electron band 中文意思是什麼

electron band 解釋
電子頻譜帶
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. Design of the electron gun for s - band high power twt

    波段大功率行波管電子槍設計
  2. In this thesis, a new finite difference time domain ( fdtd ) method is developed to treat a two - dimensional photonic crystal consisting of nearly - free - electron metals. the method is used to calculate the band structures and investigate defect modes and guide modes in such a photonic crystal

    本論文首先發展了一種基於等離子模型的有限差分計算方法，並應用於二維金屬光子晶體，有效地計算了該類光子晶體的能帶結構。
  3. The photocatalytic activities of the xw11 / tio2 ( x = p, si, ge ) composite films were tested via degradation of aqueous azo - dyes, congo red ( cr ) and naphthol blue black ( nbb ). it was observed that the photocatalytic activities of the three composite films are much higher than that of the pure tio2 film, mainly attributed to the synergetic effect between xw11 and tio2, i. e., xw11 - catalyzed electron transfer from the conduction band ( cb ) of photoexicited tio2 to itself

    結果表明三種復合膜均具有遠高於純tio _ 2膜的活性，主要歸因於復合膜材料中多金屬氧酸鹽和tio _ 2之間存在的協同效應，即作為強電子受體的多金屬氧酸鹽接受tio _ 2受光激發形成的導帶光生電子，延長了空穴-電子的再復合時間，同時自身仍具有光活性。
  4. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  5. Then the c - band simple milo is simulated systematically. the physics of electron bunching and microwave field growing is investigated in detail

    然後，對c波段milo模型進行了數值模擬，研究了其中電子聚束和微波產生的物理過程。
  6. A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente

    電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。
  7. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  8. Design considerations of the high power s - band rka are described, by using electron beams of voltage - 600kv, current - 5000a, and the numerical simulations for three kinds of the rka output structures are given. the three kinds of the output strctures are single - gap standing - wave ( sw ) cavity, traveling - wave ( tw ) output structure, and two output structures ( single - gap + traveling - wave structure ). under conditions of using two output structures, the results show that the instantaneous peak power obtained from sw output cavity and tw output structure is respectively 2. 4gw and 2. 1gw, the both power average of 0. 96gw and 0. 93gw, i. e. the s - band rka of two output structures generates peak output power of 1. 89gw at a frequency of 2. 85ghz

    從數值模擬中得到雙輸出結構的微波功率輸出結果為:駐波輸出的瞬時功率為2 . 4gw （周期平均為0 . 96gw ） ;行波輸出結構輸出瞬時功率為2 . 1gw （周期平均0 . 93gw ） ，就獲得了頻率為2 . 85ghz的微波輸出。本文簡要的描述了電磁軟體（ magic ）對速調管輸出腔體進行了模擬，並對相應的模擬方法進行了評述。
  9. Based on the energy band characteristics of ordinary negative electron affinity emitter gaas, the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented, and the special negative electron affinity emitter gaas was designed

    摘要根據通常負電子親和勢二次電子發射材料砷化鎵的能級特點，提出延長負電子親和勢二次電子發射材料砷化鎵的逸出深度的理論設計，設計出了特殊的負電子親和勢二次電子發射材料砷化鎵。
  10. This dissertation is mainly about the transit radiation of the electron beam passing through the gap with the random standing wave electric field. in order to satisfy the requirement of the task, the feasibility of generation of more than 1 gw high power microwave in x - band using the transit radiation oscillator based on the transit effect is studied

    研究了二維柱坐標系網格劃分演算法，並用此演算法對五腔開放腔進行網格劃分，採用時域有限差分與快速傅里葉變換相結合的方法計算了五腔開放腔/ 6 、 2 / 6 、 3 / 6 、 4 / 6 、 5 / 6模這五個模式的頻率和場分佈。
  11. Excited with 228nm, the emission bands centered at about 365nm and 460nm originate from the electron transitions of 1d2 - 1s0 and 3d - 1s0 in ag + respectively, and the emission band at 400nm results from the surface plasma resonance of the silver nanoparticles, which aggregated near the surface of the films

