drift velocity 中文意思是什麼
drift velocity
解釋
偏流速度-
The origins of dispersion error are analyzed ; effects of initial velocity dispersion, ballistic coefficient dispersion, drift coefficient dispersion, range wind & cross wind dispersion on the ballistic dispersion are discussed
分析了散布誤差的起源，討論了初速散布、射角散布、彈道系數散布、偏流散布、縱橫風散布對密集度的影響。 -
Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained. the number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically
考慮了各種彈性和非彈性碰撞過程，在純氧氣、純氮氣中，給出了不同簡化場e n條件下的電子漂移速度和平均電子能量的變化；著重分析了激發、電離、分解及分解電離碰撞的粒子數隨e n 、電子能量的變化，同時計算了激發發射光譜的波長。 -
Because of its special structure, the high velocity flow under the shield, big vortex and upcast flow behind the shield will affect the spray drift. if these situations could be changed, the drift can be reduced further
但由於該罩蓋的結構特點，其下方產生較大速度的運動氣流和罩蓋後部產生的渦流以及上旋氣流，將直接影響霧滴的飄失。 -
A slot was cut in the back plate of the double - foil shield to improve the flow field with air diversion method. the flow field and droplets trajectory near the shield are simulated in wind tunnel by fluent software to analyze the wake flow affecting the spray drift. from simulation, the improved shield spray in reducing drift is better than double - foil shield spray and conventional spray in six types of wind velocity
本文採用導流法在雙圓弧罩蓋上開口，利用fluent模擬分析和比較罩蓋噴霧流場，並模擬該流場下的霧滴運動軌跡來分析霧滴的飄失性，模擬結果表明：結構改進后的罩蓋噴霧流場得到改善，其減少霧滴飄失的效果好於原罩蓋，更優于常規無罩蓋噴霧。 -
In this thesis, three ionospheric scintillation monitors ( ism ) are installed in haikou, hainan province of the p. r. of china, which locations are separated about one hundred meters apart, the drift velocity of ionospheric irregularitie can be deduced by analyze the cross - correlation of scintillation signals at three monitors to determine the drift time between monitors
本文通過實驗的方法，在地面上相距百米左右的距離設置三臺電離層閃爍監測儀（ ism ） ，通過分析三站衛星閃爍信號之間的相關性，分別得出不規則體在三站連線方向上的速度，然後再求出電離層不規則體的漂移速度。 -
Investigation of plasma drift velocity vs time in intense electron beam diode
強流脈沖電子束二極體等離子體漂移速度的研究 -
Average drift velocity
平均漂移速度 -
The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage
結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。 -
Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields
Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。 -
Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity
Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。 -
As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes
碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。 -
As one of the several models to improve the drift - diffusion model, the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model
漂移擴散模型自上世紀五十年代初一出現，就得到了人們的廣泛關注。但隨著微電子技術的發展，它不能很好的解釋半導體中的有些現象，流體動力學模型就應運而生了。 -
By means of temporary stability of combining drift coefficient of angle sensor and through missile rotating two - position measurement, measuring rotating angle between the two positions by vertical sensitive axis x, and sensing the changes of ground velocity component between the two positions by horizontal sensitive axis and z, the position of the component is determined to realize the azimuth alignment before launch of tactical missile
角敏感元件漂移系數具有短期穩定性，通過轉彈前後兩位置對組合的測試，垂直敏感軸計測轉彈過程中兩位置之間的轉角，兩水平敏感軸敏感計測地速分量在前後兩位置的變化，由此計算出部件當前所在方位，從而實現戰術彈射前的方位對準。 -
And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail
並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。 -
We make up a simple model based on the microscopic mechanism of the membrane to investigate this phenomenon. the model proves reasonable after we quantify the velocity of the pearls drift slowly towards the laser trap
對於此動力學行為，本文從膜的微觀結構出發，建立了一個簡單的模型，解釋了珠鏈狀膜的形成以及光鑷熄滅后水珠的運動。 -
Several influence factors to result plasma drift in hainan were analyzed. in this paper the characteristics of ionospheric parameters variation were analyzed systematically and some new results in storm - time such as seasonal behaviors were obtained ; it is the first time to investigate the ionospheric drift behavior in hainan and some new results was obtained, the relationships between each two plasma drift velocity components in storm time in hainan were found and the electric filed variation in hainan ionosphere also was obtained ; the results also show that there are big differences of the ionosphere parameters bo and bl obtained from the data with that obtained from the iri - 2001 applied for hainan ; a new phenomena was found during a strong magnetic storm, that a layer with very strong electron density and density grad was found during the recovery phase of the storm, its horizontal scale is beyond 100km and temporal scale is about 2 hours, this phenomena repeated 3 times continuously. a type of negative disturbance in high and low latitude but positive disturbance in east - asia also has been found
本文較為系統地給出了海南地區電離層的參數變化特徵，特別是得到了一些暴時與以往不同的季節特性；第一次給出了海南地區的電離層等離子體漂移特徵，發現等離子體漂移暴時擾動在三個方向上有內在的聯系，得到了電場變化曲線；研究結果還表明海南電離層的半厚指數和形狀參數等與國際參考電離層iri - 2001存在很大差別；通過對強磁擾動事件期間的參數變化特性分析發現，在磁暴恢復相期間海南地區電離層底部存在一個電子密度非常大的高密度區，高密度區底部電子密度梯度隨高度急劇增加，該區域的水平尺度可達100公里以上時間尺度約為2小時，連續出現過三次，這是一個在海南從來未發現的新現象；研究還發現了暴時東亞地區電離層擾動會出現高低緯負相而中緯正相的現象。 -
Especially, the ionospheric electric field in hainan was studied according to the ionospheric plasma drift velocity by removing the neutral wind effect
特別是採用扣除中性風的方法，研究了海南地區電場的變化特性，並對海南地區的漂移變化因素進行了分析。 -
And the drift velocity and the average energy of electron in air are computed. the results obtained in this work will be of great importance to the research of discharges in atmosphere including dielectric barrier discharge at atmospheric pressure
通過模擬在大氣常溫下o _ 2 、 n _ 2及o _ 2 n _ 2的直流放電過程，所得結果對進一步了解大氣常溫下直流放電動力學的機理具有重要意義，對大氣常溫下介質阻擋放電研究也具有一定的參考價值。 -
Experimental constants include : ambient temperature 291k ~ 301k, rh 15 % ~ 21. 2 %, wind velocity 3. 2m / s at the nozzle position and horizontal to the spray fan, others are same as the fore experiment. the tendency of the two experiments results is consistent with the tendency from simulation. that indicate the improved shield spray is better than the original shield spray in reducing spray drift, and also more better than conventional spray without shield
風洞試驗參數：噴霧藥液為含1 bsf的水溶液，風速1 . 4m s ，風向垂直於噴霧扇面，溫度281k 288k ，相對濕度rh9 20 ；室內試驗參數：噴霧藥液為含2 bsf的水溶液，噴頭處風速為3 . 2m s ，風向平行於噴霧扇面，溫度291k 301k ，相對濕度rh15 21 . 2 ；分別在噴頭下風向噴幅外的空中和地面布點收集飄失和飄移沉積的霧滴量，作為評價減少霧滴飄失效果的指標：試驗結果表明：改進后的罩蓋噴霧減少霧滴飄失的效果好於雙圓弧未開口罩蓋噴霧，常規無罩蓋噴霧的霧滴飄失量大於開口罩蓋噴霧。 -
Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
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