doping level 中文意思是什麼

doping level 解釋
摻雜級
  • doping : 半導體中的攙雜質
  • level : n 1 水平儀,水準儀;水準測量。2 水平線,水平面;水平狀態;平面,平地。3 水平,水準;水位;標準;...
  1. The difference between the magnetic moments for the samples with respective doping level can be ascribed to the variation of the competition between thermal effect and the magnetic coupling. based on the spin orientation rotation of dy sublattice as well as the antiferomagnetic coupling between dy sublattice and mn sublattice, we successfully elucidate the changes of magnetic structure in perovskite compounds s. electron spin resonance ( esr ) study on perovskite compounds on the basis of chapter 4, we give further study on micromagneticism of dy - doping perovskite compounds la0. 67 - xdyxsr0. 33mno3

    其中第一節簡單回顧了早期對a位雙稀土元素元素摻雜鈣鈦礦化合物的研究,早期研究較多的是替代元素的離子半徑變化上,由於替代離子半徑的改變,使a位平均半徑變ylll化,致使公差因子改變,使mn o長、鍵角變化,晶格效應的作用使化合物的磁性、電性、 cmr效應發生改變。
  2. During this process, the level of doping concentration exceeds the density of cd vacancy in the crystal. in addition, the preparation of au contact on cd1 - xznxte wafers was studied. after further thermo - treatment, the stable ohm au contact was achieved

    此外,對于在cd _ ( 1 - x ) zn _ xte晶體上制備穩定歐姆接觸電極進行了相應的研究,制定出相應的蒸鍍及退火工藝。
  3. The hydropilicity and photocatalysis of the samples were studied. the effects of the substrate temperature, carrier gas flux, o2 flux and n doping level on the microstructure, composition and properties of the films have been studied synthetically

    文章系統研究了基板溫度、載氣流量、 o _ 2流量和n摻雜量等工藝參數對tio _ 2薄膜微結構、組成和性能的影響。
  4. Also the hydrophilicity of the film increased with the doping level ' s rising

    薄膜親水性隨著n的摻雜量增加而升高。
  5. Therefore, it can be deduced that the doping level of the pani film increases with film thiekness during film growing process

    從而反映出聚苯胺膜的摻雜程度在膜生長過程中隨膜厚度的增長而增加。
  6. It is theoretically preferable that those tasked with ensuring a level playing field with respect to doping control should not be participating in the game

    負責確保競賽環境公平及藥物管制的人員,理論上不應參與診療工作。
  7. By analyzing the influence of iodide on photoelectron lifetime, the optimization iodide level and doping position that can increase photoelectron lifetime for agcl and agbr emulsion of different crystal structure is obtained

    通過對碘化物摻雜作為缺陷電子陷阱對光電子壽命影響的研究,對于不同晶體結構的鹵化銀乳劑得到了能使光電子壽命達到最大的優化摻雜條件。
  8. The doping level has a strong influence on the films " electrical properties

    F摻雜量對薄膜電性能有較大影響。
  9. When the doping level is low, the resistivity decreases with the doping level ' s rising and when the doping level is high, the resistivity increases with the doping level ' s rising

    在摻雜量較小時,薄膜電阻率隨著摻雜量的提高而減小,當摻雜量較大時,薄膜電阻率隨摻雜量的提高而增大。
  10. The oxidizing parameters of the anodization in the following experiments were preferred on the basis of measuring the dependence of pl properties ( peak position, and max intensity, etc. ) on anodization conditions, such as the anodizing current density, the time of the anodization, the concentration of the solution ( mainly of hf ), and on the doping level of the substrate

    刻蝕時間、刻蝕液配比及襯底電阻率對pl發光強度、峰值波長等性質的影響。在此基礎上優化出制備多孔硅的具體參數。對不摻sb與摻sb的snci 。
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