emitter power 中文意思是什麼
emitter power
解釋
發射極功率-
The research focus concentrates on the use of feas as a cold cathode source for microwave power amplifiers or flat panel displays. now silicon and molybdenum are the most popular materials used for tip field emitter arrays
針對目前場發射陣列陰極的研究情況，較為常用的是鉬微尖場發射陣列和硅微尖場發射陣列。 -
Using operation amplifier to control power of laser emitter
基於斬波自動穩零運算放大器的激光器平均光功率控制 -
In contrast with conventional thermo - ionic cathode, field emitter array ( fea ) cathode has many special advantages, such as room - temperature operation without a cathode heater, high current density, low power dissipation, excellent on / off isolation characteristics and instant turn - on characteristics
與傳統的熱陰極相比，場發射陣列陰極具有許多獨特的優點，如無需加熱，可以在室溫下工作;電流密度比熱陰極高幾個數量級，並可工作在低電壓調制下;功耗低;極好的開關特性;可瞬時啟動等。 -
The film resistance parallel - connected between the emitter and the base of power devices can
薄膜電阻的升阻比尺、 。 -
The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost
與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。
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