energy band 中文意思是什麼
energy band
解釋
能帶-
With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission
通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。 -
By observing the energy band of hard x - ray, people not only can expand a series of studies to celestial bodies or phenomena of nova and supernova ' s breaking out, nucleus ' s compose, but also many interactional process of thermal braking radiation, synchronal radiation
硬x射能區的天文觀測一方面可以研究一系列的天體目標或超新星和新星的爆發、核合成等現象，另一方面也可以研究一系列的相互作用的過程：熱韌致輻射、同步輻射等。 -
Consequently, the energy band structure and the densities of state were researched. secondly, vas - cdgeas2 and ge / as - cdgeas2 were upbuilded
用紅外光譜儀在中紅外區做吸收檢測，結果顯示晶體在中紅外區的吸收較低。 -
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors
現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。 -
Analysis on photocatalytic activity and surface energy band structure of ag, nd tio2 nanometer materials
2納米材料光催化活性及其表面能帶結構分析 -
Lastly, we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition, procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature
最後利用格林函數方法討論了光格子中超冷原子的能帶結構，根據mott相存在能隙的判據我們在平均場近似下重新得到superfluid - mott相變條件，該結論與相關文獻一致。 -
The energy band of hard x - ray, with strong penetrability, is an important astrophysical wave band
硬x射線能段是天體物理的重要波段，由於具有較強的穿透能力，因而它可以攜帶輻射區的很多信息。 -
Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。 -
Based on the energy band characteristics of ordinary negative electron affinity emitter gaas, the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented, and the special negative electron affinity emitter gaas was designed
摘要根據通常負電子親和勢二次電子發射材料砷化鎵的能級特點，提出延長負電子親和勢二次電子發射材料砷化鎵的逸出深度的理論設計，設計出了特殊的負電子親和勢二次電子發射材料砷化鎵。 -
University ' s class hour compared to a center school leadertime, her waist is very difficult to support the such long time, onlyin the energy band specially makes protects the waist maintenancesitting posture, the time one is long must rest a meeting, cancontinue to maintain the sitting posture
大學的課時比中學長一倍，她的腰部很難支撐這么長時間，只能帶上特製的護腰維持坐姿，時間一長必須休息一會，才能繼續保持坐姿。 -
The highest - energy band containing electrons is called the valence band, and the next higher one is the conduction band
填有電子而能量最高的能帶稱為價帶，相鄰的更高能帶稱為導帶。 -
After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate
運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。 -
The net charge of transition metal atom has decreased as a result of the static effect of lithium ion and effect of energy band of co and ni
由於鋰離子的靜電作用和鈷、鎳自身能帶結構的影響，過渡金屬的凈電荷減小。 -
By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism, the structure of the energy band and the crystal potential field
本文充分利用半導體的能帶理論，從薄膜晶體結構、能帶結構和晶體勢場的角度，分析載流子的遷移、散射以及載流子的產生和晶體結構缺陷對載流子的捕獲。 -
Topics covered include : crystal lattices, electronic energy band structures, phonon dispersion relatons, effective mass theorem, semiclassical equations of motion, and impurity states in semiconductors, band structure and transport properties of selected semiconductors, and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling
被覆蓋的論題包括：晶格、電子能帶結構、聲子色散關系、有效質量理論、半經典運動方程和半導體中的非純態、選擇性半導體的帶結構和輸運性質固體量子理論與準費米能級以及用於器件建模的玻爾茲曼輸運理論之間的聯系。 -
For the first time, the energy band configuration of p - si / n - bn heterojunctions were studied and drawn up. the study of the current - voltage ( i - v ) characteristics showed significant rectifying behavior with reverse saturation current of 3. 7 x 10 ~ 7a, breakdown voltage of 30v and turn on voltage of 14v. the capacity - voltage ( c - v ) characteristics are studied too
研究了p - si / n - bn異質結的-特性，測試表明異質結具有明顯的整流特性，反向飽和電流3 . 7x10 「 』 a ，擊穿電壓高達30v導通電壓為14v ，應用p七en異質結能帶圖對其卜v特性做出了定性解釋。 -
We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band
另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。 -
Due to the change in lattice constant and the distortion of energy band, strained si exhibits great mobility enhancement compared with the conventional si material, and it is the critical reason for the wide application of strained si mosfets
由於晶格常數的改變，應變硅中載流子的遷移率高於普通硅材料，這是應變硅mosfet性能提高的根本原因。 -
In experiments, the energy band structures of l - - d pc and 1 - - d pc sl are researched. we get the relation between the band gap width and the num - ber of the iayers, dielectric indices contrast, midgap wave - - length
在實驗工作中，研究了一維光子晶體的能帶結構，得到了帶隙寬度隨介質層數、介質折射率、中心波長變化的關系曲線。 -
Nanoparticles show significant quantum - size effect ( such as energy band discreteness, band gap broadening, blue shift in spectra etc. ) as sizes of particles are smaller than bohr radis of exciton of bulk material with same composition ( for example, cds ’ s bohr radium is 6nm )
當納米粒子的尺寸小於其塊狀材料的激子波爾半徑時（如cds的激子波爾半徑為6nm ） ，能夠表現出明顯的量子尺寸效應（如能帶離散，禁帶變寬，光譜藍移等） 。
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