconductor discrete devices. detail specification for type 3dg216 npn silicon low - power difference matched - pair transistor
半導體分立器件. 3dg216型npn硅小功率差分對晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk40 power switching transistor
半導體分立器件. 3dk40型功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk39 power switching transistor
半導體分立器件. 3dk39型功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk312 power switching transistor
半導體分立器件. 3dk312型功率開關晶體管詳細規范 -
Semiconductor discrete devices. detail specification for type 3dk002 power switching transistor
半導體分立器件. 3dk002型功率開關晶體管詳細規范
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