electronic specific heat 中文意思是什麼

electronic specific heat 解釋
電子比熱
  • electronic : adj. 電子的，電子操縱的；用電子設備生產的；用電子設備完成的。adv. -cally
  • specific : adj 1 特殊的；特有的；特定的，專門的。2 明確的，具體的。3 【生物學】種的；【細菌】專性的。4 【醫...
  • heat : n 1 熱；熱力；熱度；熱量。2 體溫；發燒。3 （氣候的）高溫，暑氣。4 【冶金】熔煉的爐次；裝爐量；一...
  1. The measuring of low - temperature specific heat is an important and effective method to study the structure of electronic states, the atomic vibration of lattice, phase transition and structure of grain boundary

    低溫比熱測量是研究固體的電子能態結構、原子點陣振動狀態、相變、界面結構等信息的重要的且很有效的手段之一。
  2. The entropy or number of states of system or subsystem are closely related to interaction of particles and energy level distribution, therefore, to study the temperature dependence of the specific heat may supply some important and useful microscopic information which may play an important role in understanding electronic structure, density of state, phonon spectrum etc. the specific heat measurements at low temperatures also play important roles in the finding of the third law of thermodynamics, the quantum theory of solid and bcs theory for superconducting etc. moreover, specific heat measurements help us to understand the different kinds of phase transitions ( such as : structural phase transition, magnetic phase transition, superconducting phase transition etc. ) and the scaling behavior near the critical point

    系統、子系統的熵或微觀狀態數與微觀粒子間的相互作用及能級分佈密切相關，因此研究比熱與溫度的依賴關系能夠提供被測量系統許多極其有用的微觀信息，對理解固體的電子結構、電子態密度、聲子譜等起著十分重要的作用。低溫比熱的測量和研究對熱力學第三定律、固體量子理論和超導bcs等理論的建立起到了積極的推動作用。比熱研究還有助於認識各類相變如結構相變，磁性相變，超導相變等及臨界點附近的標度規律。
  3. After extended the formula of normal state specific heat to the superconducting state, we obtain its electronic specific heat of superconducting state

    擬合其正常態比熱，並把正常態的晶格比熱延伸到超導態后，在總比熱中減去，就得到mgb2在超導態的電子比熱。
  4. At the temperature far below tc, the electronic specific heat deviates the bcs - like pattern largely

    我們發現在遠小於tc的溫度，其電子比熱大大偏離bcs規律。
  5. We have measured the low - temperature specific heat of mgb2, and analyzed thoroughly its lattice and electronic contribution respectively

    本文測量了低溫下mgb2的比熱，並詳盡分析了mgb2的晶格比熱和電子比熱。
  6. B ) we have compared the specific heats of ambient and high pressure sintered mgb2. it shows that the leap of electronic specific heat ces of high pressure prepared sample at tc is smaller than that of ambient pressure prepared sample

    2 ）我們還對照研究了高壓合成的mgb2樣品比熱，發現tc處的電子比熱躍變ces比常壓制備的樣品小很多。
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