doping of semiconductor 中文意思是什麼

doping of semiconductor 解釋
半導體的摻雜
  1. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  2. Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960. the luminescence devices made with the materials had developed quickly. but the pure semiconductor materials could not better because the luminescence efficiencies were lower. doping is very important in order to improve the luminescence efficiency

    半導體發光材料和器件是六十年代發展起來的半導體技術中的一個分支，單一的純凈本徵半導體的性能往往不能滿足實際的需要，發光效率或發光幾率低，發光強度弱，提高發光效率的有效途徑就是進行材料的摻雜改性。
  3. Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content

    實驗結果表明:隨zr含量的增加， vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降，同時，隨摻雜量的增加， vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。
  4. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  5. The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films

    ，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。
  6. Controlled concentrations of specific donors or acceptors may be intentionally added into materials to form extrinsic semiconductor using various techniques. such an alloying process in semiconducting materials is termed doping

    控制特定施主和受主原子的濃度，進而運用各種方法能動地填加，這種在半導體材料中加入合金成分的過程稱為摻雜。
  7. There are many things can be used as electrorheological ( er ) materials, such as polymer semiconductor er materials, inorganic nonmetal materials et al. the advantage of polymer semiconductor er materials attributes to theirs high mechanical mass, lower density and fine hydrophobic properties, at the same time, theirs conductivity can be adjusted by doping and after - treatment, but theirs poor thermo - stability confines theirs extensive use

    有許多種材料都可以用作電流變材料，例如，聚合物半導體材料，無機非金屬材料等，聚合物半導體er材料的優點在於有較高的力學值、較小的密度、優良的疏水性，可以通過控制摻雜量和后處理程度有效控制電導的大小。
  8. In this paper, we analyze the doping experiments of several representational semiconductors and conclude the theoretical formula from different aspects. optimum doping contents in various materials of semiconductor materials are calculated. the quantitative calculation values are in accordance with the experimental results

    本論文工作是在對電子薄膜材料摻雜的研究基礎之上，主要是對幾種有代表性的半導體發光材料的摻雜進行分析，從不同角度對最佳摻雜含量的理論進行探索，並應用理論公式對發光材料最佳摻雜含量進行理論計算，使理論計算出的最佳摻雜含量與實驗數據相符合。
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