electron binding 中文意思是什麼

electron binding 解釋
電子鍵聯
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子(學)說。
  • binding : adj 1 縛[捆、綁]…的;黏合的;系連的,連結的。2 有束縛力的,有拘束力的,附有義務的。3 〈口語〉引起...
  1. Waxes for electron wafer binding : waxes for electron wafer binding, mainly used in precision process of micro electron wafer ( u piece, s piece or smd piece ), excellent strong adhesive ability, no scathe to element, cleanup easily after process

    電子晶片粘接蠟系列:主要用於微電子矽片或石英晶片( u片、 s片或smd片)的精密加工,具有極強的附著力,對元件無任何損傷,使用后易去除。
  2. The electrochemical study showed that the interaction mode is mainly intercalative binding in ph 7. 4 phosphate buffer solution. the uv - vis spectroscopic study further demonstrated the above results. through the electrochemical parameters such as charge transfer coefficient and standard electron transfer rate constant ks in the absence and presence dna, it was found that the reaction of aloe - emodin with dna forms an electrochemical active supramolecular complex

    本文對姜黃素的研究結果表明,在0 . 1m磷酸鹽緩沖液( ph3 . 0 )中,姜黃素于玻碳電極上存在可逆的單電子轉移過程,據此,本文建立了以差示脈沖伏安掃描法檢測姜黃素含量的新方法。
  3. Standard practice for calibration of the electron binding - energy scale of an x - ray photoelectron spectrometer

    X -射線光電分光儀的電子結合能刻度表校準的標準實施規程
  4. Polyparaphenylenevinylene ( ppv ) has been paid attention to because of good photoelectric property and peculiar molecule framework ; fullenene have three - dimensional conjugated structure and diminutive electron binding energy, and its peculiar structure and property has interested photoelectric scientist. as an electronic acceptor, c60 can enhance the efficiency of organic photoelectric cells compounded with ppv. but the little solubility of c60 in common organic solvent limited its application, and processing measure need more researchment

    聚對苯乙撐( ppv )具有優良的光電性能和特有的分子構架而倍受關注, c _ ( 60 )具有三維共軛結構完美的對稱性和小的電子結合能,以其獨特的結構和性能引起了光電科學工作者的極大興趣,將c _ ( 60 )作為電子受體與共軛聚合物ppv復合可以使有機光伏電池的效率提高。
  5. In 1985, takeshi kodama et al. [ 12 ] expressed the wavefunction as the combination of the function of the single electron in a one - dimensional square well with the finite barrier to calculate the binding energies of the exciton. this form does n ' t satisfy the continuity of the function and of its derivative divided by the band - mass

    1985年, takeshikodama等人在計算激子的束縛能時把單電子的波函數( x , y )取為一維有限深方形量子阱中波函數的乘積,這種取法在邊界上不滿足波函數的連續性條件及粒子流( 1 / m ~ * ) ' ( x , y )的守恆條件。
  6. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵,通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析,提出了基於層生長模式的緻密化過程理論,解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成: ( 1 )在1150下, cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積,以8f型? sic為主,同時還會有少量4h型? sic ,無游離si和游離c存在; ( 2 ) pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成; ( 3 )熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面, pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
  7. Xps shows that the crystal has elements w, k, yb, o, gd from the data of electron energy level and binding energy

    因此,若想生長質量優良的晶體,應盡量減少生長過程中的溫度、濃度及生長速度的波動,保持晶體的穩態生長。
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