electron drift 中文意思是什麼
electron drift
解釋
電子漂移-
Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained. the number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically
考慮了各種彈性和非彈性碰撞過程，在純氧氣、純氮氣中，給出了不同簡化場e n條件下的電子漂移速度和平均電子能量的變化；著重分析了激發、電離、分解及分解電離碰撞的粒子數隨e n 、電子能量的變化，同時計算了激發發射光譜的波長。 -
In theoretical analysis, the motion of radially - emitted electron beam in diode region and drift region has been analyzed, and the relation between radial momentum or current of electron beam and the guiding magnetic field has also been studied, then the possibility to optimize the guiding magnetic field has been derived. the motion of radially - emitted beam electrons in smooth bore magnetron and smooth bore milo has also been studied theoretically. at last, the motion of radially - emitted beam electrons in compound axial and azimuthal magnetic field has been studied
在理論分析中，初步分析了軸向發射條件下電子在二極體區域和漂移區的運動規律，電子徑向動量隨著外加磁場變化的規律，以及電子束電流隨著外加磁場的變化規律，還有二極體區域磁場優化的可能性;分別研究了有軸向磁場時以及有角向磁場時徑向發射的電子在光滑陽極結構中的運動規律，最後分析了在軸向和角向復合磁場中電子的運動規律。 -
In addition to pic method, the numerical computation method is used as a compensation for the study of the characteristics of electron beam. the two methods are used separately to attain the trajectory of axially - emitted electron beam in diode region and drift region, and the trajectory of radially - emitted electron beam with axial, azimuthal, as well as compounded axial and azimuthal magnetic field. three two - dimensional codes and two three - dimensional codes have been made out to compute the trajectories
本文特點之一就是採用粒子模擬和數值計算相結合的方法進行模擬計算，分別得到了軸向發射條件下電子在二極體區域和漂移區的軌跡，徑向發射條件下電子在角向磁場、軸向磁場、角向和軸向復合磁場中電子的運動軌跡，分別編制了三個二維電子軌跡計算程序和兩個三維電子軌跡計算程序，最後將粒子模擬和數值計算得到的結果進行了對比，得到了較為滿意的結果。 -
Investigation of plasma drift velocity vs time in intense electron beam diode
強流脈沖電子束二極體等離子體漂移速度的研究 -
The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage
結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。 -
Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields
Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。 -
As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes
碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。 -
This product is a full electron construction in which its front - end adopts pressure sensor with baffle filled oil chip. output signal is sent the data to microprocessor from high - precision, low temperature drift and high - reliability amplification circuit and a d convert circuit, after operating, to transform by high - precision d a convert circuit into standard signal output
該產品為全電子結構，前端採用帶隔離膜充油芯體的壓力傳感器，輸出信號由高精度低溫漂和高可靠性的放大電路和模數轉換電路將數據送入微處理器，經運算後由高精度數模轉換電路變換為標準信號輸出。 -
And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail
並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。 -
The beijing electron position collider ( bepc ) and the beijing spectrometer ( bes ) are upgrading now. the drift chamber is a very important detector in bes
北京正負電子對撞機（ bepc ）和北京譜儀（ bes ）正在升級改造中，漂移室（ dc ）是北京譜儀上最重要的子探測器之一。 -
Several influence factors to result plasma drift in hainan were analyzed. in this paper the characteristics of ionospheric parameters variation were analyzed systematically and some new results in storm - time such as seasonal behaviors were obtained ; it is the first time to investigate the ionospheric drift behavior in hainan and some new results was obtained, the relationships between each two plasma drift velocity components in storm time in hainan were found and the electric filed variation in hainan ionosphere also was obtained ; the results also show that there are big differences of the ionosphere parameters bo and bl obtained from the data with that obtained from the iri - 2001 applied for hainan ; a new phenomena was found during a strong magnetic storm, that a layer with very strong electron density and density grad was found during the recovery phase of the storm, its horizontal scale is beyond 100km and temporal scale is about 2 hours, this phenomena repeated 3 times continuously. a type of negative disturbance in high and low latitude but positive disturbance in east - asia also has been found
本文較為系統地給出了海南地區電離層的參數變化特徵，特別是得到了一些暴時與以往不同的季節特性；第一次給出了海南地區的電離層等離子體漂移特徵，發現等離子體漂移暴時擾動在三個方向上有內在的聯系，得到了電場變化曲線；研究結果還表明海南電離層的半厚指數和形狀參數等與國際參考電離層iri - 2001存在很大差別；通過對強磁擾動事件期間的參數變化特性分析發現，在磁暴恢復相期間海南地區電離層底部存在一個電子密度非常大的高密度區，高密度區底部電子密度梯度隨高度急劇增加，該區域的水平尺度可達100公里以上時間尺度約為2小時，連續出現過三次，這是一個在海南從來未發現的新現象；研究還發現了暴時東亞地區電離層擾動會出現高低緯負相而中緯正相的現象。 -
And the drift velocity and the average energy of electron in air are computed. the results obtained in this work will be of great importance to the research of discharges in atmosphere including dielectric barrier discharge at atmospheric pressure
通過模擬在大氣常溫下o _ 2 、 n _ 2及o _ 2 n _ 2的直流放電過程，所得結果對進一步了解大氣常溫下直流放電動力學的機理具有重要意義，對大氣常溫下介質阻擋放電研究也具有一定的參考價值。 -
Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
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