doping concentration 中文意思是什麼

doping concentration 解釋
摻雜濃度
  • doping : 半導體中的攙雜質
  • concentration : n. 1. 集中。2. 【化學】提濃，蒸濃，濃縮；濃度；稠密度；【礦物】汰選，選礦，富化。3. 集中注意，專心。
  1. On the base of these theory calculations, we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2. the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration. the majority of improvement in comes from the emitter surface passivation

    接著採用sio2作為鈍化膜，從實驗上比較了在不同表面濃度下單晶硅太陽電池的鈍化效果，結果表明在高表面濃度下其開路電壓比低表面濃度下的開路電壓低，這開路電壓的提高主要來源於降低了前表面復合。
  2. As the increasing of concentration, the host and guest interconverted, and the more the charge been transferred, the more the total energy decreased. finally, we deduce that the doping of rubrene in pvk just acting as traps in electroluminescent devices, and its trapping electrons arrested many cavities in pvk. and so, more pvk who did n ' t transport energy was concerned with trop and it makes less pvk was concerned with energy transfer in photoluminescent devices than in electroluminescent devices

    基於光致發光和電致發光中pvk與rubrene發光強度的不同，我們對低摻雜時的電致發光和光致發光進行了比較，並提出：在電致發光中， rubrene的摻入在pvk鏈間相當于陷阱，其陷阱電子對pvk空穴的吸引，使一部分在光致發光中不參與能量傳遞的pvk參與了這種陷阱作用，使得在電致發光中不參與能量傳遞的pvk可能比光致發光中少。
  3. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  4. In the second one, we firstly compared two kinds of solar cells in industry and analyzed their junction depth and doping concentration

    第二部分研究了p - n結及鋁背場對太陽電池特性的影響。
  5. It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

    通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。
  6. Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance. the formation theory of aluminum - alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed

    比較了兩種商業太陽電池的雜質濃度分佈及結深情況；敘述了鋁背場的作用及形成原理，對影響鋁背場表面濃度和結深的參數作了分析。
  7. Influence of fe doping concentration on some properties of semi - insulating inp

    摻鐵濃度對半絕緣磷化銦的一些性質的影響
  8. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  9. Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics

    基於此模型，提出在對正反向特性進行折衷時，如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。
  10. During this process, the level of doping concentration exceeds the density of cd vacancy in the crystal. in addition, the preparation of au contact on cd1 - xznxte wafers was studied. after further thermo - treatment, the stable ohm au contact was achieved

    此外，對于在cd _ （ 1 - x ） zn _ xte晶體上制備穩定歐姆接觸電極進行了相應的研究，制定出相應的蒸鍍及退火工藝。
  11. On the other hand, relationship between doping concentration, phase transition temperature, magnitude of resistance change and hysteresis width was investigated

    在此基礎上，本文進一步探討了摻雜濃度與vo _ 2薄膜相變溫度、電阻突變數量級以及熱滯寬度的關系。
  12. At the same time, we show that under a proper nitrogen doping concentration, due to the " concentration quenching " effect, the full spectrum of the nn3 center ( i. e., its zero phonon line and various phonon replicas ) is revealed without the interference from the spectra of other higher energy centers ( especially nn4 - nn6 )

    Gapi . xn :的發光譜在低組分下由尖銳的nn 。線及其聲子伴線組成，隨著組分x的提高，這些尖銳的的譜線逐漸展寬，並向低能端移動，在這個過程中，激子的能量傳輸起著重要作用
  13. On the base of the study on sige material physics characteristic, sige / si hetero - junction characteristic, we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region, and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface

    本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。
  14. On the base of the study on si / sige hetero - junction fast switching power diode, two kinds of novel structure of sige / si pin diode are proposed in abstract this paper. the one is the gradual changing doping concentration in the n - region, and the other is sige pin diode with mesa structure

    本文在對sige si異質結快速開關功率二極體的研究基礎上，提出了兩種sige si快速開關功率二極體的新結構： ?基區漸變摻雜型sige異質結開關功率二極體和臺面結構sige異質結開關功率二極體。
  15. The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance

    Soisingle - resurf效應研究。研究了soisingle - resurfldmos的器件參數對擊穿電壓和導通電阻的影響。
  16. Meanwhile, the influence of doping on oleds and the mechanism of doped oleds were investigated intensely. it is found that there exists a correspondent relation between doping concentration and luminescence phenomena

    摻入的染料由客發光體變成了主發光體，並存在從客發光體向主發光體的能量傳遞和電荷轉移。
  17. Firstly we analyze the requirement of sbd of high frequency for the doping concentration and thickness of the epilayer, for the structure parameter of the device. we design the optimum device parameter based on this. 2

    首先，從理論上分析出高頻肖特基二極體對材料的外延層厚度摻雜濃度的要求，以及其它的器件結構參數要求，以此為依據，設計出最佳的器件參數。
  18. The coupling between cr atoms in the system with two cr atoms considered is found to be ferromagnetic, and the magnetic moment per cr atom is similar to the case in which only one cr atom is considered in the same doping concentration

    在包含兩個cr原子的體系中cr原子之間是鐵磁性偶合，每個cr原子的磁矩與相同濃度下摻雜一個cr原子的磁矩相近。
  19. The heat - treatment temperature, the doping concentration of ag ( ag / si ) and drawing speed of the substrates can regulate the size, amount and distribution of silver nanaparticles in the matrix, and then influence the optical absorption of the samples

    結果表明，復合膜的處理溫度、銀的摻雜濃度和薄膜制備時的提拉速度都可使樣品的銀粒子的大小、數量和分佈產生變化，從而影響樣品的光吸收性能。
  20. Then we grew the material with different active layer growth temperature, different v / ratio, different doping concentration and form. after that, we tested these materials by photoluminescence ( pl ) technology, and got the best growth condition according to the results of photoluminescence spectra. our result was that the active layer growth temperature was 700, v / ratio was 60, waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm, p - type doping with dmzn from 90sccm to 490sccm )

    然後在不同的有源區生長溫度、 /比、摻雜方式及濃度情況下對激光器材料進行外延生長，並利用光熒光（ pl ）技術對不同生長條件下外延材料的光致發光特性進行了測試對比，結果表明在下列條件下生長出來的材料具有更好的光學和電學性能：有源區生長溫度在700 、波導層/比選擇為60 、 n型波導漸變摻雜190sccm - 590sccm的sih _ 4 、 p型波導漸變摻雜90sccm - 490sccm的dmzn 。
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