drift power 中文意思是什麼
drift power
解釋
漂移功率-
The function of desert microbiotic crusts in erdos was analyzed, the results ahowed that : microbiotic crusts consist of fine sand and thick powder sand, but differs with the wind - drift sand, wind - drift sand are coarse sand and fine sand ; microbiotic crusts influence the rainfall distribution again and effect on the evaporation of infiltration moisture ; microbiotic crusts has the power of water conservation and the function of enrichment of nutrients
摘要本文對鄂爾多斯沙漠生物結皮作用進行了初步研究，結果表明結皮層的機械組成以細沙和粗粉沙為主，而流沙以粗沙和細沙為主；生物結皮層影響降水的再分配作用，並影響入滲水的蒸發規律；生物結皮層縣有較好的保水特性和養分富集作用。 -
The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future
首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。 -
The detecting accuracy of the beam drift would be improved, as a high performance acoustooptic modulator modulates the frequency of the laser beam drift signal far away from the power frequency, the double power frequency and high frequency noises
具體包括: 1 .利用聲光調制器將光束漂移量信號調制到遠離工頻及其倍頻干擾和高頻噪聲的頻帶段，以期提高光束漂移量的檢測精度。 -
Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields
Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。 -
Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity
Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。 -
As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes
碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。 -
Tn order to eliminatc the error caused hylight power drift of incident light, we adopt the method of the ration of scattering light to measure the concentration of protein in milk. that is to measure 90 " scattering light intensity and 0 " transmitting light intensity in the light incident plane. the ratio of them is to be used to express measured optical parameter
由於牛乳蛋白質的測量精度要求很高，為了消除因入射光的光功率漂移而引起的誤差，我們採用散透比法來測量牛乳蛋白質的含量，即在光的入射平面內同時90處的散射光光強is和測量0處的透射光光強it ，用它們的比值來表徵測試牛乳蛋白質含量的光學參量。 -
Design of power supply of conveyance system of main drift in tucheng mine
土城煤礦主平硐運輸系統供電設計 -
High voltage drift drain mosfets ( dddmos ) are nowadays widely applied in circuits of power management, i / o interface, lcd drivers and etc. however, up to now a lack of a standard and accurate dddmos current model still brings much trouble in the circuit design
近年來，高壓雙擴散漏器件dddmos （ driftdrainmosfet ）以其優良的性能被廣泛地應用於電源管理、輸入輸出介面、 lcd驅動等電路中。然而，目前在業界缺少標準和準確的dddmos電流模型，給電路設計者帶來困難。 -
It has been reported that industrial pollution in chiwan of shekou, which is close to the new territories, has been serious in recent years. moreover, the dark smoke dust emitted from the power stations, refuse incineration plants and factories there may drift to the new territories with the wind and affect the health of local residents
據報，鄰近新界的蛇口赤灣，近年工業污染嚴重，當地的發電廠、垃圾焚化爐及工廠排放的黑煙粉塵，更會順著風勢飄至新界地區，影響當地居民健康。 -
Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。 -
Both ip - iq approach and id - iq approach need low pass filters, as a result the accuracy of harmonic current detection is influenced by frequency drift. moreover, they both can only be used in three - phase power systems
I _ p - i _ q法和i _ d - i _ q法都需要低通濾波器，因而會使諧波電流檢測精度受到電源頻率漂移的影響，而且這兩種方法僅適用於三相電力系統。 -
Comb finger accelerometers are one kind of typical mems products and have several advantages that make them very attractive for numerous applications. they have high sensitivity, good dc response and noise performance, low drift, low temperature sensitivity, low power dissipation, and a simple structure
叉指式微加速度計是一種典型的微機電系統產品，由於它的高靈敏度、好的直流響應、低噪聲、低漂移、對溫度的敏感性低、低能耗、結構簡單的優點，使其有著廣泛的應用前景，也是目前國內外攻關的熱點之一。
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