ela 中文意思是什麼
ela
解釋
埃拉-
Television and entertainment licensing authority t ela
影視及娛樂事務管理處 -
Abstract : on the basic assumption of wencal, using pre - param eter method, the equation calculating multi - element beam of different section and ela sticity modulus on different groundsill are given in this paper. the programming language is qbasic. the results of example show that the calculation is correct and reasonable
文摘:依據文克爾基本假定，利用初參數法推導出不同地基及不同地基梁截面彈性模量的多單元彈性地基梁計算公式，並用已編制的qbasic語言計算程序，通過實例計算，結果正確、合理 -
Abstract : in this paper, the generalized variational principle of ela stic and plastic problem with finite displacement is derived by means of semi - in verse method
文摘:利用半反推法，導出了彈塑性有限變形率形式的廣義變分原理 -
I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v
對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v -
I have finished reading all articles of this registration form, and i would like to sign up to take the ela certification exam on ela supervisory / operational management level ela senior management level
我已閱讀本報名表格全部細則，並申請報名參加ela物流職業資格認證運營經理高級經理考試。 -
If i could only meet ela. my first love
要是讓我碰到伊麗撒，我的初戀 -
If i could only meet ela. my first love
要是讓我碰到伊麗撒，我的初戀 -
If i could meet ela.
假如我能遇上伊麗撒 -
If i could meet ela
假如我能遇上伊麗撒 -
Dr. ang. ela
安傑.洛醫生 -
Ela, the european logistics association, is a federation of 30 national organisations, covering almost every country in central and western europe
歐洲的資格認證對符合職業標準的人開放。這些標準由歐洲物流協會設定。 -
On the basis of metal induced crystallization ( mic ) and ela, we have proposed a new method of metal induced excimer laser annealing ( mi - ela )
在金屬誘導法制備多晶硅和激光晶化法制備多晶硅的基礎上，我們提出了一種新的多晶硅晶化法?金屬誘導下激光晶化法。 -
Little grains nisi2with the characteristics of crystal - lattice - match with c - si, can induce p - si under laser radiation. by xrd, it becomes clear that not only higher crystallization degree has been obtained comparing to ela and mic in the same conditions, but also p - si with selective crystal orientation has been achieved under proper conditions with this method
經xrd表徵，此方法比同條件下激光晶化法和金屬誘導法制備的多晶硅具有更高的晶化度，而且利用此方法在適當的條件下還能生長出具有優選晶向的多晶硅。
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