drift resistance 中文意思是什麼

drift resistance 解釋
流散電阻
  • drift : n 1 漂亮；（潮流的）推進力。2 漂流物；吹積物；堆積物；【地質學；地理學】冰磧，漂礫。3 傾向，趨勢...
  • resistance : n. 1. 抵抗，反抗，抗拒，抵禦；敵對，抵抗力，反抗力，阻力，【生物學】抗病性。2. 【電學】電阻；阻抗；電阻器。
  1. They include the ship kelvin wave pattern and wave resistance, the interaction of surface waves with floating bodies, the seakeeping of ships high - speed vessels and offshore platforms, the evaluation of the drift forces and other nonlinear wave effects responsible for the slow - drift responses of compliant offshore platforms and their mooring systems designed for hydrocarbon recovery from large water depths

    這包含了船波和波的阻抗、波和浮體的交互作用、高速行駛船舶與近岸結構物之耐海性、拖曳力評估及其他造成順應式近岸結構物緩慢飄移現象的非線性效應，與結構物設計于深海中以重獲碳氫化合物之錨定系統。
  2. The models currently used are either modified from low voltage mos models or based on macro model of simple polynomial established dddmos drift region resistance, both of which are limited and cannot provide a globally accurate physical model

    業界目前使用的模型只是在低壓mos模型基礎上作一些修改，或者通過用簡單多項式的形式建立dddmos漂移區電阻的宏模型以建模。
  3. In the model of on - resistance, we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region. then we provide the explicit dependence between on - resistance and doping distribution parameter

    導通電阻模型考慮了ldmos的溝道橫向雜質分佈和漂移區雜質縱向分佈的結構特點，給出了導通電阻與雜質分佈參數的明確函數關系。
  4. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  5. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  6. The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer

    模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。
  7. The accurate calculation of the input voltage and the compensation for the dc - offset error and the variation of the stator resistance are important factors in practical implementation of the integration since they can cause a drift in the stator flux linkage trajectory and furthermore deteriorate the quality of torque control

    因此，輸入電壓的準確計算、直流漂移量的補償以及定子電阻變化的補償都是影響積分計算準確性的重要因素，這些誤差會導致定子磁鏈軌跡的偏移，進而降低系統轉矩控制的性能。
  8. Firstly, the temperature varies in a large range in the place where the gap sensor works, so this paper analyzes the temperature drift of gap sensor, and finds out that the main reasons which result in temperature drift are the resistance of detecting coil and demodulating circuit parameters. to resolve this problem, a practical design of detecting coil is given, and a compensative measure considering the detecting coil and demodulation circuit is proposed to improve the temperature stability of gap sensor

    首先，針對間隙傳感器工作環境溫度變化較大的情況，本文對間隙傳感器溫度漂移現象進行了分析，認為檢測線圈電阻和檢波電路參數變化是造成傳感器溫漂的主要原因，建立了檢測線圈的數學模型，提出了檢測線圈和檢波電路綜合補償方法，解決了間隙傳感器的輸出信號溫度穩定性的問題。
  9. The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensor needs to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other

    壓力傳感器的零點存在熱漂移、電漂移和時間漂移，減小壓力傳感器的熱零點漂移的措施是各力敏電阻的電阻值及其溫度系數的相等性。
  10. The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensors requires to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other

    壓力傳感器的零點存在熱漂移、電漂移和時間漂移，減小壓力傳感器的熱零點漂移的措施是各力敏電阻的電阻值及其溫度系數的相等性。
  11. The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance

    Soisingle - resurf效應研究。研究了soisingle - resurfldmos的器件參數對擊穿電壓和導通電阻的影響。
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