energy gap 中文意思是什麼

energy gap 解釋
禁帶寬度
  • energy : n. 1. 干勁，活力。2. （語言、行為等的）生動。3. 〈pl. 〉 （個人的）精力；能力。4. 【物理學】能，能量。
  • gap : n 1 （墻壁、籬笆等的）裂口，裂縫；豁口，缺口。 【軍事】突破口。2 （意見的）齟齬，分歧；隔閡，距離...
  1. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  2. When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240, the atomic ratio s / sn of the films increases from 0. 72 to 1. 08 and energy gap of the films increases from 1. 44ev to 1. 48ev with the increasing of the sulphurisation temperature

    當硫化時間為30分鐘硫化溫度在240 ~ 310之間變化時，薄膜的s / sn值隨著硫化溫度的升高從1 . 08上升到1 . 96 ，能帶間隙隨著硫化溫度的升高從1 . 01ev上升到1 . 72ev 。
  3. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  4. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  5. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  6. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  7. In photodetectors the wavelength response is not uniform at all wavelengths, but a threshold energy exists, determined by the semiconductor energy gap between bound and free carriers.

    光子探測器對不同波長的分光響應是不同的，但是存在一個由束縛和自由載流子之間的半導體能隙所確定的能閾。
  8. In the chapter five, we study the quasi particle excitation energy spectrum and corresponding energy gap in ferromagnetic ( 1 / 2, 1 ) tow - leg heisenberg ladder system

    準一維磁性系統熱力學性質的研究摘要第五章中，我們研究了亞鐵磁雙鏈ow legheisenbergladder ）系統中的元激發譜和能隙。
  9. And then, zno thin films were synthesize on quartz and silicon substrates by sol - gel dip - coating and spin - coating. the properties of the films and the effects of growth parameters on the quality of zno films were studied using x - ray diffraction, optical absorption, photoluminescence techniques, etc. to modify the energy gap of the zno, mg2 + was added in the sol - gel solution, and mgxzn1 - xo films were prepared by the same method as that for zno films

    利用溶膠凝膠法成功地在石英玻璃和單晶矽片等襯底上制備出了c軸擇優取向的zno薄膜，並利用x射線衍射儀、紫外-可見光光譜儀、熒光光譜儀等對zno薄膜的結構和性能進行了測試、分析，並研究了熱處理參數等條件對zno薄膜性能的影響。
  10. Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x

    採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。
  11. Tio2 film is antibacterial through photocatalysis. the silver doped tio2 film baffle the separate of electron and cavity, change the energy gap ' s framework of tio2, and improve its activity performance of photocatalysis

    二氧化鈦薄膜是光催化抗菌，摻銀二浙江人學幀卜論義氧化鈦薄膜阻止光生電子一光生空穴的分離，改變了tioz的能帶結構，提高了它的光催化活性。
  12. This indicates the existence of the second energy gap

    這預示著第二個超導能隙的出現。
  13. With the prolongation of the annealing time at 400 " c and sokpa, the energy gap and the electrical resistivity increase and all the thin films trend to n - type semiconductors

    400 、 80kpa硫化時，薄膜均呈n型導電特性，而且隨著硫化時間的延長，薄膜禁帶寬度及電阻率增大。
  14. Sns has an energy gap of eg 1. 3ev, which is very close to the optimum energy gap 1. 5ev of solar cells, and it has a high absorption coefficient ( > 104cm - 1 ) and a high conversion efficiency of about 25 %. in addition, elements sn and s are abundant and non - toxic in nature

    硫化亞錫（ sns ）的禁帶寬度eg 1 . 3ev ，接近太陽能電池的最佳禁帶寬度1 . 5ev ，在理論上其能量轉換效率達到25 % ;其吸收系數? 104cm - 1 ，用作太陽能電池耗材少;其組成元素s和sn在地球上儲量豐富、廉價、無毒，有很好的環境兼容性。
  15. We put our emphases on four sections : the opening of the energy gap and its effects on the thermodynamic properties in low temperature, quantum fluctuation and the hidden long - distance order parameters, the magnetization and the specific heat properties under the extern magnetic field of the ferromagnetic chain, and the energy spectrum of the ferromagnetic ladder

    著重研究在一維量子自旋系統中的能隙的打開、以及能隙對系統熱力學性質的影響；量子漲落和系統隱含的序參量；亞鐵磁的在外場下的磁化性質以及比熱性質；和亞鐵磁雙鏈系統中的能譜。
  16. The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller. the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method. at the same time, it was observed that the smaller the dimension of the porous silicon, the broader energy gap of the porous silicon

    採用脈沖和直流電化學腐蝕兩種方法制備多孔硅，對這兩種方法制備的多孔硅樣品進行掃描電鏡和熒光光譜的測量，發現脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發光強度大，而且發光峰位有明顯的藍移現象。
  17. Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation. the influence of the thickness on the crystal structure, electrical resistivity, carrier concentration, absorption coefficient and energy gap of fes2 thin films have been investigated

    採用硫化不同厚度的fe膜制備了不同厚度的fes2薄膜的方法，研究了不同厚度fes2薄膜的晶體結構、電阻率、載流子濃度、光吸收系數以及禁帶寬度。
  18. With the introduction of the dopants, the effective mass of carriers was changed and the seebeck coefficient was increased. at the mean time, the dopants reduced the forbidden energy gap, which changed the carrier concentration and thus increased electrical conductivity. by calculating the forbidden energy gap and electrical conductivity of mg2si specimen doped with different amount sb, the mechanism of transference changed abruptly at 625k

    在mg _ 2si熱電材料基體中摻雜te 、 sb元素后，在結構中引入了缺陷，增大了體武漢理工大學博士學位論文系中載流子有效質量，提高了seebeck系數;降低了體系導電活化能，提高了電導率，同時也降低了熱導率。
  19. The method and some simple and important results are presented. in the second chapter, we study the ground state energy gap and the spin - peierls phase transition in the quasi one - dimensional spin = l / 2 dimerized anti - ferromagnetic single chain

    第二章中，我們研究準一維自旋s = 1 / 2的二聚化反鐵磁單鏈的基態能隙和低溫下的spin - peierls相變。
  20. We find it has the same behavior as that of the continuous phase transition in bcs super - conduction theory : the nonzero ground state energy gap decreases to zero at the finite critical temperature tsp, and the specific heat takes on divergence

    我們發現該相變同bcs理論的連續相變極為相似：基態非零的能隙在有限的臨界溫度t _ （ sp ）處降低為零，而比熱呈現出趨于無窮的發散。
分享友人
分享到 Line

分享到臉書