electron hole recombination 中文意思是什麼

electron hole recombination 解釋
電子 空穴復合
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • hole : n 1 洞，穴，孔；（衣服等上的）破洞；傷口；漏洞；窩，坑；水流的深凹處，（河道的）緩流窪。2 （獸的...
  • recombination : 沖調；復水
  1. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  2. The initial activity of pt / tio2 was higher than that of tio2 because it restrained the recombination of electron and hole with supported pt, however the regenerated ability of the pt / tio2 was lower than that of tio2. after the regeneration, the activity could come back to some 60 % of the original activity and the reaction activity declined rapidly. the reason might be that after regeneration on the surface of pt / tio2 the incomplete oxidation of h2s to produce s was enhanced

    Pt tio _ 2催化劑的初活性比單一的tio _ 2催化劑的初活性高，這是因為擔載的貴金屬抑制了電子與空穴的復合，但其再生性能比tio _ 2差，再生后活性只能恢復到初活性的約60 ，且反應活性迅速降低，這可能由於在再生后的pt tio _ 2表面上， h _ 2s通過不完全氧化生成s ~ 0的反應增強所致。
  3. The photocatalytic action of layered nanocomposite semiconductor is based on the charge rapidly transferring from guest to guest or from guest to host layer to decrease electron - hole recombination, so as to improve photocatalytic activity. especially, this material can be recycled easily, and has potential applications in the area of environmental engineering

    層狀光催化納米復合材料是當前光催化材料科學研究領域中最活躍的研究方向之一，它是基於層狀化合物層間區域的納米空間結構，將半導體和貴金屬等客體引入其層間區域形成納米粒子，從而制得光催化納米復合材料。
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