doping depth 中文意思是什麼
doping depth
解釋
摻雜深度-
In the second one, we firstly compared two kinds of solar cells in industry and analyzed their junction depth and doping concentration
第二部分研究了p - n結及鋁背場對太陽電池特性的影響。 -
It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established
通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。 -
Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance. the formation theory of aluminum - alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed
比較了兩種商業太陽電池的雜質濃度分佈及結深情況；敘述了鋁背場的作用及形成原理，對影響鋁背場表面濃度和結深的參數作了分析。 -
The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。 -
On this condition, based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique, the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated. through the optimization of simulating parameters, not only the cross - section and trap depth of the shallow electron trap induced by the dopant, but also the optimal doping amount is obtained
在此基礎上，以微波吸收介電譜檢測技術的實驗結果為依據，對摻有k _ 4fe （ cn ） _ 6的agcl立方體微晶在室溫下的曝光過程進行了模擬，通過調節模擬參數，不但計算出由摻雜劑引入的淺電子陷阱的俘獲截面和陷阱深度，而且得到了這種摻雜乳劑的最佳摻雜濃度。 -
Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics
基於此模型，提出在對正反向特性進行折衷時，如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。 -
The appropriate calcinations temperature is about 700, and the tetragonal sno2 phase crystal structure of the particles remained unchanged when sb was doped to it. as the calcinations temperature increasing and the calcinations time prolong, the size of particles grows and the crystallization tend to be complete. study on the electrical properties of ato powders prepared by hydrothermal synthesis was performed in - depth, the most optimal electrical properties are obtained at doping ratio of 11 percent
水熱法制備的ato納米粉體在熱處理溫度700左右較為適宜，銻的摻雜並未改變粉體的四方相金紅石結構，隨銻摻雜量的增加，粉體的粒度變小；隨熱處理溫度的升高和熱處理時間的延長， ato粉體的粒度增大，晶體結構趨于完整。
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