electrode contact 中文意思是什麼

electrode contact 解釋
電極接頭
  • electrode : n. 1. 電極。2. 電焊條。adj. -less 無電極的。
  • contact : n 1 接觸；聯系；交涉。2 〈美國〉（有勢力的）熟人；門路。3 【數學】相切；【電學】接觸；觸頭；觸點...
  1. The main work includes three contents as followings : 1, the situation of ohmic contact about al electrode, ti / al electrode on n - gan in different annealing conditions are investigated

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型gan在不同退火條件下的歐姆接觸情況，並用挖補圓盤法計算出接觸電阻率。
  2. Poly - o - toluidine ( pot ) is selected as the electro - catalyst of 2, 5 - dimercaptan - 1, 3, 4 - thiadiazole ( dmct ) because the solubility of pot in organic solvents is much higher than that of pan. therefore, dmct can contact with pot at molecular level. it suggests that the oxidative reaction order is 2 and the reduced reaction order is 1 by testing its electrode kinetics

    聚苯胺難以溶於有機溶劑，因此選用易溶於有機溶劑的聚苯胺衍生物聚鄰甲基苯胺（ pot ）作有機硫化合物2 ， 5 -二巰基- 1 ， 3 ， 4 -噻二唑（ dmct ）的電催化劑，兩者可以達到分子水平的復合。
  3. The intention of the paper is to study the deposition and properties of znte ( znte : cu ) polycrystalline thin films and to apply znte ( znte : cu ) as a complex back contact layer between cdte and metal electrode to obtain ohm contact and high efficiency cdte solar cells

    本論文目的在於研究znte （ znte ： cu ）多晶薄膜的制備和性質，並把znte znte ： cu多晶薄膜作為復合背接觸層應用於cdte和背金屬電極之間以獲得歐姆接觸和高效cdte太陽電池。
  4. The integral method is adopted caculate and analyze to amf three - dimension distruction which is the structure of coil type four - pole and the structure of coil type double - pole and study the size of two kind of electrode structure axial magnetic flux density distribution and its fielduniformity. the finite - element method is used simulate that eddy current has effect on amf when contact tray of douple - pole amf structure is slotted or no

    本文採用積分方法對本文設計的線圈式兩極縱向磁場觸頭結構和線圈式四級縱向磁場觸頭結構的縱向磁場三維分佈進行了計算分析。研究了電弧燃燒期間兩種觸頭結構縱向磁場強度的大小、均勻性，利用有限元法模擬線圈式兩極縱向磁場觸頭結構的觸頭盤開槽和不開槽時渦流對縱向磁場的影響。
  5. For the purposes to make cd1 - xznxte detector, ohmic contact materials of cd1 - xznxte crystal are selected and structure of electrode is designed. the processing of conducting film prepared by the magnetron sputtering is studied

    本研究主要開展了在cdznte晶體上歐姆接觸電極的設計選材和磁控濺射方法制備導電薄膜的工藝研究，為cdznte探測器的制備奠定工藝技術基礎。
  6. One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface, and the main technology usually used is evaporation, but the cohesion of evaporated film is n ' t very firm

    制備cdznte探測器最關鍵的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ （ 1 - x ） zn _ xte晶體表面制備接觸電極用導電薄膜，大都是採用蒸發鍍膜技術，膜層與cdznte晶體結合不很牢固。
  7. A novel method of electrostatic suspension was developed. this article briefly discusses the basic concept, schematic setup and optronic feedback system of the electrostatic suspension. when taking an aluminum plate and a compact disc ( cd ) as the suspended objects respectively, it is measured the electrostatic forces acting on the objects under different electrode voltages and different electrode - object gaps. the experimental results show that the electrostatic forces are sufficient to levitate both of the suspended objects, namely the electrostatic suspension method is practically feasible. compared to the conventional magnetic suspension, the significant characteristic of the electrostatic suspension is that it is capable of suspending most of the conductive and / or nonconductive, magnetic and / or nonmagnetic objects. therefore, this method can be widely applied to realize the electrostatic suspension and non - contact manipulation of the precision objects

    本文提出光電反饋式靜電懸浮的新方法，簡要討論靜電懸浮的原理、裝置及其光電反饋控制過程.採用鋁片和cd光盤作為懸浮體，測定了不同靜電電壓和不同懸浮間距時的靜電懸浮力，揭示了它們之間的相互關系.結果顯示這兩種懸浮體均可獲得足夠的靜電懸浮力，證明了靜電懸浮的可行性.靜電懸浮方法的顯著特點是既適用於導電體與非導電體的懸浮，又適用於磁性體與非磁性體的懸浮，克服了傳統磁懸浮技術僅適用於磁性體的局限性，可廣泛應用於精密元器件的懸浮與非接觸無損操作
  8. Current density doubles when the area of effective contact between tissue and electrode is halved, provided that hf current remains contant

    如果高頻電流強度保持不變，那麼人體組織和電極之間的有效接觸面積減半將會使電流密度增大一倍，這將產生四倍的熱量。
  9. Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis. we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics

    硅化物主要是由沉積過微溯博士裕文搏要程中hf和出的互擴散引起的，而熱氧化可以將其轉化成具有較高介電常數的硅氧化物hfxsiyo 。
  10. If you were to leave a grounded cable stationary in an energized high - frequency electrode for a while, you would notice that the insulation is noticeably warmer where it made contact with the corona field

    如果我們將一根接地電纜穩定放在施以高頻電極電壓的電極中一會兒?你將注意到與電暈有接觸的絕緣部分有明顯的變熱。
  11. The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions. by using xrd sims analytic methods and i - v measuremnet, we analysed the interface between metals and gan, and suggested that it is effect to decrease the value of the ohmic contact

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型si基gan和al _ 2o _ 3基gan在不同退火條件下的歐姆接觸情況，並用x射線衍射譜（ xrd ） ，二次離子質譜（ sims ）對界面固相反應進行了分析。
  12. Non - contact measurement on internal taper thread of electrode

    電極圓錐內螺紋的非接觸測量
  13. This results in a fourfold increase of heat ( correspondingly, heat drops by 75 % if current density is reduced by half, e. g. by doubling the effective electrode contact area

    相應地，如果將有效的電極接觸面積加大一倍，電流密度將減少一半，熱量則減少75 % 。
  14. B ) a set of device fabrication technology was developed to realize zno sbd. obvious rectifying characteristic was obtained using pt as schottky contact electrode with zno

    B ）探索適合zno肖特基二極體的製作工藝，選用pt作肖特基電極研製肖特基二極體原型器件。
  15. Contact electrode process for sodium

    密接電極煉鈉法
  16. Contact electrode process

    密接電極煉鈉法
  17. According to the different contact design, the distribution of axial magnetic field is different. the direction of the amf for single - pole contact is the same within the whole inter - electrode gap, and it changes for the multiple - pole contact

    根據觸頭設計的不同，縱向磁場的分佈也不同，對于單極觸頭縱向磁場的方向在整個電極間隙中都是相同的，對于多極觸頭縱向磁場的方向則是變化的。
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