doped single crystal 中文意思是什麼
doped single crystal
解釋
摻雜單晶-
Processing and growth mechanism of al - doped rutile single crystal by flame fusion method
單晶體焰熔法生長實驗及機理 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。 -
Therefore, it is desirable to investigate and enhance the mechanical property of silicon single crystal. in this paper, the fracture property of czochralshi ( cz ) and nitrogen - doped silicon ( ncz ) were investigated at room temperature by three - point bending method
尤其在當今隨著矽片直徑不斷增大的情況下，提高矽片的機械強度，減少矽片損傷、翹曲、位錯及其滑移等帶來的損失變得十分重要。 -
The synthesis of a single - crystal, ultra - long, uniform lead oxide nanowires were observed in a high vacuum chamber with the electron beam bombard in the tb doped pt thin films derived from sol - gel process
在高真空環境中用高能量電子束對pt t薄膜進行蒸發這種全新的方法，制備出直徑在6 60nxn之間、長徑比高達100的筆直pbo單晶納米線。
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