doping system 中文意思是什麼
doping system
解釋
摻雜系統-
Its oxygen - sensitivity is related to its oxidation and reduction process and non - stoichiometric ratio. in la _ 2nio _ 4 + system with excess oxygen, the conductivity is in proportion to o21 / 6. the effect of doping on a and b site have been studied in this paper
其本身的氧化還原過程和非化學計量是其氧敏性的根源，在氧過剩的la _ 2nio _ 4 +系統中載流子濃度與氧分壓的1 / 6次方成正比。 -
The doping of in of cdznte wafers was also achieved through annealing by adding in in the annealing sources. the specific parameters were established according to the thermodynamic principles of multi - component system. the properties of the wafers, including composition distribution, optical and electronical properties, were tested before and after annealing
將退火與摻雜過程結合起來，根據多組分熱力學原理制定了退火摻雜的工藝參數，對比研究了摻雜退火前後成分分佈、 in摻入量、紅外透過率以及電阻率的變化情況。 -
The thesis mainly investigated the bati _ 4o _ 9 ( bt _ 4 ), which has the lowest dielectric loss in ba - ti system, and ( ba, sr ) tio _ 3, the a position substitute compound of batio _ 3. the dielectric properties of bt _ 4 / bst with different preparation way and different elements doping were investigated. a archimedes method, xrd, sem, impedance analyzer, network analyzer and hakki - coleman method were used to investigate the density, phase formation, microstructure, dielectric properties and doping mechanisms
本論文以在ba - ti系中具有最低介電損耗的bati _ 4o _ 9 （ bt _ 4 ）高頻介質陶瓷和batio _ 3a位sr取代而得的（ ba ， sr ） tio _ 3 （ bst ）高頻介質陶瓷作為研究對象，對不同粉體制備方法制備的bt _ 4 / bst高頻電介質材料進行不同元素的摻雜，運用阿基米德方法， x射線衍射分析儀，掃描電子顯微鏡和阻抗分析儀，網路分析儀， hakki - coleman法等方法手段和測試儀器測試燒成樣品的密度，相組成情況，微觀結構和介電性能，探討造成介電性能起伏的形成機理。 -
The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter
使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。 -
The coupling between cr atoms in the system with two cr atoms considered is found to be ferromagnetic, and the magnetic moment per cr atom is similar to the case in which only one cr atom is considered in the same doping concentration
在包含兩個cr原子的體系中cr原子之間是鐵磁性偶合，每個cr原子的磁矩與相同濃度下摻雜一個cr原子的磁矩相近。 -
In this dissertation polyaniline conjugated conducting polymer with different structural texture and properties is prepared, using ( nhu ) 2s3oa / llci solution system. the molecular structure of undoped polyaniline is characterized. polyaniline with different conductivity can be gotten by changing the type of dopant and doping condition
再採用（ nh _ 4 ） _ 2s _ 3o _ 8 hci溶液體系制備出不同性能的聚苯胺導電聚合物，對不同的鹽酸濃度、不同氧化劑與苯胺的摩爾比、不同的溫度下合成的聚苯胺進行了性能上的比較，並對本徵態聚苯胺的結構進行了表徵。 -
Plasma doping system
等離子體摻雜系統 -
Laser doping system
雷射摻雜系統 -
Finally, the author brings out some suggestion and designs some versa doping system
最後，進行了一些反興奮劑工作的制度設計，以期為有關部門提供參考和決策依據。 -
The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe
首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
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