    在228nm光激發下，復合膜中ag ~ +的電子的~ 1d _ 2 ~ 1s _ 0躍遷和~ 3d ~ 1s _ 0躍遷分別在365和460nm附近發光，聚集在復合膜表面的納米銀粒子的表面等離激元共振導致了400nm附近的發光。
  12. 3. polycrystalline lif thin films were grown by thermal evaporation on amorphous substrates. properties of broad band photo - luminescence at room temperature of active channel ( f2 and fa + ) produced by electron beam irradiation were studied

    首次用熱蒸發法在玻璃襯底上制備了多晶lif薄膜平面波導，研究了由電子束照射產生的有源（ f _ 2和f _ 3 ~ +色心）溝道的室溫寬帶光致發光特性。
  13. A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation

    本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。
  14. If an electron with k state is initially in one miniband, elastic scattering will make the difference of the probability band occupation tend to zero. if electrons initially are located at a single wannier state, elastic scattering will make the difference of the probability band occupation tend to a constant which does not equal zero. the stable distribution in k space is just the same as the average distribution when no scattering

    發現彈性散射會破壞電子間的關聯，使得初始處在某一微帶上的態電子在兩微帶上的佔有幾率趨於一致；初始電子處在實空間的單個瓦尼爾態上時，最後在彈性散射的影響下兩帶佔有幾率差不為零，並且在上的穩定分佈和沒有散射時的平均分佈相同。
  15. In this thesis, we detailedly investigate the effect of elastic scattering on the electron dynamics and the current response in the two - band superlattice

    本文採用雙帶緊束縛模型，詳細地研究了彈性散射機制對超晶格中的電子動力學行為及電流響應的影響。
  16. 2. in this paper, the continuity of the wavefunction and of its derivative divided by the band - mass can be satisfied and the number of the terms is small when calculating the energies of the single electron in a square quantum wire with finite barriers, then this wavefunction can also be selected as the envelope function in studying the impurity states and the excitons in the square quantum wires with finite barriers

    2 .由於本文所取波函數滿足波函數的連續性條件和粒子流的守恆條件，並且計算有限深方形量子線中單電子的能量時需要展開的項數較少，故此波函數也可選為有限深方形量子線中雜質態、激子等問題的包絡函數。
  17. In 1985, takeshi kodama et al. [ 12 ] expressed the wavefunction as the combination of the function of the single electron in a one - dimensional square well with the finite barrier to calculate the binding energies of the exciton. this form does n ' t satisfy the continuity of the function and of its derivative divided by the band - mass

    1985年， takeshikodama等人在計算激子的束縛能時把單電子的波函數（ x ， y ）取為一維有限深方形量子阱中波函數的乘積，這種取法在邊界上不滿足波函數的連續性條件及粒子流（ 1 / m ~ * ） ' （ x ， y ）的守恆條件。
  18. Topics covered include crystal structure and band theory, density functional theory, a survey of properties of metals and semiconductors, quantum hall effect, phonons, electron phonon interaction and superconductivity

    內容包括了晶體結構和能帶理論，密度泛函理論，金屬和半導體特性概論，量子霍爾效應，聲子，電子-聲子的相互作用以及超導電性。
  19. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  20. We discuss the qcse of the impurity in the finite square qwws considering impurity position, and raise a point of the qcse under the influence of the masses mismatch and the aspect ratio of the quantum well wires. without considersion of the mismatch of the effective masses between the well and barrier, we obtain the conclusion as follows : ( l ) the first band energy of the electron is decreased under the electric field

    在前人工作的基礎上，我們在有效質量近似下討論了外加電場下有限深方形gaas ga _ （ 0 . 63 ） al _ （ 0 . 37 ） as量子阱線的雜質態和雜質的stark能移，並把我們的結果與前人的結果進行了比較。
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